Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) 5˚
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2002/95/EC)
2SC4627J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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2SC4627G
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marking UD
Abstract: 2SC4627
Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SC4627
100MHz
marking UD
2SC4627
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2SC4627J
Abstract: SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03
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2SC4627J
2SC4627J
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2SC4627
Abstract: SC-89
Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage
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2SC4627
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open)
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2SC4627
Abstract: SC-75
Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 0.4 Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20
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2SC4627
Abstract: SC-75
Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Collector power dissipation
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2SC4627
2SC4627
SC-75
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2SC4627G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT • SS-Mini type package, allowing downsizing of the equipment and
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2SC4627G
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2SC4627J
Abstract: No abstract text available
Text: Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment
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2SC4627
Abstract: No abstract text available
Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage
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2SC4627
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2SC4627J
Abstract: SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) 5˚
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2SC4627J
SC-89
2SC4627J
SC-89
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)
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2SC4627J
Abstract: SC-89
Text: Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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SC-89
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SC-89
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2SC4627G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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2002/95/EC)
2SC4627G
2SC4627G
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Panasonic Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency am plification U nit: mm • Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment
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OCR Scan
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2SC4627J
200MHz
100MHz
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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OCR Scan
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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2SC4614
Abstract: 2SC4636 2SC4642 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632
Text: - 210 - *0 31 2SC4626 2SC4627 2SC4628 2SC4629 M M Ta=25'C, *E¡]/ÍTc=25cC ^ EB tt S n~l & Vc b o Vc e o (V) (V) Crne) T (A) Pc Pc* IcBO (W) (W) (juA) 0.03 0.125 30 20 20 0.015 0.125 20 20 0. 02 15 9 föT HF A 30 Hi Hi HF A HF A UHFAHF A (max) (rain) Vc b
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OCR Scan
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2SC4626
2SC4627
2SC4628
2SC4629
2SC4630
2SC4631
2SC4632
2SC4633
2SC4650
2SC4655
2SC4614
2SC4636
2SC4642
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Untitled
Abstract: No abstract text available
Text: Panasonic Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency am plification • U nit: mm 0.4 Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment
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OCR Scan
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2SC4627
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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OCR Scan
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2SC4627
2SC5021
-2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
2SD2345
D1274A
B1317
C4714
D1707
b1108
c2258 transistor
D2052 transistor
transistor b1154
2sD2504 transistor
B1398
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