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    2SD1684 Search Results

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    2SD1684 Price and Stock

    Rochester Electronics LLC 2SD1684T

    POWER BIPOLAR TRANSISTOR NPN
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    DigiKey 2SD1684T Bulk 74,352 1,211
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    Rochester Electronics LLC 2SD1684S

    POWER BIPOLAR TRANSISTOR NPN
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    DigiKey 2SD1684S Bulk 6,686 1,025
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    onsemi 2SD1684T

    Bipolar (BJT) Single Transistor, NPN, 100 V, 1.5 A, 10 W, TO-126, Through Hole - Bulk (Alt: 2SD1684T)
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    Avnet Americas 2SD1684T Bulk 4 Weeks 1,457
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    Rochester Electronics 2SD1684T 26,360 1
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    onsemi 2SD1684S

    Transistor NPN 100V 1.5A 3-Pin TO-126ML - Bulk (Alt: 2SD1684S)
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    Avnet Americas 2SD1684S Bulk 4 Weeks 1,233
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    Rochester Electronics 2SD1684S 6,686 1
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    SANYO Semiconductor Co Ltd 2SD1684S

    INSTOCK
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    Chip 1 Exchange 2SD1684S 4,000
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    2SD1684 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1684 Sanyo Semiconductor Low-frequency power amplifier, medium-speed switch Original PDF
    2SD1684 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistor Original PDF
    2SD1684 Various Russian Datasheets Transistor Original PDF
    2SD1684 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1684 Unknown NPN epitaxial planar silicon transistor, 100V/1,5A switching application Scan PDF
    2SD1684 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1684 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1684 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1684 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1684R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1684S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1684T Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1684T Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF

    2SD1684 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1144

    Abstract: 2SD1684
    Text: Ordering number:2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features Package Dimensions • Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density


    Original     		PDF 2SB1144/2SD1684 00V/1 2042B 2SB1144/2SD1684] 2SB1144 O-126ML 2SB1144 2SD1684

    2sd1684

    Abstract: 2SB1144
    Text: Ordering number:ENN2041B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Package Dimensions unit:mm 2042B [2SB1144/2SD1684] 8.0 4.0 1.0 1.0 3.3 1.4 • Adoption of FBET and MBIT processes. · High breakdown voltage.


    Original     		PDF ENN2041B 2SB1144/2SD1684 00V/1 2042B 2SB1144/2SD1684] 2SB1144 O-126ML 2sd1684 2SB1144

    Untitled

    Abstract: No abstract text available
    Text: 2SD1684 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.400


    Original     		PDF 2SD1684 Freq150M StyleTO-126

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    650nm laser diode 200mw

    Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
    Text: SANYO Laser Diodes support advanced information society. SANYO has a wide range of laser diodes from 405nm to 830nm in the line-up. SANYO laser diodes are characterized by high power models for DVD±R/RW/-RAM and CD-R. There are also 635nm models for industrial applications such as laser display, bar-code scanners,


    Original     		PDF 405nm 830nm 635nm 808nm 650nm laser diode 200mw DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    DL-4146-101

    Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
    Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division


    Original     		PDF

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


    Original     		PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80

    2sc5694

    Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
    Text: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP


    Original     		PDF O-126 O-126ML O-126LP 2SB1165 2SD1722 2SB1166 2SD1723 2SB1167 2sc5694 TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    DL-3147-060

    Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
    Text: LASER DIODE '05-03 Tottori SANYO Electric Co., Ltd Photonics Business Unit Laser sales Section 1-1-10 Ueno, Taito-ku, Tokyo, 110-8534, JAPAN Tel : +81-3-3837-6272 Fax : +81-3-3837-6390 Photonics Business Unit 5-318, Tachikawa-cho, Tottori-city, Tottori, 680-8634 JAPAN


    Original     		PDF 405nm 980nm DL-3147-060 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


    Original     		PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    2SD1684

    Abstract: 2041A 2SB1144 2SD1684B
    Text: Ordering n u m b e r:E N 2041A 2SB1144/2SD1684 NO.2041A PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp, Medium-Speed Switching Applications F e a tu re s • Adoption of FBET and MBIT processes. • High breakdown voltage • Low saturation voltage.


    OCR Scan     		PDF EN2041A 2SB1144/2SD1684 2SB1144 2SD1684 2041A 2SB1144 2SD1684B

    2042A

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 12E D1 ?117Q7k UQ04Q7S T CORP T -3 3 -J7 2SB1144 P N P / npn Epitaxial Planar Silico n Transistors 2042A 2SD1684 2041A Low Frequency Power Ampf Medium Speed Switching Applications Features . Adoption of FBET, MBIT processes . High breakdown voltage and large current capacity


    OCR Scan     		PDF 2SB1144 2SD1684 IS-126 IS-20MA IS-313 IS-313A 2042A

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


    OCR Scan     		PDF 2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


    OCR Scan     		PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    nec 2501

    Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
    Text: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA


    OCR Scan     		PDF 2SC2473 2SC2474 2SC2475 2SC2476 2SC2477 2SC2480 2SC2451 2SC2482 2SD2483 2SC2484 nec 2501 nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534

    2SB1267

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF


    OCR Scan     		PDF 2SC4727 2SC4728 2SC4729 2SD1235 T0220 2SDI236L 2SD1237L 2SA1469 2SB1267

    SC-62

    Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
    Text: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)


    OCR Scan     		PDF 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1692 2SB1150 O-126) SC-62 2SD1666 2SD1667 2SD1668 2SD1669

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


    OCR Scan     		PDF T0-126LP MT95C123TR 2SB1205 2SD1801

    NEC 2SD1564

    Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2SC4488 2SD1558
    Text: - 256 - M £ Type No. M % a Manuf. SANYO 2 TOSHIBA NEC 2SD 1986 □ —A 2SD1190 2SD686 2SD1564 2SD 1987 □—A 2SD1825 2SD1414 2SD1595 2SD 1988 □ —A ÍZ. HITACHI 2SD1558 * ± FU JITSU fé T MATSUSHITA □ —A T 2SD 1991 r fé T 2SD1991A 2SD 1992 y


    OCR Scan     		PDF 2SD1986 2SD1987 2SD1988 2SD1989 2SD1990 2SD1991 2SD1992 2SD1993 2SD1994 2SD1995 NEC 2SD1564 2SC3296 2sd2394 2012 NEC 2sd1780 2SD1991R 2SC4488 2SD1558

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 12E D I CORP WÊÊiÊSÊÊKfÊ2SB1144 2041A 7 n 7 G7 ti DDGS1 7 Ö T'Zl-oJ N P N / pnp Epitaxial P la n a r S ilic o n T ra n sisto rs 2042A Low Frequency Power Amp, Medium Speed Switching Applications Features . Adoption of FBET, MBIT processes


    OCR Scan     		PDF 2SB1144 IS-20MA IS-313 IS-313A 1S-126A Q0D37S1

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


    OCR Scan     		PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    2SD1617

    Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
    Text: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60


    OCR Scan     		PDF 2SB1116 2SB1116A 2SB1119 T0126ML) 2SB1141 2SD1682 2SB1142 2SD1683 2SD1617 2sb111 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124