2SC2912 Search Results

2SC2912 Datasheets (16)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SC2912		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF
2SC2912		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
2SC2912		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
2SC2912		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF
2SC2912		Unknown	Cross Reference Datasheet		Scan	PDF
2SC2912		Unknown			Scan	PDF
2SC2912		Unknown	The Transistor Manual (Japanese) 1993		Scan	PDF
2SC2912		Unknown	Transistor Substitution Data Book 1993		Scan	PDF
2SC2912		Unknown	The Japanese Transistor Manual 1981		Scan	PDF
2SC2912		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SC2912		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
2SC2912		Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples		Scan	PDF
2SC2912		Sanyo Semiconductor	NPN Epitaxial Planar Silicon Transistor		Scan	PDF
2SC2912R		Sanyo Semiconductor	NPN/PNP Epitaxial Planar Silicon Transistor, High Voltage Switching, AF 150W Predriver Applications		Scan	PDF

2SC2912S		Sanyo Semiconductor	NPN/PNP Epitaxial Planar Silicon Transistor, High Voltage Switching, AF 150W Predriver Applications		Scan	PDF
2SC2912T		Sanyo Semiconductor	NPN/PNP Epitaxial Planar Silicon Transistor, High Voltage Switching, AF 150W Predriver Applications		Scan	PDF

2SC2912 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SC2912 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)140m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.250 h(FE) Max. Current gain.	Original	2SC2912 Freq150M StyleTO-126	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
2SA1281 Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267 Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400	Original	2SA1201 2SA1202 2SA1203 2SA1204 2SA1205 2SA1206 2SA1207 2SA1208 2SA1209 2SA1210 2SA1281 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878	PDF
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717	PDF
KT604 Abstract: 2SC627 KT604A BF3920 MPSA430 BF292 LOW-POWER SILICON NPN KT604B 2SC1048 bf355 Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 Manufacturer 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 30 30 30 30 30 30 30 30 30 35 4 40 40 40 40 40 40 40 40 40 MMBTA43 MPSA43 5MBTA43 ESM643 2N6430 MPS•A43 BF643	Original	2SC1921 2SC1573 2S0662 2S01869 2S02031 MST20S 2SC2885M 2Nl053 KT604 2SC627 KT604A BF3920 MPSA430 BF292 LOW-POWER SILICON NPN KT604B 2SC1048 bf355	PDF
2SA1210 Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536 Text: SANYO SEMICONDUCTOR CORP IE E D I 7 cH 7 0 7 b T - a - c n 2SC2912 NPN /pnp Epitaxial Planar Silicon Transistors 200 9A High Voltage Switching, AF 1 5 0 W Predriver Applications 2SA1210 780C Features • Adoption o f FBET process • High breakdown voltage	OCR Scan	2SC2912 707Li 2SA1210 Characteristics/H81 B1252 0DGB752 2SA1210 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536	PDF
2SA1210 Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage	OCR Scan	2SA1210 0DGB752 2SA1210 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor	PDF
b1181 Abstract: sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912 Text: SANYO SEMICONDUCTOR CORP 12E D I T - Q 1 - 3 7 * ^ 7 Q7b Q003775 0 l \ " 2SA1210 Epitaxial P la n a r S ilic o n T ra n sisto rs P N P/npn 2009A High Voltage S w itch in g , A F 1 5 0 W Predriver A p p lications 2SC2912 780C Features • A d o p tio n o f F B E T process	OCR Scan	2SA1210 B1181 B1252 sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912	PDF
2sc2238 Abstract: 2SD759 2sc1741 2SD401A 2SC1628 2SC1959 2SC2021 2SC1627 2SD1562B 2sc2275 Text: m Si € Type No. tt « = Manuf. * m NEC B i HITACHI ¡S ± ài FUJITSU ta t MATSUSHITA m h MITSUBISHI □ — A ROHM B ÌL 2SC2911 2SC1628 2SD1609 2SD 758 - l=F TOSHIBA CD SANYO 2SD 757 ^ 2SC2912 2SC1628 2SD1610 2SD 7 5 9 - B Si 2SC2344 2SC2238 2SD4Q1A 2SC1683	OCR Scan	2SD757 2SD758 2SD759 2SD760 2SC2911 2SC2912 2SC2344 2SD1459 2SC1628 2sc2238 2sc1741 2SD401A 2SC1959 2SC2021 2SC1627 2SD1562B 2sc2275	PDF
2sb504 Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ ; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1 n 3 St	OCR Scan	S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V	PDF
2SB415 Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~	OCR Scan	4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362	PDF
2SA1161 Abstract: TO-202MOD 2SA1198 2SA1209 2SA1156 2SA1160 2SA1163 2SA1173 2SA1182 2Sa1206 Text: - 24 - Ta=25cC f t f c Ê f ë <Ta=25‘ C . * E P ( Í T c = 2 5 ,C ) m £ ft ffl £ 2SA1156 HV HS PSW 2SA1160 iâ V c BO VcEO (V) (V) Ice DC) Pc Pc* (A) (W) (W) leßo (max) Iß Pi) v’ cB (V) ,hF E (max) (min) V cE Ic/ I e (V) (A) [*Ef][àtyp1ÎÉ] VcE(sat	OCR Scan	2SA1156 2SA1160 2SA1161 SA1162 2SA1163 SA1171 2SA1199 2SA1199S 2SC2880 2SA1200 TO-202MOD 2SA1198 2SA1209 2SA1160 2SA1163 2SA1173 2SA1182 2Sa1206	PDF

2SC3133 cross reference Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288 Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905	OCR Scan	2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288	PDF