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    2SB938A Search Results

    2SB938A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB938A Panasonic Silicon PNP epitaxial planar type Darlington Original PDF
    2SB938A) Panasonic PNP Transistor Darlington Original PDF
    2SB938A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB938A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB938A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB938A Unknown Cross Reference Datasheet Scan PDF
    2SB938A Panasonic Si PNP epitaxial planar darlington. AF power amplifier. Scan PDF
    2SB938AP Panasonic Si PNP EPITAXIAL PLANAR Scan PDF
    2SB938AQ Panasonic Si PNP EPITAXIAL PLANAR Scan PDF
    2SB938AR Panasonic Si PNP EPITAXIAL PLANAR Scan PDF

    2SB938A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current


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    PDF 2SB0938, 2SB0938A 2SB938, 2SB938A) 2SD1261 2SD1261A 2SB0938 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


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    PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


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    PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 1.0±0.1 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V −80 −60 VCEO Emitter-base voltage (Collector open)


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    PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    SILICON COMPLEMENTARY transistors darlington

    Abstract: 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol


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    PDF 2SB0938 2SB938) 2SB0938A 2SB938A) SILICON COMPLEMENTARY transistors darlington 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB0938 2SB938 and 2SB0938A (2SB938A) • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


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    PDF 2SD1261, 2SD1261A 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


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    PDF 2SD1261, 2SD1261A 2SB938 2SB938A 2SD1261 2SB938A 2SD1261 2SD1261A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Unit VCBO −60 V 2 −80 Collector-emitter voltage 2SB0938


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    PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB938A –60 VCEO –80 10.0±0.3 V –5 V Peak collector current ICP –8 A Collector current


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    PDF 2SB938, 2SB938A 2SD1261 2SD1261A 2SB938 2SB938 2SB938A 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 2 (7.6) Collector-base voltage 1 Symbol 0 to 0.4


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    PDF 2SB0938 2SB938) 2SB0938A 2SB938A) 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


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    PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB938, 2SB938A 2SB938, 2SB938A P ackage Dim ensions U n it I mm Silicon PNP Epitaxial Planar Darlington Type 8.7 max. 6.5 max. Pow er A m plifier, Switching C om plem entary Pair with 2 S D 1 2 6 1 , 2 S D 1 2 6 1 A r— <6 i ▼ • Features


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    PDF 2SB938, 2SB938A 2SD1261, 2SD1261A 2SB938 2SB938A 2SD1261 2SD1261A

    2SB962

    Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
    Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»


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    PDF 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB947A 2SB951A 2SB952 2SB952A 2SB962 2SD1288 2SB941A 2SB942

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB938, 2SB938A 2SB938, 2SB938A P ackage Dim ensions U nit 1 mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. 1.1 max. 6.5 max! P ow er Am plifier, Switching C om plem entary Pair with 2 S D 1 2 6 1 , 2 S D 1 2 6 1 A • Features


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    PDF 2SB938, 2SB938A 2SB938 2SB938A

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB1013

    Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
    Text: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018


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    PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 1318J 2SB679

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    2SB902

    Abstract: 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099
    Text: PANASONIC INDL/ELEKiSEMI} 75C I> | b*i35flSM h^>S>7/9 6 | * 2SB902 2SB902 '> ij □ y P N P i l f ^ y y \s~7\s— - y i & / Si P N P Epitaxial Planar —iSiiiH iffl/G eneral Amplifier • 1# M /F e a tu r e s • x. I • 3 L- ? ? ■J)L i •■/ i't&fD'ffiffi VCK sat) A 'tlt'.'o/Low V ,h(SBl)


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    PDF flci31 2SB902 2SB902 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


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    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398