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    2SK615 Search Results

    2SK615 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK615 Panasonic TRANS MOSFET N-CH 80V 0.5A 3SC-71 Original PDF
    2SK615 Panasonic N-Channel MOS FET Original PDF
    2SK615 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK615 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK615 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK615 Unknown FET Data Book Scan PDF
    2SK615 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK615 Panasonic Silicon MOS FETs Scan PDF

    2SK615 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vth for mos 0,9

    Abstract: 2SK0615 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features 2.5±0.1 6.9±0.1 Drain to Source voltage 80 V 20 V ±0.5 A ID Max drain current Allowable power dissipation Channel temperature Storage temperature


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    PDF 2SK0615 2SK615) SC-71 vth for mos 0,9 2SK0615 2SK615 SC-71

    Untitled

    Abstract: No abstract text available
    Text: 2SK615 Silicon MOS FETs Small Signal 2SK615 Silicon N-Channel MOS Unit : mm For switching 6.9±0.1 ● Easy automatic- /manual-insertion due to M type package. Self-fix- 1.0 Direct drive possible with CMOS, TTL 0.85 ing to printed circuits board. 4.5±0.1


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    PDF 2SK615 500mA

    2SK61

    Abstract: 2SK0615 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as


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    PDF 2SK0615 2SK615) SC-71 2SK61 2SK0615 2SK615 SC-71

    2SK615

    Abstract: SC-71
    Text: Silicon MOS FETs Small Signal 2SK615 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 • Absolute Maximum Ratings (Ta = 25°C) * Symbol 0.55±0.1 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage


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    PDF 2SK615 SC-71 500mA 2SK615 SC-71

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as


    Original
    PDF 2SK0615 2SK615) SC-71

    2SK0615

    Abstract: 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching unit: mm • Features 6.9±0.1 * 1.0 0.85 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage VGSO 20 V Drain current ID ±0.5 A Max drain current IDP


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    PDF 2SK0615 2SK615) 2SK0615 2SK615 SC-71

    2SK0615

    Abstract: 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as


    Original
    PDF 2SK0615 2SK615) SC-71 2SK0615 2SK615 SC-71

    SSSMini3-F1 transistor

    Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
    Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)


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    PDF 2SK0601 2SK614) 2SK664) 2SK665) 2SK1228 2SK1374 2SK3539 2SK3546J 2SK3547 2SK2211 SSSMini3-F1 transistor 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614

    2SK582

    Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
    Text: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS


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    PDF 2SK578 2SK579 2SK580 2SK581 2SK582 10mfti 2SK809 2SK604 25dBtyp 100MHz 2SK582 2SK600 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


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    PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286

    2sk to-92

    Abstract: No abstract text available
    Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


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    PDF 2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92

    2SK620

    Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663


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    PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK620 3SK268 3SK269 3SK286 CAMERA MOS 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


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    PDF 2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123

    2SK2276

    Abstract: 2sk227
    Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40


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    PDF 2SK601 2SK614 2SK615 2SK620 2SK2276 2SK2277 2SK2342 2SK2474 2SK2495 A2SK2660 2SK2276 2sk227

    K614

    Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
    Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)


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    PDF 2SK662 2SK1103 2SJ163 2SK198 2SK374 2SK123 2SK1216 2SK1842 2SJ164 2SK301 K614 K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996