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Littelfuse Inc IXTQ100N25P MOSFET N-CH 250V 100A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ100N25P	Tube	249		1	1 $8.13 10 $8.13 100 $6.81167 1000 $6.81167 10000 $6.81167	Buy Now
Littelfuse Inc IXFH100N25P MOSFET N-CH 250V 100A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH100N25P	Tube	179		1	1 $12.1 10 $12.1 100 $9.79133 1000 $8.35145 10000 $7.6603	Buy Now
Littelfuse Inc IXTT100N25P MOSFET N-CH 250V 100A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT100N25P	Tube			30	1 - 10 - 100 $9.93722 1000 $9.00565 10000 $9.00565	Buy Now
Littelfuse Inc IXTK100N25P MOSFET N-CH 250V 100A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTK100N25P	Tube			25	1 - 10 - 100 $10.2768 1000 $8.76562 10000 $8.76562	Buy Now
IXYS Corporation IXTT100N25P MOSFET 100 Amps 250V 0.027 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT100N25P					1 $13.31 10 $13.31 100 $10.77 1000 $8.6 10000 $8.6	Get Quote
TTI	IXTT100N25P	Tube			300	1 - 10 - 100 - 1000 $8.03 10000 $8.03	Buy Now
New Advantage Corporation	IXTT100N25P		24		1	1 - 10 - 100 $18.06 1000 $18.06 10000 $18.06	Buy Now

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100N25P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
100N25P Abstract: No abstract text available Text: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	100N25P O-247 100N25P
100N25P Abstract: 100N25 IXTK100N25P 50A8 Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	100N25P 100N25P 100N25 IXTK100N25P 50A8
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXTQ 100N25P IXTK 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	100N25P 100N25P
100N25P Abstract: No abstract text available Text: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	100N25P 100N25P
Untitled Abstract: No abstract text available Text: IXTQ 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ For Plasma Display Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30	Original	PDF	100N25P
100N25P Abstract: No abstract text available Text: IXFH 100N25P PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ ≤ 200 ns trr For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V	Original	PDF	100N25P O-247 100N25P
100N25 Abstract: No abstract text available Text: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	100N25P O-247 100N25
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	PDF	110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP