SJF00005BED
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
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2SK0123
2SK123)
SJF00005BED
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2SK1233
Abstract: No abstract text available
Text: Ordering number : 3 1 6 2 N-Channel GaAs MES FET 2SK1233 4GHz-Band Local Oscillator, Amplifier Applications
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2SK1233
2SK1233
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2SK1234
Abstract: No abstract text available
Text: Ordering number : 3 1 6 3 N-Channel GaAs MES FET 2SK1234 4GHz-Band Local Oscillator, Amplifier Applications
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2SK1234
2SK1234
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std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2SK1119
2SK1120
2SK1151
2SK1152
2SK1153
2SK1154
2SK1155
2SK1156
2SK1157
2SK1158
std2n52
stp2na60
buz102 equivalent
SSH6N80
rfp60n06
replacement for IRL2203N
BUZ91 equivalent
RFP60N06LE
IRFP460 cross reference
buz91a equivalent
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit VDSO 20 V Drain to Gate voltage
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2SK0123
2SK123)
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2SK1237
Abstract: No abstract text available
Text: Ordering number : 3 1 6 6 N-Channel GaAs MES FET 2SK1237 12GHz-Band Local Oscillator, Amplifier Applications
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2SK1237
12GHz-Band
2SK1237
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Untitled
Abstract: No abstract text available
Text: 2SK123 Silicon Junction FETs Small Signal 2SK123 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For electret capacitor microphone +0.2 5.8 -0.3 +0.25 1.5 -0.05 1.9±0.1 +0.1 0.4 -0.05 2.4±0.1 1.45 +0.2 2 Symbol Rating Drain-Source voltage
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2SK123
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2SK123 transistor
Abstract: 2SK0123 2SK123 SJF00005BED
Text: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
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2SK0123
2SK123)
2SK123 transistor
2SK0123
2SK123
SJF00005BED
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2SK123
Abstract: 2SK0123 PANASONIC
Text: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm +0.2 5.8−0.3 1.9±0.1 +0.1 Drain to Gate voltage VDGO 20 V Drain to Source current IDSO
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2SK0123
2SK123)
2SK123
2SK0123
PANASONIC
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2SK1236
Abstract: No abstract text available
Text: Ordering number : 3 1 6 5 N-Channel GaAs MES FET 2SK1236 12GHz-Band Local Oscillator, Amplifier Applications
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2SK1236
12GHz-Band
2SK1236
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2SK123
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK123 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm +0.2 5.8−0.3 +0.25 1.5−0.05 2.4±0.1 0.4−0.05 1.9±0.1 +0.1 • Features +0.1 0.4−0.05 1.45
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2SK123
2SK123
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2SK1239
Abstract: No abstract text available
Text: Ordering number : 3 1 6 8 N-Channel GaAs MES FET 2SK1239 12GHz-Band Local Oscillator, Amplifier Applications
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2SK1239
12GHz-Band
2SK1239
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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OCR Scan
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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Pan Overseas
Abstract: 8GHz oscillator
Text: F 2SK1234 No. 3163 SA N Y O i N-ChannclGaAsMESKIST 4G IIz-B a n d Local Oscillator, A m p lifie r A pplications F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator * Adoption of high reliable protection film A b s o lu te M axim um R a tin g s a tT a = 25°C
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OCR Scan
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H-150
7219TA
Pan Overseas
8GHz oscillator
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s3v 70
Abstract: S3V 05 vus3
Text: S JM Ê Y O J I 2SK1239 N0.316B N -C hanncl GaA s MES FRT 12GHz-Band Local Oscillator, F e a tu re s • M etal p ack ag e • Low noise fig u re , h ig h gain • A doption of high re lia b le protection film A b s o lu te M a x im u m R a tin g s a t T a = 25°C
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OCR Scan
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12GHz-Band
7219TA
s3v 70
S3V 05
vus3
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2SK1238
Abstract: No abstract text available
Text: F SA\YO J 2SK1238 No.3167 I N -C hannel GaA s MISS FET 12GHz-Band Local Oscillator, _A m plifier Applications ':K * f / S ä k ., F e a tu re s '# * C eram ic package • Low noise figure, high gain ►A doption of high re lia b le p ro tectio n film
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OCR Scan
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2SK1238
12GHz-Band
7219TA/TS
2SK1238
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 22E D 7TT7G7L, OOObó^b •- S • T -3 I-2 5 2SK1236 2072 @3165 N-Channel GaAs M ES FET 12GHz-Band Local OSC, Amp Applications F e a tu r e s • C eram ic package • Adoption of high reliable protection film A b s o lu te M a x im u m R a tin g s a t Ta = 25°C
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OCR Scan
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2SK1236
12GHz-Band
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Untitled
Abstract: No abstract text available
Text: I 44^b205 00132b! ITI • H I T 4 HITACHI/ OPTOELECTRONICS blE » - 2SK1230 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 1. Gate 2. Drain • No Secondary Breakdown
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OCR Scan
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2SK1230
00132b!
O-220FM)
l32b4
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP SEE D GODbäi4 1 imOlh T -3 1 -2 5 2SK1234 2071 N -C h a n n e l G aA s M E S FET 4GHz-Band Local OSC, Amp Applications 3163 F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator • Adoption of high reliable protection film
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2SK1234
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CÔRP 22E D DOObflTS 3 T-3/-2S 2SK1235 2071 3164 N-Channel GaAs MÊS FET 12GHz-Band Local OSC, Amp Applications F e a tu r e s •C asting mold package ■Suited for 12GHz-band local oscillation • Adoption of high reliable protection film
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OCR Scan
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2SK1235
12GHz-Band
Fo066]
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Untitled
Abstract: No abstract text available
Text: 2SK1235 No.3164 N-Channel GaAs MI3S F E T SAiYO 12G H z-B and Loca,] O scillato r, _ A m p lifie r A p p lic atio n s F eatu res •Casting mold package •Suited for 12GIiz-band local oscillation * Adoption of high reliable protection film A b so lu te M axim um R atin g s a t T a = 25°C
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OCR Scan
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12GHz-Band
7219TA/TS
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PDF
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AO9T
Abstract: 2SK1233
Text: SANYO SEMICONDUCTOR CORP 22E » 7T=i 707L . OOÜ bñ TB T '- 3 1 - 2 5 2SK1233 2071 N-Channel GaAs M ES FET 4GHz-Band Local OSC, Amp Applications 3162 F e a tu re s •C asting mold package • Suited for 4GHz-band local oscillator ■Adoption of high reliable protection film
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OCR Scan
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2SK1233
AO9T
2SK1233
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 22E D 7 eH 7 0 7 b QDDböT? 7 • T - 3 1 '2 0 2SK1237 2072 3166 N-Channel GaAs MES FET 12GHz-Band Local OSC, Amp Applications F e a tu re s • Ceramic package ■High gain ■Adoption of high reliable protection film A bso lu te M axim um R atin g s atT a= 25°C
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OCR Scan
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2SK1237
12GHz-Band
D00b70b
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PDF
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2SK1238
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP ESE D i m o GOObflTÖ i h • T -3 I-Z S 2SK1238 2072 3167 1 N-Channel GaAs MES FET 12GHz-Band Local OSC* Amp Applications F ea tu res • Ceramic package ■Low noise figure, high gain • Adoption of high reliable protection film
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OCR Scan
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2SK1238
12GHz-Band
2SK1238
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