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    Panasonic Electronic Components ERG-2SJ163

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    DigiKey ERG-2SJ163 Bulk 588 6,000
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    Onlinecomponents.com ERG-2SJ163 4,470
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    Master Electronics ERG-2SJ163 3,470
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    Panasonic Electronic Components ERG-2SJ163A

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    Bristol Electronics ERG-2SJ163A 3,000
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    Panasonic Electronic Components ERG-2SJ163V

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    2SJ163 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ163 Panasonic Silicon P-Channel Junction FET Original PDF
    2SJ163 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SJ163 Panasonic P-Channel Junction FET Original PDF
    2SJ163 Unknown FET Data Book Scan PDF
    2SJ163 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ163 Panasonic Silicon MOS FETs Scan PDF
    2SJ163O Panasonic TRANS JFET P-CH 1mA 3TO-236 Original PDF
    2SJ163P Panasonic TRANS JFET P-CH 1.5mA 3TO-236 Original PDF
    2SJ163Q Panasonic TRANS JFET P-CH 3mA 3TO-236 Original PDF
    2SJ163R Panasonic TRANS JFET P-CH 6mA 3TO-236 Original PDF

    2SJ163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation


    Original     		PDF 2SK1103 2SJ163

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    2SJ163

    Abstract: 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current


    Original     		PDF 2SK1103 2SJ163 2SJ163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Unit Gate to Drain voltage VGDS −65 V Drain current ID 20 mA Gate current


    Original     		PDF 2SK1103 2SJ0163 2SJ163) O-236 SC-59

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    Junction-FET

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current


    Original     		PDF 2SK1103 2SJ163 Junction-FET 2SJ163 2SK1103

    VDSV

    Abstract: 2SJ163 2SK1103 mini 29
    Text: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20


    Original     		PDF 2SJ163 2SK1103 VDSV 2SJ163 2SK1103 mini 29

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: 2SJ163 Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching Complementary with 2SK1103 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID –20 mA Gate current IG –10


    Original     		PDF 2SJ163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 • Package ■ Features


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 O-236 SC-59

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation


    Original     		PDF 2SK1103 2SJ0163 2SJ163) 2SJ0163 2SJ163 2SK1103

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    Junction-FET

    Abstract: 2SJ0163 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 Junction-FET 2SJ0163 2SJ163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 SC-59

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package ■ Features • Code Mini3-G1 • Pin Name • Low ON resistance


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


    Original     		PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original     		PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


    OCR Scan     		PDF 2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


    OCR Scan     		PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107

    3SK192

    Abstract: 2SK651
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )


    OCR Scan     		PDF 2SK2380 2SJ0385 2SJ364 2SK662 2SK663 2SK1103 2SJ163 2SK198 2SK374 2SK123 3SK192 2SK651