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    2SB1116 Search Results

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    2SB1116A-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    Micro Commercial Components 2SB1116-K-TP

    TRANS PNP 50V 1A SOT-23
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    Micro Commercial Components 2SB1116-U-TP

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    Micro Commercial Components 2SB1116-L-TP

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    2SB1116 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1116 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1116 NEC Original PDF
    2SB1116 NEC Semiconductor Selection Guide Original PDF
    2SB1116 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    2SB1116 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1116 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1116 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1116 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1116 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1116 Unknown Cross Reference Datasheet Scan PDF
    2SB1116 USHA Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. Scan PDF
    2SB1116A NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1116A NEC Original PDF
    2SB1116A NEC Semiconductor Selection Guide Original PDF
    2SB1116A Unknown Scan PDF
    2SB1116A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1116A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1116A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1116A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1116A Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SB1116 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose


    Original     		2SB1116, 2SD1616 2SB1116 2SB1116A PDF

    2SB1116A

    Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG
    Text: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base


    Original     		2SB1116A 2SD1616A 2SB1116A-L 2SB1116A-K 2SB1116A-U 21-Jan-2011 2SB1116A 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TO-92 TRANSISTOR PNP 1. EMITTER FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A -50mA PDF

    2SB1116

    Abstract: 2SB1116A
    Text: ST 2SB1116 / 2SB1116A PNP Silicon Epitaxial Planar Transistor Audio frequency power amplifier and medium speed switching. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g


    Original     		2SB1116 2SB1116A 2SB1116 2SB1116A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1616 TRANSISTOR NPN 1. EMITTER FEATURES z Low VCE(sat) z Complementary Transistor with The 2SB1116 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		2SD1616 2SB1116 100mA PDF

    2SB1116

    Abstract: 2SB1116A
    Text: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		2SB1116/A 2SD1616/A 2SB1116 2SB1116A PW10ms Cycle50% QW-R201-066 2SB1116 2SB1116A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION Complement to UTC 2SD1616/A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K


    Original     		2SB1116/A 2SD1616/A 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K 2SB1116L-x-T92-R 2SB1116G-x-T92-R 2SB1116AL-x-T92-B 2SB1116AG-x-T92-B PDF

    2SB1116

    Abstract: 2SD1616 2SD161
    Text: 2SB1116 -1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616 G H J CLASSIFICATION OF hFE 1


    Original     		2SB1116 2SD1616 2SB1116-L 2SB1116-K 2SB1116-U 21-Jan-2011 2SB1116 2SD1616 2SD161 PDF

    2SB1116

    Abstract: 2SB1116A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR PNP TO-92 FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A -50mA 2SB1116/2SB1116A 2SB1116 2SB1116A PDF

    2sb1116

    Abstract: 1116a
    Text: 2SB1116/1116A PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value VEBO Emitter-Base Voltage


    Original     		2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A 1116a PDF

    1116a

    Abstract: 1116 2SB1116
    Text: 2SB1116/2SB1116A PNP General Purpose Transistor COLLECTOR 2 P b Lead Pb -Free 3 BASE 1 2 1 EMITTER 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Symbol 1116 1116A Unit Collector-Base Voltage VCBO -60 -80 V Collector-Emitter Voltage VCEO -50


    Original     		2SB1116/2SB1116A 22-Jan-09 O-92OutlineDimensions 270TYP 1116a 1116 2SB1116 PDF

    2SB1116

    Abstract: 2SB1116A
    Text: ST 2SB1116 / 2SB1116A PNP Silicon Epitaxial Planar Transistor Audio frequency power amplifier and medium speed switching. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g


    Original     		2SB1116 2SB1116A 2SB1116 2SB1116A PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C


    Original     		2SB1116/A 2SD1616/A 2SB1116 2SB1116A 200ms QW-R201-066 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION Complement to UTC 2SD1616/A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free SOT-89 2SB1116G-x-AB3-B 2SB1116L-x-T92-B 2SB1116G-x-T92-B


    Original     		2SB1116/A 2SD1616/A OT-89 2SB1116G-x-AB3-B 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K 2SB1116AG-x-AB3-B PDF

    1116a

    Abstract: D1619 2SB1116 nec marking power amplifier 2sb1116a
    Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose


    Original     		2SB1116, 2SD1616 2SB1116 2SB1116A 1116a D1619 nec marking power amplifier 2sb1116a PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 PDF

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 PDF

    200A1

    Abstract: 2SB1116A
    Text: Transistors 2SB1116A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Coilector-Emitter Voltage VCE0 Emitter-Base Voltage Collector Current (DC) •Collector Current (Pulse)


    OCR Scan     		2SB1116A -55M50 100mA 200A1 2SB1116A PDF

    200A1

    Abstract: 2SB1116
    Text: Transistors 2SB1116 USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO -6 0 V Coilector-Emitter Voltage VCE0 -5 0 V -6 -1 -2 0.75 150 —5 5 M 5 0


    OCR Scan     		2SB1116 -55M50 100mA 200A1 2SB1116 PDF

    2SD1617

    Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
    Text: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60


    OCR Scan     		2SB1116 2SB1116A 2SB1119 T0126ML) 2SB1141 2SD1682 2SB1142 2SD1683 2SD1617 2sb111 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124 PDF

    2SB1116

    Abstract: 2SB1116A PA33
    Text: M F C " / PNP SILICON TRANSISTORS / DESCRIPTION 2S B 1116,2S B 1116A The 2SB1116/2SB1116A are designed for use in driver and output stages of AF amplifier, general purpose application. PACKAGE DIMENSIONS in millimeters F EATU R ES • Low Col Iector Satu ration Voltage.


    OCR Scan     		2SB1116A 2SB1116/2SB1116A 2SB1116/2SB1116A) 2SD1616/2SD1616A VCC--10 -10-I[ 2SB1116 2SB1116A PA33 PDF

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Text: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


    OCR Scan     		SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934 PDF