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    Toshiba America Electronic Components 2SB1018A-Y(F)

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    2SB1018 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1018 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1018 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1018 Unknown PNP Transistor Scan PDF
    2SB1018 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1018 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1018 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1018 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1018 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1018 Unknown Cross Reference Datasheet Scan PDF
    2SB1018 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1018 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1018 Toshiba Silicon PNP Triple Diffused Transistor Scan PDF
    2SB1018 Toshiba TO-220 Package Transistors Scan PDF
    2SB1018(A) Unknown Silicon PNP Transistor Scan PDF
    2SB1018A Unknown PNP transistor Scan PDF
    2SB1018A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1018A Toshiba Silicon PNP triple diffused type transistor for high current switching, power amplifier applications Scan PDF
    2SB1018A Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE(PCT PROCESS) Scan PDF
    2SB1018-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1018-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SB1018 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1018

    Abstract: 2SD1411
    Text: JMnic Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications


    Original     		PDF 2SB1018 O-220F 2SD1411 O-220F) 2SB1018 2SD1411

    2sb1018

    Abstract: 2SD1411 2sB101
    Text: Inchange Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications


    Original     		PDF 2SB1018 O-220F 2SD1411 O-220F) 2sb1018 2SD1411 2sB101

    D1411A

    Abstract: 2SB1018A 2SD1411A
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A

    B1018A

    Abstract: B1018 2SD1411A 2SB1018A
    Text: 2SB1018A 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB1018A 通 信 工 業 用 ○ 大電力スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = − 7 A • コレクタ飽和電圧が低い。


    Original     		PDF 2SB1018A 2SD1411A 2-10R1A 20070701-JA B1018A B1018 2SD1411A 2SB1018A

    2SB1018A

    Abstract: 2SD1411A
    Text: SavantIC Semiconductor Product Specification 2SB1018A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411A APPLICATIONS ·Power amplifier applications ·High current switching applications


    Original     		PDF 2SB1018A O-220F 2SD1411A O-220F) 2SB1018A 2SD1411A

    pnp 4A switching

    Abstract: 2SB1018 2SD1411
    Text: SavantIC Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING


    Original     		PDF 2SB1018 O-220Fa 2SD1411 O-220Fa) C100V; pnp 4A switching 2SB1018 2SD1411

    B1018a

    Abstract: b1018 2SB1018A 2SD1411A
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original     		PDF 2SB1018A 2SD1411A B1018a b1018 2SB1018A 2SD1411A

    D1411A

    Abstract: 2SD1411A 2SB1018A D1411
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD1411A 2SB1018A 2-10R1A D1411A 2SD1411A 2SB1018A D1411

    D1411A

    Abstract: No abstract text available
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD1411A 2SB1018A 2-10R1A D1411A

    B1018a

    Abstract: b1018 2SB1018A 2SD1411A
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original     		PDF 2SB1018A 2SD1411A B1018a b1018 2SB1018A 2SD1411A

    B1018A

    Abstract: B1018
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original     		PDF 2SB1018A 2SD1411A 2-10R1A B1018A B1018

    D1411A

    Abstract: 2SB1018A 2SD1411A
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A

    2SB1018A

    Abstract: 2SD1411A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.


    Original     		PDF 2SB1018A 2SD1411A -100V; 2SB1018A 2SD1411A

    2SD1411

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SD1411 2SB1018 2SD1411

    TE2555

    Abstract: 20AS 2SB1018A 2SD1411 2SD1411A
    Text: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 411 A HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • Low Saturation Voltage : V q ^ s a t “ 0.5V (Max.) at Iq = 4A Complementary to 2SB1018A M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD1411A 2SB1018A TE2555 20AS 2SD1411 2SD1411A

    2sb1018

    Abstract: tag c9 240
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1018 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1Q.3MAX. 03.g±ag FEATURES: . High Collector Current : Ic =-7A . Low Collector Saturation Voltage : vCE sat =-0-5v(Max-) at IC=-4A


    OCR Scan     		PDF 2SB1018 2SD1411 2sb1018 tag c9 240

    2SB1013

    Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
    Text: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018


    OCR Scan     		PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 1318J 2SB679

    2sd1411

    Abstract: No abstract text available
    Text: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .2 ± C t2 FEATURES: . Low Saturation Voltage : VcE sat =0-5V(Max.) :i± at IC=4A . Complementary to 2SB1018


    OCR Scan     		PDF 2SD1411 2SB1018 2sd1411

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 0 1 8A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • • • High Collector Current : Iq = —7A Low Collector Saturation Voltage


    OCR Scan     		PDF 2SB1018A 2SD1411A

    2SB1018

    Abstract: No abstract text available
    Text: V U zi > P N P = S f f i f ^ P C d J ï t 2SB1018 o^ Œ x f i ï X i ' If iI i : mm o 10.3M AX. ; ic = _ 7A =¡ U '/ ? ê â f f i ' S J ±  î i S : V '0 : V CE (sat) = - 0 .5 V ( f t * ) d c = - 4 A ) 2 S D 1 4 1 1 1 3 > 7 ‘ ') X > ? ') h zt¿ni t o


    OCR Scan     		PDF 2SB1018 2SD14111 2-10L1A -50mA, 2SB1018

    ze 003 ic

    Abstract: c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000
    Text: T O S H IB A 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 • High Collector Current : Ic = —7 A J •


    OCR Scan     		PDF 2SB1018A 2SD1411A ze 003 ic c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB1018A HIGH CURRENT SWITCHING APPLICATIONS PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm 10 + 0.3 —I High Collector Current : I q = —7A


    OCR Scan     		PDF 2SB1018A 2SD1411A

    ze 003 ic

    Abstract: 2SB1018A 2SD1411A cc 1029
    Text: TO SH IBA 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10 ±0.3 r • • • High Collector Current : Ic = —7 A Low Collector Saturation Voltage


    OCR Scan     		PDF 2SB1018A 2SD1411A ze 003 ic 2SB1018A 2SD1411A cc 1029

    2SA101S

    Abstract: 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1783 2SA1232 Toshiba 2SB754
    Text: - m « Type No. a € Manuf. s -E SANYO TOSHIBA 2SA 1124 fé T 2SA 1125 . të T 2SA 1127- fé T 2SA1783 2SA1015 2SA 1128 K T 2SB698 2SA562TM 2SA 1129 a a 2SB919 2SB1018 2SA 1133 „ fâ T 2SA1208 S ÍL HITACHI # ± ¡I FUJITSU T MATSUSHITA 2SB921L 2SA933LN


    OCR Scan     		PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA101S 2SA933LN 2SA970 2sa977 2SB927 2SA562TM 2SA914 2SA1232 Toshiba 2SB754