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    2SK61 Price and Stock

    . 2SK613-3-T8

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK613-3-T8 2,485 7
    • 1 -
    • 10 $0.75
    • 100 $0.375
    • 1000 $0.15
    • 10000 $0.1125
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    Others 2SK613-3-T8

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK613-3-T8 1,988
    • 1 $1
    • 10 $1
    • 100 $0.3
    • 1000 $0.2
    • 10000 $0.2
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    NEC Electronics Group 2SK612 (KH)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK612 (KH) 293
    • 1 $3.2
    • 10 $3.2
    • 100 $1.6
    • 1000 $1.48
    • 10000 $1.48
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    Toshiba America Electronic Components 2SK610

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK610 179
    • 1 $9.288
    • 10 $9.288
    • 100 $5.7276
    • 1000 $5.1084
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    2SK61 Datasheets (62)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK61 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK61 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK61 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK61 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK61 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK61 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK61 Unknown Cross Reference Datasheet Scan PDF
    2SK61 Toshiba Japanese Transistor Data Book Scan PDF
    2SK610 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK610 Unknown FET Data Book Scan PDF
    2SK611 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK611 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK611 Unknown FET Data Book Scan PDF
    2SK611 NEC Scan PDF
    2SK611Z Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK611-Z Unknown FET Data Book Scan PDF
    2SK612 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK612 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK612 Unknown MOS Field Effect Power Transistors Scan PDF
    2SK612 Unknown FET Data Book Scan PDF

    2SK61 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL


    Original     		PDF 2SK0614 2SK614)

    2SK614

    Abstract: to-92 type
    Text: Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL +0.2 Symbol +0.2 0.45 –0.1


    Original     		PDF 2SK614 500mA 2SK614 to-92 type

    vth for mos 0,9

    Abstract: 2SK0615 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features 2.5±0.1 6.9±0.1 Drain to Source voltage 80 V 20 V ±0.5 A ID Max drain current Allowable power dissipation Channel temperature Storage temperature


    Original     		PDF 2SK0615 2SK615) SC-71 vth for mos 0,9 2SK0615 2SK615 SC-71

    Untitled

    Abstract: No abstract text available
    Text: 2SK615 Silicon MOS FETs Small Signal 2SK615 Silicon N-Channel MOS Unit : mm For switching 6.9±0.1 ● Easy automatic- /manual-insertion due to M type package. Self-fix- 1.0 Direct drive possible with CMOS, TTL 0.85 ing to printed circuits board. 4.5±0.1


    Original     		PDF 2SK615 500mA

    Untitled

    Abstract: No abstract text available
    Text: 2SK614 Silicon MOS FETs Small Signal 2SK614 Silicon N-Channel MOS Unit : mm For switching 4.0±0.2 5.1±0.2 5.0±0.2 Low ON-resistance RDS(on) ● High-speed switching ● Direct drive possible with CMOS, TTL +0.2 +0.2 0.45 –0.1 0.45 –0.1 • Absolute Maximum Ratings (Ta = 25˚C)


    Original     		PDF 2SK614 SC-43 500mA

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.1±0.2 For switching circuits 4.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 • Features 4.0±0.2 13.5±0.5 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ■ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    2SK61

    Abstract: 2SK0615 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as


    Original     		PDF 2SK0615 2SK615) SC-71 2SK61 2SK0615 2SK615 SC-71

    2SK615

    Abstract: SC-71
    Text: Silicon MOS FETs Small Signal 2SK615 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 • Absolute Maximum Ratings (Ta = 25°C) * Symbol 0.55±0.1 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage


    Original     		PDF 2SK615 SC-71 500mA 2SK615 SC-71

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOS FETs Small Signal 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm • Features 5.0±0.2 0.7±0.2 5.1±0.2 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL 4.0±0.2 12.9±0.5


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    SSSMini3-F1 transistor

    Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
    Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)


    Original     		PDF 2SK0601 2SK614) 2SK664) 2SK665) 2SK1228 2SK1374 2SK3539 2SK3546J 2SK3547 2SK2211 SSSMini3-F1 transistor 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as


    Original     		PDF 2SK0615 2SK615) SC-71

    2SK0614

    Abstract: 2SK614
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL 0.7±0.2 • Features 13.5±0.5


    Original     		PDF 2SK0614 2SK614) 2SK0614 2SK614

    2SK0615

    Abstract: 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching unit: mm • Features 6.9±0.1 * 1.0 0.85 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage VGSO 20 V Drain current ID ±0.5 A Max drain current IDP


    Original     		PDF 2SK0615 2SK615) 2SK0615 2SK615 SC-71

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 0.7±0.1 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open) VGSO 20 V 0.5 A 1.0 A 750 mW 150


    Original     		PDF 2SK0614 2SK614)

    2SK0615

    Abstract: 2SK615 SC-71
    Text: Silicon MOS FETs Small Signal 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as


    Original     		PDF 2SK0615 2SK615) SC-71 2SK0615 2SK615 SC-71

    k613

    Abstract: 2SK013 2SK613 2SK613-3 sony IT 243 sony m-100
    Text: Sony. 2SK613 Silicon N-Channel Junction FET U n it: mm P a cka g e O u tlin e D escrip tion M aking the best of Epitaxy and Pattern latest technology, 2 S K 6 13 accom plishes so far unattain­ able levels of performance. Usage with head am plifiers for video cam eras


    OCR Scan     		PDF 2SK613 2SK613 M-232 k613 2SK013 2SK613-3 sony IT 243 sony m-100

    2sk to-92

    Abstract: No abstract text available
    Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92

    2SK613

    Abstract: SK813 2SK613-2 2SK613-4 2SK613-3 TMS23
    Text: S O NY CORP/COMPONENT PRODS 4TE D • 63flE363 0003077 2SK613 I SONY. Silicon N-Channel Junction FET Description Waking the best of Epitaxy and Pattern latest technology, 2 S K 6 13 accomplishes so far unattain able levels of performance. Usage with head amplifiers for video cameras


    OCR Scan     		PDF 63flE363 2SK613 3fl53fi3 D003G63 T-29-25 2SK613 SK813 2SK613-2 2SK613-4 2SK613-3 TMS23

    2SK619

    Abstract: high impedance amplifier
    Text: 2SK619 '> IJ z i y N F + MOS FET SILICON N-CHANNEL MOS FET HIGH FREQUENCY AMPLIFIER HIGH IMPEDANCE AMPLIFIER 1. . K V 4 > : Drain 2. V — X : Source 3. r — h : Gate Dimensions in mm (JED EC TO-126 MOD.) ABSOLUTE MAXIMUM RATINGS {T a = § m Y V 4 • V -


    OCR Scan     		PDF 2SK619 O-126 2SK619 high impedance amplifier

    2SK645

    Abstract: 2SK630 2SK626 2sk633 2SK63 2SK621 2SK647 2SK628 2SK629 2SK635
    Text: - 58 - Sí £ tt A f ffl MOS N E 200 DSX RF PA,SW MOS N E 800 DSS ±20 S V/UHF LN A GaAs N D 10 DSX RF A, t'ftltitl MOS N E 70 DSS * a % * 2SK617 « ± W 8 tëff 2SK618 2SK619 2SK62Û 2SK521 BÍL féT féT 2SK622 2SK623 2SK624 B aL föT 2SK625 V * fi JÈ


    OCR Scan     		PDF 2SK616 2SK617 2SK618 2SK619 2SK620 2SK755 2SK632 150max 2SK757 2SK633 2SK645 2SK630 2SK626 2sk633 2SK63 2SK621 2SK647 2SK628 2SK629 2SK635

    Untitled

    Abstract: No abstract text available
    Text: S ONY CORP/COMPONENT PRODS MTE D 63ÖE363 0DD3D77 b • S ON Y SONY, 2SK613 Silicon N-Channel Junction FET ^ < 2 5^ Package Outline Description Unit: mm Waking the best of Epitaxy and Pattern latest technology, 2SK613 accomplishes so far unattain­ able levels of performance.


    OCR Scan     		PDF 0DD3D77 2SK613 2SK613 00030fl T-29-25

    2SK612

    Abstract: 42755S
    Text: N E C ELECTRONICS INC 6427525 N E C ELECTRONICS INC TÛ DeT|l,42755S DOlflflM? 3 98D 18847 D W MOS FIELD EFFECT POWER TRANSISTOR 2SK612 FAST S W IT C H IN G N-CHANNEL SILICON POWER M O S FET IN D U STR IA L USE FE A T U R E S PACKAG E D IM E N S IO N S U n it: m m


    OCR Scan     		PDF 42755S 2SK612 1986M 2SK612

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1