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    2SK60 Price and Stock

    Panasonic Electronic Components ERZ-B32SK602F

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    DigiKey ERZ-B32SK602F Bulk 100
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    Avnet Americas ERZ-B32SK602F Bulk 18 Weeks 100
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    Hitachi Ltd 2SK600

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    Bristol Electronics 2SK600 75
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    Quest Components 2SK600 60
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    2SK60 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK60 Unknown FET Data Book Scan PDF
    2SK60 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK60 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK60 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK60 Sony Silicon N-Channel Junction V-FET Scan PDF
    2SK600 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK600 Unknown FET Data Book Scan PDF
    2SK601 Panasonic TRANS MOSFET N-CH 80V 0.5A 3MINIP3-F1 Original PDF
    2SK601 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK601 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK601 Panasonic N-Channel MOS FET Original PDF
    2SK601 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK601 Unknown FET Data Book Scan PDF
    2SK601 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK601 Panasonic Silicon MOS FETs Scan PDF
    2SK602 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK602 Unknown FET Data Book Scan PDF
    2SK60-2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK603 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK603 Unknown FET Data Book Scan PDF

    2SK60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK0601

    Abstract: 2SK601
    Text: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)


    Original     		PDF 2SK0601 2SK601) 2SK0601 2SK601

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04


    Original     		PDF 2002/95/EC) 2SK0601 2SK601)

    Untitled

    Abstract: No abstract text available
    Text: 2SK601 Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS Unit : mm For switching ● High-speed switching ● Direct drive possible with CMOS, TTL ● Downsizing of sets by mini-power type package and automatic inser- 45˚ +0.1 1.0–0.2 0.4±0.08


    Original     		PDF 2SK601 500mA

    2SK0601

    Abstract: 2SK601
    Text: Silicon MOS FETs Small Signal 2SK0601 (2SK601) Silicon N-Channel MOS FET For switching unit: mm • Features Ratings Unit 80 V +0.25 0.4max. 0.4±0.08 +0.1 1.0–0.2 Symbol 45˚ 4.0–0.20 2.6±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter 1.5±0.1


    Original     		PDF 2SK0601 2SK601) 2SK0601 2SK601

    2SK0601

    Abstract: 2SK601 MS2002
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0601 2SK601) 2SK0601 2SK601 MS2002

    2SK60

    Abstract: 2SK601
    Text: Silicon MOS FETs Small Signal 2SK601 Silicon N-Channel MOS FET For switching unit: mm 1.5±0.1 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings (Ta = 25°C) +0.25 45˚ 4.0–0.20 2.6±0.1 ● Low ON-resistance RDS(on) ● High-speed switching


    Original     		PDF 2SK601 500mA 2SK60 2SK601

    2SK601

    Abstract: 2SK0601 2SK60
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 2.5±0.1 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0601 2SK601) 2SK601 2SK0601 2SK60

    SSSMini3-F1 transistor

    Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
    Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)


    Original     		PDF 2SK0601 2SK614) 2SK664) 2SK665) 2SK1228 2SK1374 2SK3539 2SK3546J 2SK3547 2SK2211 SSSMini3-F1 transistor 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 3 2 0.5±0.08 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0601 2SK601)

    2SK0601

    Abstract: 2SK601
    Text: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 0.4 max. 2.6±0.1 Rating Unit Drain to source voltage VDS 80 V Gate to source voltage VGSO 20 V Drain current


    Original     		PDF 2SK0601 2SK601) 2SK0601 2SK601

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.5±0.1 VDS Gate-source voltage (Drain open) VGSO Drain current ID Peak drain current


    Original     		PDF 2002/95/EC) 2SK0601 2SK601)

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    2sk to-92

    Abstract: No abstract text available
    Text: Field Effect Transistors # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Digital/ analog switching Nch Pch Electrical Characteristics (Ta = 2 5 °C) Type No. V ds * V dss (V) V gso Id (V) (A) (mW) 2SK601 80 20 0.5 2SK614 80


    OCR Scan     		PDF 2SK601 2SK614 2SK615 2SK620 A2SK2276 A2SK2342 2sk to-92

    2SK582

    Abstract: 2SK600 2SK581 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604
    Text: 56 - f m & ffl tt £ & m ft K 2SK578 £ X V* it ? Jk V fë [* * £* (V) H E Pp/PcH (A) * (max) (A) (W) & <Ta=25eO) ¥f m I g ss Vg s (V) (min) (max) Vds (A) (A) (V) (min) (max) Vds (V) (V) (V) (min) (S) Id (A) •—Vt - Id (A) HS PSW MOS N E 150 DSS


    OCR Scan     		PDF 2SK578 2SK579 2SK580 2SK581 2SK582 10mfti 2SK809 2SK604 25dBtyp 100MHz 2SK582 2SK600 2SK609 2SK610 2SK606 2SK603 2sk611 2SK590 2SK604

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    2SK609

    Abstract: No abstract text available
    Text: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY


    OCR Scan     		PDF NE710 NE71000) E71083 E71084 b4275E5 NE71000 NE71000L NE71000M 2SK609

    2SK620

    Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK620 3SK268 3SK269 3SK286 CAMERA MOS 2SJ164

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


    OCR Scan     		PDF 2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123

    2SK68A

    Abstract: 2SK44 D 2SK70 2SK79 2SK63 2SK44 2SK68 2SK73 2SK163 2SK46
    Text: - 30 - f m « tt « ffl m & ft 5fi K 2SK43 S> 'K- 2SK44 2SK44(IH 2SK45 NEC 2SK47 NBC * -30 0 DC, LF A. A-SW w D -30 GDO LF LN A N' D -20 GDS LF LN A N D -20 GDS DC, RF N D -22 GDO N D -30 GDO N D -20 GDO C—MIC 2SK46 (V) LF A, RF 1 /E. Vg s * X * t (V)


    OCR Scan     		PDF 2SK43 2SK44 2SK45 2SK46 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 D 2SK70 2SK79 2SK63 2SK68 2SK73 2SK163 2SK46