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    Panasonic Electronic Components 2SC4655JCL

    RF TRANS NPN 20V 230MHZ SSMINI3
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    2SC4655 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4655 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC4655 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC4655 Panasonic NPN Transistor Original PDF
    2SC4655 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4655 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4655 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC4655 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4655 Panasonic Transistor Selection Guide Scan PDF
    2SC4655B Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4655C Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4655C Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4655J Panasonic Silicon NPN epitaxial planar type For high-frequency amplification Original PDF
    2SC4655JCL Panasonic RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 20VCEO 30MA SSMINI-3 Original PDF

    2SC4655 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4655J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0 to 0.02 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SC4655J 2SC4655J SC-89 PDF

    2SC4655J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 • Features Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SC4655J 2SC4655J SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification, oscillation, mixing, and IF of


    Original
    2002/95/EC) 2SC4655G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type For high-frequency amplification • Package • Optimum for RF amplification, oscillation, mixing, and IF of FM/SAM radios • SS-Mini type package, allowing downsizing of the equipment


    Original
    2002/95/EC) 2SC4655G PDF

    2SC4655

    Abstract: SC-75
    Text: Transistors 2SC4655 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)


    Original
    2SC4655 2SC4655 SC-75 PDF

    2SC4655J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0.12+0.03 –0.01 Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SC4655J SC-89 2SC4655J SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 • Features 1 (0.375)


    Original
    2002/95/EC) 2SC4655J PDF

    2SC4655

    Abstract: SC-75
    Text: Transistors 2SC4655 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Collector power dissipation


    Original
    2SC4655 2SC4655 SC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0 to 0.02 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SC4655J PDF

    2SC4655J

    Abstract: SC-89
    Text: Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0 to 0.02 Symbol Rating Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)


    Original
    2SC4655J 2SC4655J SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Optimum for RF amplification, oscillation, mixing, and IF of FM/SAM radios • SS-Mini type package, allowing downsizing of the equipment


    Original
    2002/95/EC) 2SC4655G PDF

    2SC4655

    Abstract: No abstract text available
    Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 3 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 0.75±0.15 5˚ (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage


    Original
    2SC4655 2SC4655 PDF

    2SC4655

    Abstract: SC-75
    Text: Transistors 2SC4655 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 1˚ 3 2 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)


    Original
    2SC4655 2SC4655 SC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification, oscillation, mixing, and IF of


    Original
    2002/95/EC) 2SC4655G PDF

    2SC4655

    Abstract: No abstract text available
    Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment


    Original
    2SC4655 45MHz 2SC4655 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan
    2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency am plification U n it: m m 1.6+0.15 0.4 0.8+0.1 0.4 • Features • Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment


    OCR Scan
    2SC4655 PDF

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan
    2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398 PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan
    125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF