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    22N50 Search Results

    22N50 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    R5F61622N50FPV Renesas Electronics Corporation Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    R5F61622N50LGV Renesas Electronics Corporation Microcontrollers with 32-bit CISC CPU for System Control Applications (Non Promotion), TFLGA, /Tray Visit Renesas Electronics Corporation
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    22N50 Price and Stock

    TTM Technologies BD1722N5050AHF

    BALUN 1.7GHZ-2.2GHZ 50/50 0404
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    DigiKey BD1722N5050AHF Reel 8,000 4,000
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    BD1722N5050AHF Cut Tape 3,113 1
    • 1 $0.86
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    • 100 $0.4593
    • 1000 $0.29189
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    Richardson RFPD BD1722N5050AHF 4,000
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    • 10000 $0.45
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    BD1722N5050AHF 1,301 1
    • 1 $0.6
    • 10 $0.55
    • 100 $0.45
    • 1000 $0.4
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    Vishay Siliconix IRFP22N50APBF

    MOSFET N-CH 500V 22A TO247-3
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    DigiKey IRFP22N50APBF Tube 1,791 1
    • 1 $5.27
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    • 100 $3.5767
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    New Advantage Corporation IRFP22N50APBF 5,225 1
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    Littelfuse Inc IXFH22N50P

    MOSFET N-CH 500V 22A TO247AD
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    DigiKey IXFH22N50P Tube 290 1
    • 1 $6.12
    • 10 $6.12
    • 100 $4.886
    • 1000 $3.85733
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    Littelfuse Inc IXTQ22N50P

    MOSFET N-CH 500V 22A TO3P
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    DigiKey IXTQ22N50P Tube 257 1
    • 1 $6.06
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    • 100 $4.80033
    • 1000 $3.65733
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    Rochester Sensors TLL122-N500

    SENSOR LEVEL SWITCH VERT
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    DigiKey TLL122-N500 Box 12 1
    • 1 $74.57
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    • 100 $42.63
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    Find more 22N50 price and stock on Findchips.com

    22N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    22N50P

    Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
    Text: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 22N50P 22N50PS O-247 PLUS220 IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P

    ixtq-22n50p

    Abstract: 22N50P IXTQ 22N50P PLUS220SMD 22N50 C5237 8V45
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 22N50P 22N50PS PLUS220 405B2 22N50PS ixtq-22n50p 22N50P IXTQ 22N50P PLUS220SMD 22N50 C5237 8V45

    22N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXFH 22N50P VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25 IDM


    Original     		PDF 22N50P O-247 O-247 260Gate 405B2 22N50P

    22N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 22N50P 22N50PS PLUS220 PLUS220SMD 405B2 22N50PS 22N50P

    22N50P

    Abstract: PLUS220SMD
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 22N50P IXFV 22N50P IXFV 22N50PS VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 22N50P 22N50PS O-247 PLUS220 405B2 22N50P PLUS220SMD

    22N50P

    Abstract: 22N50 22N50PS C2230 PLUS220SMD
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 22N50P IXFV 22N50P IXFV 22N50PS = 500 V = 22 A ≤ 270 mΩ Ω ≤ 200 ns VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 22N50P 22N50PS O-247 22N50P 22N50 22N50PS C2230 PLUS220SMD

    RAS 0510 SUN HOLD

    Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
    Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.


    Original     		PDF mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03

    Untitled

    Abstract: No abstract text available
    Text: Product Brochure VNA Master Handheld Vector Network Analyzer + Spectrum Analyzer MS2026C MS2027C MS2028C 5 kHz to 6 GHz 5 kHz to 15 GHz 5 kHz to 20 GHz Vector Network Analyzer MS2036C MS2037C MS2038C 5 kHz to 6 GHz 9 kHz to 9 GHz 5 kHz to 15 GHz 9 kHz to 15 GHz


    Original     		PDF MS2026C MS2027C MS2028C MS2036C MS2037C MS2038C MS202xC/3xC

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet PIM Master MW82119B Passive Intermodulation Analyzer with Site Master™ Cable & Antenna Analyzer Option Introduction Anritsu introduces the first fully integrated Passive Intermodulation PIM Analyzer plus Cable and Antenna Analyzer (Option 331) suitable for


    Original     		PDF MW82119B MW82119B

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet Site Master Handheld Cable & Antenna Analyzer Featuring Classic and Advanced Modes S331L 2.0 MHz to 4.0 GHz Cable & Antenna Analyzer 50 MHz to 4.0 GHz Power Meter Introduction Anritsu introduces its ninth generation, compact handheld Cable & Antenna Analyzer for installation and maintenance


    Original     		PDF S331L S331D-like S331E-like S331L

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet BTS Master High Performance Handheld Base Station Analyzer MT8221B MT8222B 400 MHz to 4.0 GHz 150 kHz to 7.1 GHz 10 MHz to 7.1 GHz 400 MHz to 6.0 GHz 150 kHz to 7.1 GHz 10 MHz to 7.1 GHz Cable and Antenna Analyzer Spectrum Analyzer


    Original     		PDF MT8221B MT8222B MT8221B, MT8222B

    CRT - TCL COLOUR TV SCHEMATIC DIAGRAM

    Abstract: MATSUA compressor catalogue Riyadh Cables Catalogue PD 18N50 equivalent MATSUSHITA compressor catalogue CRT TCL COLOUR TV SCHEMATIC DIAGRAM Anritsu ML524B operation manual ML2430 CRT - tcl 29" COLOUR TV SCHEMATIC DIAGRAM Anritsu MG442A
    Text: CONTENTS Outline of Anritsu Corporation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 How to Use This Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Sales, Shipping, and Service Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet Site Master Compact Handheld Cable & Antenna Analyzer with Spectrum Analyzer S331E S332E S361E S362E 2 MHz to 4 GHz 2 MHz to 4 GHz 9 kHz to 4 GHz 2 MHz to 6 GHz 2 MHz to 6 GHz 9 kHz to 6 GHz Cable & Antenna Analyzer Spectrum Analyzer


    Original     		PDF S331E S332E S361E S362E S331E, S332E, S361E, S362E

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    96527

    Abstract: e5200
    Text: DIXYS Light Speed IGBT IXGH 22N50C VCES IC 25 V CE(sat)typ ^fi(typ) 500 V 44 A 2.1 V 55 ns P relim inary data sheet Symbol Test Conditions T j = 25cC to150JC T j = 2 5 °C to 1 5 0 °C ;R G Maximum Ratings 1 Mn Continuous Transient ^CM Tc =25°C T c = 90° C


    OCR Scan     		PDF 22N50C to150JC O-247AD 125cC, O-247 96527 e5200

    ix6h

    Abstract: No abstract text available
    Text: PIXYS Hi Per FAST IGBT with Diode IXGH 22N50BU1 CES *C<25 VCE sat)typ ^fi(typ) 500 V 44 A 2.1 V 55 ns Preliminary data Symbol Test Conditions VCES v CGR ^ = 25° C to 150° C T, = 25° C to 150° C; RGE= 1 MQ 500 500 V V VGES v GEM Continuous T ransient


    OCR Scan     		PDF 22N50BU1 O-247 ix6h

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode VCES I 22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30


    OCR Scan     		PDF IXGH22N50BU1 22N50BU B2-13 22N50BU1 22NS0BU1S ----------------TVJ-125

    Untitled

    Abstract: No abstract text available
    Text: BIXYS HiPerFAST IGBT IXGH 22N50B V CES IC 25 V CE(sat)typ t fi(typ) 500 V 44 A 2.1 V 55 ns P relim inary data Maximum Ratings Symbol Test Conditions V CES v CGR T, =25°C to 150°C T J, = 25° C to 150° C; F UCar. = 1 M fi 500 500 V V VGES v GEM Continuous


    OCR Scan     		PDF 22N50B O-247AD JEDECTO-247 22N50BU1

    2QN60

    Abstract: ixgh 1500
    Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH


    OCR Scan     		PDF T0-220AB^ 12N100U1 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 2QN60BU1 2QN60 ixgh 1500

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    SMD diode b24

    Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
    Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64


    OCR Scan     		PDF 12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B