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    2SK662 Search Results

    2SK662 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK662 Panasonic N-Channel Junction FET Original PDF
    2SK662 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK662 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK662 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK662 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK662 Unknown FET Data Book Scan PDF
    2SK662 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK662 Panasonic Silicon MOS FETs Scan PDF
    2SK662P Panasonic TRANS JFET N-CH 30V 3A 3S Original PDF
    2SK662Q Panasonic TRANS JFET N-CH 30V 6A 3S Original PDF
    2SK662R Panasonic TRANS JFET N-CH 30V 12A 3S Original PDF

    2SK662 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK0662

    Abstract: 2SK662
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0662 2SK662) 2SK0662 2SK662

    2SK0662

    Abstract: 2SK662
    Text: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 • Features 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 0.425 ● High mutual conductance gm ● Low noise type


    Original     		PDF 2SK0662 2SK662) 2SK0662 2SK662

    2SK0662

    Abstract: 2SK662
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK0662 2SK662) 2SK0662 2SK662

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚


    Original     		PDF 2002/95/EC) 2SK0662 2SK662)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET For low-frequency and low-noise amplification • Package • Code SMini3-G1 • Pin Name M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SK0662 2SK662)

    2SK0662

    Abstract: 2SK662
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET For low-frequency and low-noise amplification • Package ■ Features • High mutual conductance gm • Low noise type


    Original     		PDF 2002/95/EC) 2SK0662 2SK662) 2SK0662 2SK662

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te


    Original     		PDF 2002/95/EC) 2SK0662 2SK662)

    2SK662

    Abstract: GM marking 2SK66
    Text: Silicon Junction FETs Small Signal 2SK662 Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 • Features 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 0.425 ● High mutual conductance gm ● Low noise type ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.


    Original     		PDF 2SK662 2SK662 GM marking 2SK66

    2SK0662

    Abstract: 2SK662
    Text: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High mutual conductance gm • Low noise type


    Original     		PDF 2SK0662 2SK662) 2SK0662 2SK662

    Untitled

    Abstract: No abstract text available
    Text: 2SK662 Silicon Junction FETs Small Signal 2SK662 Silicon N-Channel Junction Unit : mm For low-frequency amplification 2.1±0.1 0.425 • Features High mutual conductance gm ● Low noise type ● Downsizing of sets by S-mini type package and automatic insertion


    Original     		PDF 2SK662

    2SK0662

    Abstract: 2SK662 gm 64 general semiconductor
    Text: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification (0.425) unit: mm 0.3+0.1 –0.0 ● High mutual conductance gm ● Low noise type ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.


    Original     		PDF 2SK0662 2SK662) 2SK0662 2SK662 gm 64 general semiconductor

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original     		PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    3sk fet

    Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
    Text: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663


    OCR Scan     		PDF 2SJ364 2SK123 2SK662 2SK663 2SK301 3sk fet 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301

    2SK653

    Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
    Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s


    OCR Scan     		PDF 2SK648 2SK649 2SK650 2SK651 150ni 2SK652 2SK665 50MHz 2SK666 2SK765 2SK653 2SK671 Gv-80dB 2SK674 2SK669 2SK677

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286

    Untitled

    Abstract: No abstract text available
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type


    OCR Scan     		PDF 2SJ0385 A2SK2380 2SK1103 2SJ364 2SJ163 2SK662 2SK198 2SK663 2SK374 2SK123

    3SK192

    Abstract: 2SK651
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )


    OCR Scan     		PDF 2SK2380 2SJ0385 2SJ364 2SK662 2SK663 2SK1103 2SJ163 2SK198 2SK374 2SK123 3SK192 2SK651

    2sc4780

    Abstract: A1531A 2SC4661 2SC4670 MA141K 2SC4239 2SD1819 R A745W
    Text: —5/ S Mini Type 3-pin Package Outline Transistors, Diodes Unit : mm 2 1 ± 0.1 1.25 ± 0.3 0.425 m uw l S = - S ( 3 S i ) / N - 7 ^ - - v l i . S t # W 5 - S ( 3 i f f i i ) ^ 0y ^ - v £ i u 5 - ^ ( 3 « ^ ) ¿ lP lli< 7 ) 1 4 f ! li H I # L fc . h 7 > v '7 , i? .


    OCR Scan     		PDF MA741 A741W MA742 MA744 MA745 A745W 2sc4780 A1531A 2SC4661 2SC4670 MA141K 2SC4239 2SD1819 R A745W

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    K614

    Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
    Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)


    OCR Scan     		PDF 2SK662 2SK1103 2SJ163 2SK198 2SK374 2SK123 2SK1216 2SK1842 2SJ164 2SK301 K614 K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996