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    2N3440 Price and Stock

    Rochester Electronics LLC 2N3440

    TRANS NPN 250V 1A TO39
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    Microchip Technology Inc 2N3440

    TRANS NPN 250V 1A TO39
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    Solid State Inc 2N3440

    TRANS NPN 250V 1A TO39
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    STMicroelectronics 2N3440

    TRANS NPN 250V 1A TO39
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    onsemi 2N3440

    TRANS NPN 250V 1A TO39
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    2N3440 Datasheets (110)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3440 Continental Device India NPN HIGH VOLTAGE SILICON TRANSISTORS Original PDF
    2N3440 Continental Device India High Voltage Silicon Transistors Original PDF
    2N3440 Microsemi NPN Low Power Silicon Transistor Original PDF
    2N3440 Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 250V 1A TO-39 Original PDF
    2N3440 Semelab High Voltage NPN Transistors Original PDF
    2N3440 Semelab HIGH VOLTAGE NPN TRANSISTORS - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=1 / Hfe=40-160 / fT(Hz)=15M / Pwr(W)=5 Original PDF
    2N3440 Siemens Cross Reference Guide 1998 Original PDF
    2N3440 STMicroelectronics SILICON NPN TRANSISTORS - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=1 / Hfe=40-160 / fT(Hz)=15M / Pwr(W)=5 Original PDF
    2N3440 STMicroelectronics TRANS GP BJT NPN 250V 1A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=1 / Hfe=40-160 / fT(Hz)=15M / Pwr(W)=5 Original PDF
    2N3440 Various Russian Datasheets Transistor Original PDF
    2N3440 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3440 Boca Semiconductor HIGH VOLTAGE AMPLIFIERS - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=1 / Hfe=40-160 / fT(Hz)=15M / Pwr(W)=5 Scan PDF
    2N3440 Central Semiconductor BJT, NPN, Silicon Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=1 / Hfe=40-160 / fT(Hz)=15M / Pwr(W)=5 Scan PDF
    2N3440 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3440 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3440 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3440 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N3440 Diode Transistor Transistor Short Form Data Scan PDF
    2N3440 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N3440 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF

    2N3440 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3440S

    Abstract: No abstract text available
    Text: 2N3440S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)


    Original     		PDF 2N3440S O205AD) 10/20m 1-Aug-02 2N3440S

    cc 3053

    Abstract: 2N3440U4
    Text: 2N3439U4 thru 2N3440U4 Compliant NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 *2N3440U4 only DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors


    Original     		PDF 2N3439U4 2N3440U4 MIL-PRF-19500/368 2N3440U4 LDS-0022-2, cc 3053

    2N5251

    Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
    Text: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX


    Original     		PDF 2N2880 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3740 2N3741 2N3749 2N5251 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421

    2N3439 JANS

    Abstract: No abstract text available
    Text: 2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors


    Original     		PDF 2N3439UA 2N3440UA MIL-PRF-19500/368 2N3440UA LDS-0022-3, 2N3439 JANS

    LCC3 weight

    Abstract: TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4
    Text: 2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13


    Original     		PDF 2N3439CSM4 2N3440CSM4 LCC3 weight TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4

    Untitled

    Abstract: No abstract text available
    Text: 2N3440S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)


    Original     		PDF 2N3440S O205AD) 10/20m 19-Jun-02

    2n3440

    Abstract: 2N3439
    Text: 2N3439 2N3440 SILICON NPN TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3439, 2N3440 are high voltage silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.


    Original     		PDF 2N3439 2N3440 2N3439, 2N3440

    2N3439

    Abstract: 2N3440
    Text: Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified DESCRIPTION


    Original     		PDF 2N3439 2N3440 300us, gm/500 2N3439 2N3440

    Untitled

    Abstract: No abstract text available
    Text: 2N3440+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)50m


    Original     		PDF 2N3440 Freq15M

    Untitled

    Abstract: No abstract text available
    Text: 2N3440L+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)50m


    Original     		PDF 2N3440L

    2N3440

    Abstract: 2N3439 2N3440L 2N3439L 2N3440 JAN
    Text: TECHNICAL DATA 2N3439 JTX, JTXV 2N3439L JTX, JTXV 2N3440 JTX, JTXV 2N3440L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/368 NPN SILICON LOW-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3439 2N3440 Units 350 450 250 300 Vdc Vdc Vdc Adc W W/0C


    Original     		PDF 2N3439 2N3439L 2N3440 2N3440L MIL-PRF-19500/368 2N3439 2N3440 2N3439L, 2N3440L, 2N3439, 2N3440 JAN

    Untitled

    Abstract: No abstract text available
    Text: 2N3439U4 thru 2N3440U4 Available on commercial versions NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 *2N3440U4 only DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors


    Original     		PDF 2N3439U4 2N3440U4 MIL-PRF-19500/368 2N3440U4 LDS-0022-2,

    2N3440

    Abstract: 2N3439 P008B Transistor 2n3440
    Text: 2N3439 2N3440 SILICON NPN TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.


    Original     		PDF 2N3439 2N3440 2N3439 2N3440 P008B P008B Transistor 2n3440

    2n3440 equivalent

    Abstract: JAN 2N3439 UA 2N3439 JANTX
    Text: 2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.


    Original     		PDF 2N3439 2N3440 MIL-PRF-19500/368 2N3440 LDS-0022, 2n3440 equivalent JAN 2N3439 UA 2N3439 JANTX

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650

    2n3441

    Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585
    Text: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial


    OCR Scan     		PDF 2N3441 2N3442 2N3583 2N3440 2N3584 2N3585 2N3439 2N3442 2N3439 2N3583 2N3584 2N3585

    2N5415

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE t. T E bbS3^31 0023138 OST 2N3439 2N3440 D IAPX SILICON NPN HIGH-VOLTAGE TRANSISTORS NPN high-voltage small-signal transistors in a TO-39 envelope and intended for use in telephony and professional communication equipment. Complementary type is 2N5415/5416.


    OCR Scan     		PDF 2N3439 2N3440 2N5415/5416. N3440 2N5415

    Untitled

    Abstract: No abstract text available
    Text: IMI = l t = «= = ìvx = 2N3439DCSM 2N3440DCSM 5 E IVI E LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2 .29 ± 0.20


    OCR Scan     		PDF 2N3439DCSM 2N3440DCSM 2N3439 2N3440

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


    OCR Scan     		PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    TEXAS 2N3439

    Abstract: pf30n 2n3439 TEXAS INSTRUMENTS 2N3439
    Text: TYPES 2N3439. 2N3440 N-P-N SILICON POWER TRANSISTORS HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS CO H C < r *o r m m Vi • Min V BR CEO ° f 350 V (2N3439) • Max VcE(sat) of 0.5 V at lc = 50 mA 5i • Min f j of 15 MHz at 10 V , 20 mA


    OCR Scan     		PDF 2N3439. 2N3440 2N3439) TEXAS 2N3439 pf30n 2n3439 TEXAS INSTRUMENTS 2N3439

    2N2201

    Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
    Text: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings


    OCR Scan     		PDF DDDQ133 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358

    TRANSISTOR BDX 286

    Abstract: 2N3439 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525
    Text: TYPES 2N3439, 2N3440 N-P-N SILICON POWER TRANSISTORS H IGH-VO LTAGE POWER TRA N SISTO RS DESIGN ED FO R IN D U STRIA L AND M ILIT A R Y APPLICATIONS • Min V B R CEO ° f 350 V (2N3439) • Max VcE(sat) ° f 0-5 V at lc = 50 mA • Min f j of 15 MHz at 10 V , 20 mA


    OCR Scan     		PDF 2N3439, 2N3440 2N3439) 2N3439 TRANSISTOR BDX 286 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525

    2N3439 COMPLEMENTARY

    Abstract: 2N3439 Transistor N3439 2N3440 N3439 2N3440 COMPLEMENTARY 2N5415
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSB'îBl DDEfllBfi DST M A P X 2N3439 2N3440 A SILICON NPN HIGH-VOLTAGE TRANSISTORS NPN high-voltage small-signal transistors in a TO-39 envelope and intended fo r use in telephony and professional communication equipment.


    OCR Scan     		PDF 2N3439 2N3440 2N5415/5416. N3439 N3440 2N3439 COMPLEMENTARY Transistor N3439 2N3440 2N3440 COMPLEMENTARY 2N5415

    2N3440 MOTOROLA

    Abstract: 2N5416 motorola 2n3439 motorola 2N3439 2N5415 MOTOROLA 2N3440 2N5415 2N6410 motorola 2n5416 transistor 2n3439
    Text: M A X IM U M RATIN G S IP Symbol Rating NF»N 2N3440 2NC41B 2N5416 2N3439 Collector-Emltter Voltage Vc e o 200 300 360 260 Vdc Collector-Base Voltage Vc b O 200 350 490 300 Vdc Emitter-Base Voltage Vebo 4.0 6.0 7.0 7.0 Vdc Baas Current Ib 0.5 Ade Collector Current —


    OCR Scan     		PDF 2NC41B 2N5416 2N3439 2N3440 2N3440 2N5415 2N5416 O-205AD) 2N3439, 2N3440 MOTOROLA 2N5416 motorola 2n3439 motorola 2N5415 MOTOROLA 2N6410 motorola 2n5416 transistor 2n3439