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    41N60 Search Results

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    41N60 Price and Stock

    onsemi FCH041N60F

    MOSFET N-CH 600V 76A TO247-3
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    DigiKey FCH041N60F Tube 685 1
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    Avnet Americas FCH041N60F Tube 70 16 Weeks 30
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    Mouser Electronics FCH041N60F 780
    • 1 $13.32
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    Newark FCH041N60F Bulk 1,792 1
    • 1 $14.74
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    TME FCH041N60F 1
    • 1 $12.34
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    NexGen Digital FCH041N60F 4
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    Richardson RFPD FCH041N60F 450
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    EBV Elektronik FCH041N60F 480 16 Weeks 30
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    IXYS Corporation IXGH41N60

    IGBT 600V 76A 200W TO247AD
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    onsemi PCFC041N60EW

    MOSFET N-CH SMD
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    NXP Semiconductors N74F241N,602

    IC BUFFER NON-INVERT 5.5V 20DIP
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    NXP Semiconductors N74F541N,602

    IC BUFFER NON-INVERT 5.5V 20DIP
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    Rochester Electronics N74F541N,602 2,088 1
    • 1 $1.13
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    41N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT IXGH 41N60 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 76 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA


    Original     		PDF 41N60 O-247

    servo motors

    Abstract: robot control MJ800
    Text: Ultra-Low VCE sat IGBT IXGH 41N60 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 76 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA


    Original     		PDF 41N60 O-247 servo motors robot control MJ800

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Ultra-Low VCE sat IGBT IXGH 41N60 V CES ^C25 V CE(sat) = 600 V = 76 A = 1.6V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V v GES Continuous ±20 V v GEM Transient


    OCR Scan     		PDF 41N60 O-247

    Untitled

    Abstract: No abstract text available
    Text: riTvv<v Ultra-Low VCE sat IGBT IXGH 41N60 V CES ^C25 V CE(sat) = 600 V = 76 A = 1.6 V Preliminary data Symbol Maximum Ratings Test Conditions v C ES Tj = 25°C to 150°C 600 V VC G R Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGES Continuous +20 V v GEM Transient


    OCR Scan     		PDF 41N60 O-247

    Untitled

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT IXGH 41N60 VCES = 600 V •c25 = 76 A VcE(Sa„ = 1.6 V Preliminary data Symbol Test C onditions Maximum Ratings V CES L = 25°C to150°C 600 V V COR T J = 25° C to 150° C; RGg = 1 MD 600 V VQES Continuous ±20 V V gem Transient ±30


    OCR Scan     		PDF 41N60 to150 O-247

    ixysmosfets

    Abstract: No abstract text available
    Text: DIXYS Ultra-Low VCE sat IGBT vCES 41N60 •c25 ^ C E (s a t) = 600 V = 76 A = 1.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGft Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGEg Continuous ±20 V VGEM Transient


    OCR Scan     		PDF IXGH41N60 O-247 ixysmosfets

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50