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    2SD1664 Search Results

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    2SD1664 Price and Stock

    ROHM Semiconductor 2SD1664T100P

    TRANS NPN 32V 1A MPT3
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    DigiKey 2SD1664T100P Digi-Reel 860 1
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    ROHM Semiconductor 2SD1664T100Q

    TRANS NPN 32V 1A MPT3
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    Avnet Silica 2SD1664T100Q 13 Weeks 1,000
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    ROHM Semiconductor 2SD1664T100R

    TRANS NPN 32V 1A MPT3
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    Bristol Electronics 2SD1664T100R 5,630
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    2SD1664T100R 1,000 13
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    Quest Components 2SD1664T100R 4,504
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    2SD1664T100R 800
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    2SD1664T100R 351
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    Win Source Electronics 2SD1664T100R 407,100
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    Micro Commercial Components 2SD1664-Q-TP

    TRANS NPN 32V 1A SOT89
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    Micro Commercial Components 2SD1664-R-TP

    Interface
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    2SD1664 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1664 Kexin Medium Power Transistor Original PDF
    2SD1664 ROHM Medium Power Transistor (32V, 1A) Original PDF
    2SD1664 ROHM Medium Power Transistor (32V, 1A) Original PDF
    2SD1664 TY Semiconductor Medium Power Transistor - SOT-89 Original PDF
    2SD1664 Unisonic Technologies MEDIUM POWER NPN TRANSISTOR Original PDF
    2SD1664 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1664 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1664 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1664 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SD1664 ROHM Transistor Selection Guide Scan PDF
    2SD1664-P-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD1664Q ROHM Medium Power Transistor (32V, 1A) Original PDF
    2SD1664-Q-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD1664T100P ROHM TRANSISTOR NPN 32V 1A SOT-89 TR Original PDF
    2SD1664T100P ROHM Medium Power Transistor (32 V, 1 A) Original PDF
    2SD1664T100Q ROHM TRANS NPN 32V 1A SOT-89 Original PDF
    2SD1664T100Q ROHM Medium Power Transistor (32 V, 1 A) Original PDF
    2SD1664T100R ROHM TRANS NPN 32V 1A SOT-89 Original PDF
    2SD1664T100R ROHM Medium Power Transistor (32 V, 1 A) Original PDF

    2SD1664 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd transistor marking br

    Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
    Text: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5


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    2SD1664 2SB1132 40x40x0 500mA -50mA 100MHz smd transistor marking br smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current


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    2SB1132 2SD1664 100ms 40x40x0 -50uA 30MHz PDF

    2SD1664

    Abstract: 4250 transistor
    Text: 2SD1664 NPN Silicon General Purpose Transistor Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 Features A E E1 SOT-89 b1 1 2 b 3 C e L Power dissipation o PCM : 0.5 W Tamb= 25 C e1 1.BASE Collector current 2.COLLECTOR ICM : 1 A 3.EMITTER


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    2SD1664 OT-89 01-Jun-2002 2SD1664 4250 transistor PDF

    2SD1858

    Abstract: 2SB1132 2SB1237 2SD1664 T100 rohm 2sd1664
    Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗


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    2SD1664 2SD1858 2SD1664 65Max. SC-62 500mA 2SB1132 2SB1237 R0039A 2SD1858 2SB1237 T100 rohm 2sd1664 PDF

    p64 transistor

    Abstract: 2SD1664PT 2SD1664P
    Text: CHENMKO ENTERPRISE CO.,LTD 2SD1664PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.


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    2SD1664PT SC-62/SOT-89 p64 transistor 2SD1664PT 2SD1664P PDF

    transistor Ic 1A datasheet NPN

    Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) transistor Ic 1A datasheet NPN 2SD1858 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor PDF

    2SD1664

    Abstract: No abstract text available
    Text: 2SD1664 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


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    2SD1664 OT-89 500mA, 2SD1664 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1664 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    2SD1664 Freq150M PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


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    2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 PDF

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗


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    2SD1664 2SD1858 2SD1664 65Max. SC-62 500mA R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage


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    2SD1664 500mA/50mA) OT-89 100MHz 11-Dec-08 PDF

    2SB1132

    Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
    Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


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    2SB1132 2SA1515S 2SB1237 500mA 2SD1664 2SD1858. 96-120-B12) 2SB1237 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SB1132 transistor PDF

    2SD1664

    Abstract: 2SB1132
    Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER


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    2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 2SB1132 PDF

    2SD1664

    Abstract: 3933
    Text: SPICE PARAMETER 2SD1664 by ROHM TR Div. * 2SD1664 NPN BJT model * Date: 2006/11/15 .MODEL 2SD1664 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1


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    2SD1664 Q2SD1664 625E-15 30E-15 28E-12 576E-12 55E-12 801E-9 2SD1664 3933 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1664 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER


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    OT-89-3L 2SD1664 OT-89-3L 500mA/50mA) 2SB1132 100mA 100MHz PDF

    2sd1664

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD1664 Features • • • • • • Complements to 2SB1132 Low collector-to-emitter saturation voltage.


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    2SD1664 2SB1132 2sd1664 PDF

    2SD1664

    Abstract: sot89 DAQ DAQ Electronics 2SB1132 transistor 2SD1664
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-89 2SD1664 OT-89 500mA/50mA) 2SB1132 100mA 100MHz 2SD1664 sot89 DAQ DAQ Electronics 2SB1132 transistor 2SD1664 PDF

    2SB1132

    Abstract: 2SD1664
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA z Compliments 2SD1664 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-89 2SB1132 OT-89 -500mA/-50mA 2SD1664 -100mA -500mA -50mA -50mA 30MHz 2SB1132 2SD1664 PDF

    marking 2sd1664

    Abstract: No abstract text available
    Text: Transistors Diodes SMD Type Product specification 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO


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    2SD1664 2SB1132 40x40x0 500mA -50mA 100MHz marking 2sd1664 PDF

    2SD1858

    Abstract: 2SB1132 2SB1237 2SD1664
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) 2SD1858 2SB1237 PDF

    Untitled

    Abstract: No abstract text available
    Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC /IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.


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    -500mA -50mA) 2SD1664-die 2SB1132-die PDF

    SC-62

    Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
    Text: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)


    OCR Scan
    2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1692 2SB1150 O-126) SC-62 2SD1666 2SD1667 2SD1668 2SD1669 PDF

    2SD1664

    Abstract: No abstract text available
    Text: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low


    OCR Scan
    2SD1664 500mA/50mA) /50mA) 2SB1132. 2SD1664 PDF

    2SD1664

    Abstract: Marking TRANSISTOR 232
    Text: 2SD1664 Transistor, NPN Features Dimensions U n its : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SD1664; DA-*, where ★ is hFE code • PC = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage,


    OCR Scan
    2SD1664 SC-62) 2SD1664; 2SB1132 2SD1664 Marking TRANSISTOR 232 PDF