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IXYS Corporation IXTN21N100 MOSFET N-CH 1000V 21A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN21N100	Tube			10	1 - 10 $23.216 100 $23.216 1000 $23.216 10000 $23.216	Buy Now
IXYS Corporation IXTN21N100L 21 A, 1000 V, 0.55 OHM, N-CHANNEL, SI, POWER, MOSFET (Also Known As: IXTN21N100)
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Quest Components	IXTN21N100L		13			1 $21.45 10 $21.45 100 $21.45 1000 $21.45 10000 $21.45	Buy Now
	IXTN21N100L		13			1 $21.45 10 $21.45 100 $21.45 1000 $21.45 10000 $21.45	Buy Now

IXTN21N100 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTN21N100		IXYS	600V high voltage megaMOS FET		Original	PDF

IXTN21N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXTN21N100 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)21# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)520# Minimum Operating Temp (øC)-55õ	Original	IXTN21N100	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
IRF540 complementary Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3	Original	RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR	PDF
DIODE B44 sot Abstract: IXTK21 B44 diode IXTN21N100 Text: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V	OCR Scan	IXTK21 IXTN21N100 O-264 21N100 21N100 DIODE B44 sot B44 diode IXTN21N100	PDF
78737 Abstract: No abstract text available Text: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss	OCR Scan	IXTK21N100 IXTN21N100 O-264 OT-227 E153432 ab22b 00D4D0S 78737	PDF
IXTN79N20 Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi	OCR Scan	OT-227B npe06pa30Baienm flMana30H ot-55Â IXTN21N100 IXFN27N80 IXFN36N60 IXFN48N50 IXFN55N50 IXFN130N30 IXTN79N20 IXFN120N20 IXFN73N30 IXFN106N20 IXFN150N15	PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20	PDF
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel	PDF
ixfh26n60q Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY	OCR Scan	SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671	PDF
sot23 BS170 Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120	OCR Scan	BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100	PDF