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    2SK601 Search Results

    2SK601 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK601 Panasonic TRANS MOSFET N-CH 80V 0.5A 3MINIP3-F1 Original PDF
    2SK601 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK601 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK601 Panasonic N-Channel MOS FET Original PDF
    2SK601 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK601 Unknown FET Data Book Scan PDF
    2SK601 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK601 Panasonic Silicon MOS FETs Scan PDF

    2SK601 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK0601

    Abstract: 2SK601
    Text: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)


    Original     		PDF 2SK0601 2SK601) 2SK0601 2SK601

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04


    Original     		PDF 2002/95/EC) 2SK0601 2SK601)

    Untitled

    Abstract: No abstract text available
    Text: 2SK601 Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS Unit : mm For switching ● High-speed switching ● Direct drive possible with CMOS, TTL ● Downsizing of sets by mini-power type package and automatic inser- 45˚ +0.1 1.0–0.2 0.4±0.08


    Original     		PDF 2SK601 500mA

    2SK0601

    Abstract: 2SK601
    Text: Silicon MOS FETs Small Signal 2SK0601 (2SK601) Silicon N-Channel MOS FET For switching unit: mm • Features Ratings Unit 80 V +0.25 0.4max. 0.4±0.08 +0.1 1.0–0.2 Symbol 45˚ 4.0–0.20 2.6±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter 1.5±0.1


    Original     		PDF 2SK0601 2SK601) 2SK0601 2SK601

    2SK0601

    Abstract: 2SK601 MS2002
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0601 2SK601) 2SK0601 2SK601 MS2002

    2SK60

    Abstract: 2SK601
    Text: Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS FET For switching unit: mm 1.5±0.1 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings (Ta = 25°C) +0.25 45˚ 4.0–0.20 2.6±0.1 ● Low ON-resistance RDS(on) ● High-speed switching


    Original     		PDF 2SK601 500mA 2SK60 2SK601

    2SK601

    Abstract: 2SK0601 2SK60
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 2.5±0.1 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0601 2SK601) 2SK601 2SK0601 2SK60

    SSSMini3-F1 transistor

    Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
    Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)


    Original     		PDF 2SK0601 2SK614) 2SK664) 2SK665) 2SK1228 2SK1374 2SK3539 2SK3546J 2SK3547 2SK2211 SSSMini3-F1 transistor 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0601 2SK601)

    2SK0601

    Abstract: 2SK601
    Text: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 0.4 max. 2.6±0.1 Rating Unit Drain to source voltage VDS 80 V Gate to source voltage VGSO 20 V Drain current


    Original     		PDF 2SK0601 2SK601) 2SK0601 2SK601

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.5±0.1 VDS Gate-source voltage (Drain open) VGSO Drain current ID Peak drain current


    Original     		PDF 2002/95/EC) 2SK0601 2SK601)

    2sk to-92

    Abstract: No abstract text available
    Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92

    2SK582

    Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
    Text: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS


    OCR Scan     		PDF 2SK578 2SK579 2SK580 2SK581 2SK582 10mfti 2SK809 2SK604 25dBtyp 100MHz 2SK582 2SK600 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    2SK620

    Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK620 3SK268 3SK269 3SK286 CAMERA MOS 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


    OCR Scan     		PDF 2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123

    2SD1483

    Abstract: 2sb1208 2SK690 2SB807 2SD96
    Text: — 'y Mini Power Type 3-pin Package Outline Transistors 1 .5±0.1 U n i t ! mm >h 5 -/N "7 -iï(3 s s i)M ' y / r - v « , * « n ic i« « a, tin it t * « «t ^ ciêit ÿ n fc/jvaaw •y ^ / ' “ y *t - • ft v 'T \ S 7 > v X 2 4 '£ '( : : $ f8 £ ftT i'3 : T o


    OCR Scan     		PDF 2SD2359 2SA1737 UN7231 10/uA 25dBm 2SK601 2SK690 2SD1483 2sb1208 2SK690 2SB807 2SD96

    2SK2276

    Abstract: 2sk227
    Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 2SK2276 2SK2277 2SK2342 2SK2474 2SK2495 A2SK2660 2SK2276 2sk227

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    K614

    Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
    Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)


    OCR Scan     		PDF 2SK662 2SK1103 2SJ163 2SK198 2SK374 2SK123 2SK1216 2SK1842 2SJ164 2SK301 K614 K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996