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    2SB507 Search Results

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    2SB507 Price and Stock

    Rochester Electronics LLC 2SB507E

    TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB507E Bulk 641 641
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    • 1000 $0.47
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    Rochester Electronics LLC 2SB507D

    TRANSISTOR FOR AF POWER AMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB507D Bulk 634
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    onsemi 2SB507E

    Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SB507E 641 1
    • 1 $0.4778
    • 10 $0.4778
    • 100 $0.4491
    • 1000 $0.4061
    • 10000 $0.4061
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    onsemi 2SB507D

    2SB507 - Transistor for AF Power Amplifier '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SB507D 1,492 1
    • 1 $0.4778
    • 10 $0.4778
    • 100 $0.4491
    • 1000 $0.4061
    • 10000 $0.4061
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    SANYO Semiconductor Co Ltd 2SB507D

    2SB507 - Transistor for AF Power Amplifier '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SB507D 27,732 1
    • 1 $0.4778
    • 10 $0.4778
    • 100 $0.4491
    • 1000 $0.4061
    • 10000 $0.4061
    		Buy Now

    2SB507 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB507 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SB507 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB507 Mospec PNP Silicon Power Transistor Scan PDF
    2SB507 Mospec POWER TRANSISTORS(3.0A,60V,30W) Scan PDF
    2SB507 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB507 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB507 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB507 Unknown Scan PDF
    2SB507 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB507 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB507 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB507 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB507 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB507 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB507 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB507 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB507 Unknown Cross Reference Datasheet Scan PDF
    2SB507 Unknown Transistor Replacements Scan PDF
    2SB507 Sanyo Semiconductor Low Frequency Power Amp Applications Scan PDF
    2SB507 Sanyo Semiconductor General Purpose Transistors Scan PDF

    2SB507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB507

    Abstract: 2SD313
    Text: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier


    Original     		PDF 2SB507 O-220C 2SD313 O-220) 2SB507 2SD313

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313


    Original     		PDF O-220 2SB507 O-220 2SD313 -200mA -500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507


    Original     		PDF O-220 2SD313 O-220 2SB507 200mA 500mA

    2SD313

    Abstract: 2SB507 2sd313 equivalent 2SD313 E
    Text: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE


    Original     		PDF 2SD313 2SB507 O-220 06-Feb-07 O-220 2SD313 2SB507 2sd313 equivalent 2SD313 E

    2sd313 equivalent

    Abstract: 2SD313 2sd313 applications 2SB507
    Text: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier


    Original     		PDF 2SD313 O-220C 2SB507 2sd313 equivalent 2SD313 2sd313 applications 2SB507

    2SB507

    Abstract: 2sd313 equivalent 2SD313 TRANSISTOR 2SB507
    Text: PNP 2SB507 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD313 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25°c)


    Original     		PDF 2SB507 O-220 2SD313 2SB507 2sd313 equivalent 2SD313 TRANSISTOR 2SB507

    2SD313

    Abstract: 2sd313 equivalent 2SB507
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507


    Original     		PDF O-220 2SD313 O-220 2SB507 200mA 500mA 2SD313 2sd313 equivalent 2SB507

    TRANSISTOR 2SB507

    Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313


    Original     		PDF 2SB507 2SD313 TRANSISTOR 2SB507 TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313

    Untitled

    Abstract: No abstract text available
    Text: 2SB507E Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m


    Original     		PDF 2SB507E

    2S8834 NEC

    Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
    Text: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A


    Original     		PDF

    2SB507

    Abstract: 2SD389
    Text: 2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SD389 O-220 2SB507 2SB507 2SD389

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507


    Original     		PDF O-220 2SD313 O-220 2SB507 200mA 500mA

    TRANSISTOR 2SB507

    Abstract: 2SB507 2SD313
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313


    Original     		PDF O-220 2SB507 O-220 2SD313 -200mA -500mA TRANSISTOR 2SB507 2SB507 2SD313

    Untitled

    Abstract: No abstract text available
    Text: 2SD313 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features — 1 3 2 Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SD313 O-220 O-220 2SB507 200mA 500mA

    BC547 sot package sot-23

    Abstract: BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306
    Text: DC Components - Cross Reference Industry Type No. DC Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2N3906 TO-92 2SB857 2SB857 TO-220AB


    Original     		PDF 2N2955 2N3055 2SB1426 2SB507 O-220AB 2N3772 BC547 sot package sot-23 BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306

    2SD313

    Abstract: 2sd313 equivalent 2SB507 416W
    Text: SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier


    Original     		PDF 2SD313 O-220C 2SB507 2SD313 2sd313 equivalent 2SB507 416W

    2SB507

    Abstract: 2SD313 to25W 416W
    Text: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier


    Original     		PDF 2SB507 O-220C 2SD313 O-220) 2SB507 2SD313 to25W 416W

    2SA1015

    Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
    Text: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^


    OCR Scan     		PDF SA1015 2SA385 2SA715 2SB941 2SB1064 2SA1015 2SA673 2SA1015 2SA1358 2SA965 2SB1212 2SB560 2SA934 2SA985 NEC 2SA1096

    TRANSISTOR B507

    Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
    Text: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.


    OCR Scan     		PDF T-33-^ 2SB507, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SD314, TRANSISTOR B507 TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor

    Sanyo D313

    Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
    Text: SANYO SEMICONDUCTOR CORP 12 E D | 7Ti7D7Li 0004ÛÛ7 S | T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.


    OCR Scan     		PDF 2SB507, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SD314, Sanyo D313 transistor D313 TRANSISTOR B507 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier

    2SB 2045

    Abstract: 2SD313 B507D 2sd314 2sb507 sanyo b 507 2SB507
    Text: "SANYO SEMICONDUCTOR CORP 12E 2SB507, 508 D I 711707t 0003178 T'33' ? 2SD313, \ . 314 PNP/ npn Triple D iffu sed P lan a r 2012 201OA S ilic o n T ra n sisto rs Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.


    OCR Scan     		PDF 711707t 2SB507, 201OA 2SD313, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SB 2045 B507D 2sb507 sanyo b 507

    2SD313

    Abstract: 2SB507 transistor 2sd313
    Text: ÆàMOS PEC NPN SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEA TU RES: * Low Collector-Emitter Saturation Voltage VcE satf 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507


    OCR Scan     		PDF 2SB507 2SD313 2SD313 2SB507 transistor 2sd313

    2SB415

    Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
    Text: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596


    OCR Scan     		PDF 2sb507 2sb596 2sa1069 2sb856 2sb1291 2sb508 2sb632 2SB415 sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661

    2SA934

    Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
    Text: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54


    OCR Scan     		PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA934 2SA970 2sa933 2sa952 2sB1064 2SA720 2SA836