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    NTE Electronics Inc 2N2646

    T-SI- UNIJUNCTION
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    Solid State Inc 2N2646

    UNI JUNCT TRANS TO18
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    2N2646 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N2646 Advanced Semiconductor Silicon P-N Unijunction Transistor Original PDF
    2N2646 Comset Semiconductors Silicon Junction Transistors Original PDF
    2N2646 Advanced Semiconductor Silicon PN Unijunction Transistor Scan PDF
    2N2646 Boca Semiconductor Silicon PN Unijuction Transistor Scan PDF
    2N2646 Central Semiconductor UNIJUNCTION TRANSISTORS Scan PDF
    2N2646 Central Semiconductor Scan PDF
    2N2646 Digitron SILICON ANNULAR PN UNIJUNCTION TRANSISTORS Scan PDF
    2N2646 General Electric Semiconductor Data Book 1971 Scan PDF
    2N2646 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N2646 General Electric Silicon unijunction transistor. 30V, 50mA. Scan PDF
    2N2646 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2646 Motorola The European Selection Data Book 1976 Scan PDF
    2N2646 Motorola European Master Selection Guide 1986 Scan PDF
    2N2646 Motorola Silicon PN unijunction transistor. Scan PDF
    2N2646 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2646 Unknown GE Transistor Specifications Scan PDF
    2N2646 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2N2646 Unknown GE Transistor Specifications Scan PDF
    2N2646 Unknown Short Form Datasheet and Cross Reference Data Scan PDF
    2N2646 Unknown Short Form Datasheet and Cross Reference Data Scan PDF

    2N2646 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2646

    Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
    Text: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


    Original     		PDF 2N2646 2N2647 2N2646 2N2647 High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"

    2n2646

    Abstract: 2N2646 to18
    Text: 2N2646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2646 Availability Online Store


    Original     		PDF 2N2646 2N2646 Specifications973) STV3208 2N2646 to18

    2N2646

    Abstract: 2N2646 transistor TO-220 2N2646
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


    Original     		PDF 2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646

    2n2646

    Abstract: 2n2647
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


    Original     		PDF 2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


    Original     		PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    2N2646

    Abstract: SCR 2N2646 2N2646 CIRCUIT 2n2647 High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol
    Text: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


    Original     		PDF 2N2646 2N2647 2N2646 2N2647 SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol

    2n2646 2n2647

    Abstract: 2N2646 n2646
    Text: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current


    OCR Scan     		PDF 2N2646, 2N2647 2n2646 2n2647 2N2646 n2646

    2N2646

    Abstract: scr firing scr firing circuit D5J37 2N2646-47
    Text: Silicon D5J37 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. ABSOLUTE MAXIMUM RATINGS: 25°C (Note 1) Pow er D issipation RMS Em itter C urrent Peak Em itter C urrent 300 mw 50 ma 2 amperes 30 volts


    OCR Scan     		PDF 2N2646-47 10/xfd D5J37 2N2646 scr firing scr firing circuit

    2N2646-47

    Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
    Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘


    OCR Scan     		PDF 2N2646-47 30Volts 35Volts 10/xF D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN

    Unijunction transistor 2N2646 of

    Abstract: 2N2646P
    Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER


    OCR Scan     		PDF 2N2646 C8444 Unijunction transistor 2N2646 of 2N2646P

    transistor 2N2646

    Abstract: 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor
    Text: N AMER P H I L I P S / D I S C R E T E bTE D bbSBTBl DDEfllOM 77b P h ilip s S em ico n d u cto rs 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E D A T A SYM BOL _V eB2


    OCR Scan     		PDF 2N2646 -TO-18 002fllD7 transistor 2N2646 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor

    2N4947

    Abstract: MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264
    Text: IN T R IN S IC S T A N D O F F R A T IO n M IN. r I 2N2417 TYPE 2N 2417A 2N 2417B 2N 2418 2N 2418A 2N 2418B 2N2419 2N241ÔB 2 N2420 2 N2420A 2N 2420B 2N2421 2N 2421A 2N 2421B ! 2N 242 2’ ’ j 2N 2422A • 2N 2422B 2N2646 2N2647 c M A X. 0.51 0.61 0.61 0.51


    OCR Scan     		PDF IEB20Â 2N2417 2N2417A 2N24178 2N2418 2N2418A 2N2418B 2N241Ã 0U0110A 2N2419B 2N4947 MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264

    2N2646

    Abstract: unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package
    Text: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) SO V S00 mW @ Te = 25 0C


    OCR Scan     		PDF 2N2646 1250C unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package

    transistor motorola 2n2646

    Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
    Text: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


    OCR Scan     		PDF b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646

    2N2646

    Abstract: 2N2646-47 scr firing D5J45 2N2646.47 2ampe
    Text: Silicon D5J45 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ratings: 2 5 °C Power Dissipation (Note 1) RMS Emitter Current Peak Emitter Current (Note 2) Emitter Reverse Voltage


    OCR Scan     		PDF D5J45 2N2646-47 35Volts D5J45 2N2646 scr firing 2N2646.47 2ampe

    2N2646

    Abstract: D5J43
    Text: Silicon D5J43 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b s o lu te m axim um ra tin g s : 2 5 ° C (Note 1) 300 m W 50 mA 2 Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘ -6 5 ° C to + 1 5 0 ‘


    OCR Scan     		PDF D5J43 2N2646-47 30Volts D5J43 2N2646

    Untitled

    Abstract: No abstract text available
    Text: m 2N2646 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A (PULSED) P diss 300 mW @ Tc = 25 °C Tj


    OCR Scan     		PDF 2N2646 2N2646

    2n2646 pin

    Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
    Text: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS


    OCR Scan     		PDF 0042bl0 2N2646 -TO-18 MCB443 2N2646 711Dfl2b 0042L 2n2646 pin 2N2646 pin configuration 2N2646 -pin configuration silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS

    2N2646

    Abstract: 2N4870 2N4871 AD 277 2N2647 KT132A KT133A KT132B
    Text: OflHonepexoAHbie ôwnoëÿpHbie TpaH3MCTopû OôoçHaneHèe A ía n o r Pmax 0,3 ÜMeœ.ôaç. max À 35 la èMn. (A ) 2,0 0,3 35 1,5 (B t ) KT132A KT132B KT133A KT133B rn 2N2646 2N2647 2N4870 2N4871 " 3 a â o fl T P A H 3 È C T O P " PecnyôëM Ka B en ap yc b , 2 2 0 0 6 4 ,


    OCR Scan     		PDF KT132A KT132B 2N2646 2N2647 Case22A-01 KT133A KT133B 2N4870 2N4871 KT-26 AD 277

    2N2646

    Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
    Text: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)


    OCR Scan     		PDF 2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647

    GES2646

    Abstract: 2N2646 Vp GES2647 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646
    Text: G E SOLID STATE 3875081 Ôï G E SOLID STATE »T|3fl7SDÔl 01E GD1 7 tm 17999 fl D T -“ 3 7 - a , / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92


    OCR Scan     		PDF 2N2646, 2N2647, GES2646, GES2647 -4257I GES2646 2N2646 Vp 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646

    2N2646

    Abstract: Unijunction transistor 2N2646 of 2N2646 Vp 2N2647 rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435
    Text: Datasheet central Sem iconductor Corp. 2N2646 2N2647 S IL I C O N UNIJUNCTION TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O - 18 CASE* Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		PDF 2N2646 2N2647 2N2646, 2N2647 100fi 2N2646 Unijunction transistor 2N2646 of 2N2646 Vp rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435

    2N2646

    Abstract: transistor 2N2646 2n2646 pin 2N2646 PHILIPS MC8444 Unijunction transistor 2N2646 of 2N2646 pin configuration EB20
    Text: PHILIPS INTERNATIONAL Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor QUICK R E F E R E N C E DATA PARAM ETER SYM BO L ~v EB2 emitter-base 2 voltage 'EM emitter current Pm


    OCR Scan     		PDF 2N2646 -TO-18 MB81S5 MSB031 MCB443 MC8444 /vV450 MSA119 transistor 2N2646 2n2646 pin 2N2646 PHILIPS Unijunction transistor 2N2646 of 2N2646 pin configuration EB20

    2N2646 motorola

    Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
    Text: M O T O R O L A SC D IOD ES / OP TO 95E D b3b755S QDÖQTQO b m T-iJ'U 2N2646 2N2647 P N Unijunction T ran sisto rs Silicon PN Unijunction Transistors . . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


    OCR Scan     		PDF b3b755S 2N2646 2N2647 2N2646 motorola 2N2647 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264