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    2SK198 Search Results

    2SK198 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK198 Panasonic For Low-Frequency Amplification Original PDF
    2SK198 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK198 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK198 Panasonic N-Channel Junction FET Original PDF
    2SK198 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK198 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK198 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK198 Unknown FET Data Book Scan PDF
    2SK198 Panasonic Silicon MOS FETs Scan PDF
    2SK1981-01 Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1981-01 Fuji Electric N-channel MOS-FET Original PDF
    2SK1981-01 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1982 Unknown Scan PDF
    2SK1982-01M Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1982-01MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1982-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1983-01 Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK1983-01 Fuji Electric N-channel MOS-FET Original PDF
    2SK1983-01 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1984-01M Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK198 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1983-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    2SK1983-01 PDF

    2SK0198

    Abstract: 2SK198
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic


    Original
    2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1980 Power F-MOS FETs 2SK1980 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche ● No 6.0±0.5 1.0±0.1 switching : tf= 25ns secondary breakdown 1.5±0.1 ● High-speed 3.4±0.3 8.5±0.2 VGSS=±30V guaranteed 10.0±0.3 ● energy capability guaranteed : EAS > 15mJ


    Original
    2SK1980 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1981-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original
    2SK1981-01 O-220AB SC-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1986-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original
    2SK1986-01 O-220AB SC-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK198 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30Â V(BR)GSS (V)30Ê I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original
    2SK198 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type


    Original
    2SK0198 2SK198) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30


    Original
    2002/95/EC) 2SK0198 2SK198) PDF

    2SK0198

    Abstract: 2SK198
    Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 1.5 –0.05 0.95 +0.2 ● High mutual conductance gm


    Original
    2SK0198 2SK198) 2SK0198 2SK198 PDF

    2SK1986-01

    Abstract: No abstract text available
    Text: 2SK1986-01 N-channel MOS-FET FAP-IIA Series 1000V > Features - 3,6Ω 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    2SK1986-01 2SK1986-01 PDF

    2SK1981-01

    Abstract: No abstract text available
    Text: 2SK1981-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    2SK1981-01 2SK1981-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic


    Original
    2002/95/EC) 2SK0198 2SK198) PDF

    2SK1982

    Abstract: No abstract text available
    Text: 2SK1982-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications Switching regulators


    Original
    2SK1982-01MR O-220F15 SC-67 2SK1982 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1984-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications Switching regulators


    Original
    2SK1984-01MR O-220F15 SC-67 PDF

    2SK0198

    Abstract: 2SK198
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic


    Original
    2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198 PDF

    2SK1984-01M

    Abstract: 2SK1984
    Text: 2SK1984-01M N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    2SK1984-01M 2SK1984-01M 2SK1984 PDF

    2SK0198

    Abstract: 2SK198
    Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type


    Original
    2SK0198 2SK198) 2SK0198 2SK198 PDF

    mosfet 500v

    Abstract: No abstract text available
    Text: F U JI 2SK1981-01 N-channel MOS-FET 500V 0,76Q 10A 80W FAP-IIA Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan
    2SK1981-01 mosfet 500v PDF

    2SJ83

    Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
    Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m


    OCR Scan
    2SK19600 2SK197 2SK198 2SK199 2SK201 2SK217 2SK218 2SK220 2SK221 2SS222 2SJ83 2SK238 2SJ82 2SK241 2SK240 2SK203 2S119 PDF

    2SK1985

    Abstract: No abstract text available
    Text: 2SK1985-01 MR FUJI PO W ER M O S-FET N-iiHANNEL SILICON POWER MOS-FET F A P - IIA S E R IE S Outline Drawings • Features • High speed switching • Low on-resistance • Do secondary breakdown • l o w driving power • High voltage • Vc.s~ ± 3 0 V Guarantee


    OCR Scan
    2SK1985-01 2SK1985 PDF

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan
    2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286 PDF

    nec 7912

    Abstract: TC-7912 2SK1988 2SK1989 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan
    2SK1988, 2SK1988 2SK1989 nec 7912 TC-7912 MEI-1202 TEA-1035 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1982-01 M R FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching • Lew on-resistance • No secondary breakdown • Low driving power • High voltage Gate • V S = + 3 0V Guarantee


    OCR Scan
    2SK1982-01 SC-67 PDF

    nec 7912

    Abstract: TRANSISTOR 7912 2SK1989 2SK1988 TC-7912 MEI-1202 TEA-1035
    Text: DATA SHEET ,r NEC - » - MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989 Â SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1988, 1989 is N -channel M O S Field Effect T ra n ­ PACKAGE DIMENSIONS in millim eters


    OCR Scan
    2SK1988, 2SK1988 2SK1989 IEI-1209) nec 7912 TRANSISTOR 7912 TC-7912 MEI-1202 TEA-1035 PDF