Untitled
Abstract: No abstract text available
Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation
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2SK1103
2SJ163
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analog switching ic
Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081
Text: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)
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XN08081
XN8081)
2SK1103
UNR1213
UN1213)
analog switching ic
2SK1103
UN1213
UNR1213
XN08081
XN8081
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2SK1103
Abstract: XN1D873
Text: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter
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XN1D873
2SK1103
2SK1103
XN1D873
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2SK1103
Abstract: XP1D873
Text: Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 0.2±0.05 For analog switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SK1103 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 0.12 – 0.02 ● Two elements incorporated into one package.
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XP1D873
2SK1103
2SK1103
XP1D873
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
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2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
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FET121
Abstract: 2SK1103 XN0D873 XN1D873
Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C
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XN0D873
XN1D873)
2SK1103
SC-74A
FET121
2SK1103
XN0D873
XN1D873
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PDF
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2SJ163
Abstract: 2SK1103
Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current
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2SK1103
2SJ163
2SJ163
2SK1103
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PDF
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2SK1103
Abstract: UN1213 XP8081
Text: Composite Transistors XP8081 Silicon N-channel junction FET Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1
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XP8081
2SK1103
UN1213
UN1213
XP8081
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PDF
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FET121
Abstract: No abstract text available
Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 1.50+0.25 –0.05 3 1 • Basic Part Number 0.65±0.15 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • 2SK1103 x 2 Drain current Gate current
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XN0D873
XN1D873)
2SK1103
FET121
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Unit Gate to Drain voltage VGDS −65 V Drain current ID 20 mA Gate current
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2SK1103
2SJ0163
2SJ163)
O-236
SC-59
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PDF
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
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Junction-FET
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current
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2SK1103
2SJ163
Junction-FET
2SJ163
2SK1103
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VDSV
Abstract: 2SJ163 2SK1103 mini 29
Text: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20
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2SJ163
2SK1103
VDSV
2SJ163
2SK1103
mini 29
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 ue pl d in an c se ed lud
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2002/95/EC)
2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
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PDF
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2SJ0163
Abstract: 2SK1103
Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-channel junction FET Unit: mm For switching circuits Complementary to 2SJ0163 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Rating Unit VGDS −65 V ID 20 mA
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2SK1103
2SJ0163
2SJ0163
2SK1103
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Untitled
Abstract: No abstract text available
Text: 2SJ163 Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching Complementary with 2SK1103 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID –20 mA Gate current IG –10
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2SJ163
2SK1103
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance • Low-noise characteristics • Code
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2002/95/EC)
2SK1103
2SJ0163
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 • Package ■ Features
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2002/95/EC)
2SJ0163
2SJ163)
2SK1103
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation
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Original
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2SJ0163
2SJ163)
2SK1103
O-236
SC-59
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PDF
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2SJ0163
Abstract: 2SK1103
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance
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2002/95/EC)
2SK1103
2SJ0163
2SJ0163
2SK1103
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PDF
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation
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2SK1103
2SJ0163
2SJ163)
2SJ0163
2SJ163
2SK1103
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PDF
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05
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2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
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PDF
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Junction-FET
Abstract: 2SJ0163 2SJ163 2SK1103
Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current
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2SJ0163
2SJ163)
2SK1103
Junction-FET
2SJ0163
2SJ163
2SK1103
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PDF
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2SJ0163
Abstract: 2SJ163 2SK1103
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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Original
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2002/95/EC)
2SJ0163
2SJ163)
2SK1103
2SJ0163
2SJ163
2SK1103
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PDF
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