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    2SD1260 Search Results

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    2SD1260 Price and Stock

    JRH Electronics MTMM-105-02-S-D-126-009

    PIN HEADER, BOARD-TO-BOARD, 2 MM
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    DigiKey MTMM-105-02-S-D-126-009 Bulk 426 1
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    Samtec Inc MTMM-105-02-S-D-126-009

    CONN HEADER VERT 10POS 2MM
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    Mouser Electronics MTMM-105-02-S-D-126-009
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    Newark MTMM-105-02-S-D-126-009 Bulk 646 1
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    Powell Electronics MTMM-105-02-S-D-126-009 426 1
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    Master Electronics MTMM-105-02-S-D-126-009
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    Sager MTMM-105-02-S-D-126-009 646 1
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    Panasonic Electronic Components 2SD1260-P+

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    Bristol Electronics 2SD1260-P+ 77 3
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    Quest Components 2SD1260-P+ 61
    • 1 $2.5
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    2SD1260 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1260 Panasonic NPN Transistor Darlington Original PDF
    2SD1260 Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1260 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1260 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1260 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1260 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1260 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1260 Unknown Cross Reference Datasheet Scan PDF
    2SD1260A Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1260A Panasonic NPN Transistor Darlington Original PDF
    2SD1260A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1260A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1260A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1260A Unknown Cross Reference Datasheet Scan PDF
    2SD1260AP Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1260AQ Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1260AR Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1260P Panasonic Silicon NPN triple diffusion planar type Darlington Power Transistor Original PDF
    2SD1260P Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1260Q Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD1260 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)


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    PDF 2002/95/EC) 2SD1260, 2SD1260A 2SB0937, 2SB0937A 2SD1260 2SD1260 2SD1260A

    2SB937

    Abstract: 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Unit: mm VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C


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    PDF 2SD1260, 2SD1260A 2SB937 2SB937A 2SD1260 2SB937A 2SD1260 2SD1260A

    2SB0937

    Abstract: 2SB0937A 2SD1260 2SD1260A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 2SD1260 Symbol Rating Unit VCBO 60 V 2SD1260A 80 Collector-emitter voltage 2SD1260


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    PDF 2002/95/EC) 2SD1260, 2SD1260A 2SD1260 2SB0937 2SB0937A 2SD1260 2SD1260A

    TRANSISTOR 10003

    Abstract: 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SB0937, 2SB0937A 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB0937A 10.0±0.3 Unit: mm –60 V –80 Emitter to base voltage


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    PDF 2SB0937, 2SB0937A 2SB937, 2SB937A) 2SD1260 2SD1260A 2SB0937 TRANSISTOR 10003 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260A

    2SB937

    Abstract: 2SB937A 2SD1260 2SD1260A DSA003716
    Text: Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB937A –60 VCEO –80 10.0±0.3 Unit: mm V Emitter to base voltage VEBO –5


    Original
    PDF 2SB937, 2SB937A 2SD1260 2SD1260A 2SB937 2SB937 2SB937A 2SD1260A DSA003716

    2SD1260

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)


    Original
    PDF 2002/95/EC) 2SD1260, 2SD1260A 2SB0937, 2SB0937A 2SD1260 2SD1260 2SD1260A

    2SB0937

    Abstract: 2SB0937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 7.6 Parameter 1 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1


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    PDF 2SD1260, 2SD1260A 2SB0937, 2SB0937 2SB0937A 2SD1260 2SD1260A

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB0937 2SB937 and 2SB0937A (2SB937A) VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current


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    PDF 2SD1260, 2SD1260A 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SB0937 2SB937 , 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current


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    PDF 2SB0937 2SB937) 2SB0937A 2SB937A) 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


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    PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 2SB0937 Symbol Rating Unit VCBO −60 V −80 2SB0937A −60 Collector-emitter voltage 2SB0937


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    PDF 2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Rating Unit VCBO −60 V −80 2SB0937A Collector-emitter voltage 2SB0937 (Base open)


    Original
    PDF 2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260, 2SD1260A

    2SB937

    Abstract: 2SB937A 2SD12 2SD1260 2SD1260A SAL package panasonic 2SB
    Text: Power Transistors 2 S D 1 2 6 0 , 2SD1260, 2SD12Ó0A 2 S D 1 2 6 0 A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max l.lmax. 8.7 max. 6.5max. I* »I Power A m plifier C om plem enta ry Pair with 2SB937, 2SB 937A _n


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    PDF 2SD1260, 2SD1260A 2SD12 2SB937, 2SD1260 2SD1260A 2SB937 2SB937A SAL package panasonic 2SB

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1260, 2SD1260A 2SD1260, 2SD1260A Package Dimensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type • High DC current gain 3.7 max 8.7 max. Power Amplifier Complementary Pair with 2SB937, 2SB937A • Features U m ax. 6.5 max.


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    PDF 2SD1260, 2SD1260A 2SB937, 2SB937A 2SD1260 001bb4cJ

    4336

    Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
    Text: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329


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    PDF 2SC4324 2SC4325 2SC4326 2SC4327 2SC4328 2SC4329 2SC4330 2SC4095 2SC4871 2SC3142 4336 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847

    2SC3444

    Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
    Text: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4


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    PDF 2SD1586 2SD1587 2SD1588 2SD1589 2SD1590 2SD1592 2SD1593 25D1594 2SD1595 2SD1598 2SC3444 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1932 2sd1944

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


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    PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


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    PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    2sd2520

    Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
    Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP


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    PDF O-220 T0-220F T0-220E T0-220D 2SD1719 2SD1775/A 2SD1755 2SB1195 2SD1634 2SD1336/A 2sd2520 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755