FR 11P
Abstract: No abstract text available
Text: 107-68459 Packaging Specification 02Nov09 Rev G1 TAB ASSY SMT-TYPE WITH EMBOSS TAPE PACKAGE 1. PURPOSE 目的 Define the packaging specifiction and packaging method of TAB ASSY SMT-TYPE WITH EMBOSS TAPE PACKAGE. 订定 TAB ASSY SMT-TYPE WITH EMBOSS TAPE PACKAGE 产品之包装规格及包装方式。
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02Nov09
X-1674976-X
X-1717100-X
64MR/
912091at
QR-ME-030B
FR 11P
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Si3853DV
Abstract: Si3853DV-T1-E3 Si3853DV-T1-GE3
Text: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus
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Si3853DV
2002/95/EC
Si3853DV-T1-E3
Si3853DV-T1-GE3
18-Jul-08
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SiA425EDJ
Abstract: bmx - 01 SiA425EDJ-T1-GE3
Text: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21
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SiA425EDJ
SC-70
2002/95/EC
SC-70-6L-Single
18-Jul-08
bmx - 01
SiA425EDJ-T1-GE3
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Si3951DV-T1-GE3
Abstract: Si3951DV Si3951DV-T1-E3
Text: Si3951DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.7 0.205 at VGS = - 2.5 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3951DV
2002/95/EC
Si3951DV-T1-E3
Si3951DV-T1-GE3
18-Jul-08
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Si4487DY-T1-GE3
Abstract: si4487 65473
Text: New Product Si4487DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4487DY
2002/95/EC
Si4487DY-T1-GE3
18-Jul-08
si4487
65473
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Si3451DV-T1-E3
Abstract: 80pf55 Si3451
Text: Si3451DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.8 0.205 at VGS = - 2.5 V - 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3451DV
2002/95/EC
Si3451DV-T1-E3
Si3451DV-T1-GE3
18-Jul-08
80pf55
Si3451
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Si3865BDV-T1-E3 marking
Abstract: Si3865BDV Si3865BDV top marking Si3865BDV-T1-E3 Si3865 si3865bdv-t1-ge3
Text: Si3865BDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V RDS(on) (Ω) ID (A) 0.060 at VIN = 4.5 V 2.9 1.8 to 8 0.100 at VIN = 2.5 V 2.2 0.175 at VIN = 1.8 V 1.7 DESCRIPTION The Si3865BDV includes a p- and n-channel MOSFET in a
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Si3865BDV
61249-2lectual
18-Jul-08
Si3865BDV-T1-E3 marking
Si3865BDV top marking
Si3865BDV-T1-E3
Si3865
si3865bdv-t1-ge3
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Si3441BDV
Abstract: Si3441BDV-T1-E3 Si3441BDV-T1-GE3
Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si3441BDV
2002/95/EC
Si3441BDV-T1-E3
Si3441BDV-T1-GE3
18-Jul-08
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Si3909DV
Abstract: No abstract text available
Text: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition
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Si3909DV
2002/95/EC
Si3909DV-T1-E3
Si3909DV-T1-GE3
18-Jul-08
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Si3483DV-T1-E3
Abstract: Si3483DV Si3483DV-T1-GE3
Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 6.2 0.053 at VGS = - 4.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3483DV
2002/95/EC
Si3483DV-T1-E3
Si3483DV-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET
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Si3879DV
2002/95/EC
Si3879DV-T1-E3
Si3879DV-T1l
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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65525
Abstract: No abstract text available
Text: New Product SiZ702DT Vishay Siliconix N-Channel 30-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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SiZ702DT
2002/95/EC
18-Jul-08
65525
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IEC61249-2-21
Abstract: Si3973DV Si3973DV-T1-E3
Text: Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.087 at VGS = - 4.5 V - 2.7 - 12 0.120 at VGS = - 2.5 V - 2.3 0.165 at VGS = - 1.8 V - 1.5 • Halogen free According to IEC61249-2-21 Definition
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Si3973DV
IEC61249-2-21
2002/95/EC
Si3973DV-T1-E3
Si3973DV-T1-GE3
18-Jul-08
IEC61249-2-21
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Untitled
Abstract: No abstract text available
Text: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus
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Si3853DV
2002/95/EC
Si3853DV-T1-E3
Si3853DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si3911
Abstract: SI3911DV
Text: Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.145 at VGS = - 4.5 V - 2.2 - 20 0.200 at VGS = - 2.5 V - 1.8 0.300 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition
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Si3911DV
2002/95/EC
Si3911DV-T1-E3
Si3911DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Si3911
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SI3900DV
Abstract: No abstract text available
Text: Si3900DV Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3900DV
2002/95/EC
Si3900DV-T1-E3
Si3900DV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus
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Si3853DV
2002/95/EC
Si3853DV-T1-E3
Si3853DV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si3481DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.048 at VGS = - 10 V - 5.3 0.079 at VGS = - 4.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3481DV
2002/95/EC
Si3481DV-T1-E3
Si3481DV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition
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Si3493DV
2002/95/EC
Si3493DV-T1-E3
Si3493DV-T1-GE3
93xxx
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si3451DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.8 0.205 at VGS = - 2.5 V - 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3451DV
2002/95/EC
Si3451DV-T1-E3
Si3451DV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI3981DV
Abstract: No abstract text available
Text: Si3981DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.185 at VGS = - 4.5 V - 1.9 - 20 0.260 at VGS = - 2.5 V - 1.6 0.385 at VGS = - 1.8 V - 0.7 • Halogen-free According to IEC 61249-2-21 Definition
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Si3981DV
2002/95/EC
Si3981DV-T1-E3
Si3981DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E VIS IO N S O' 2 54 [.100] DI A 3 PLC 10JU N 05 JDP AMS REVISED PER E C 0 - 0 9 - 0 2 4 6 0 6 02NOV09 KK AEG MATERIAL:
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0S12-0034-05
EC0-09-024606
10JUN05
02NOV09
31MAR2000
06JUL05
us049721
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F200
Abstract: No abstract text available
Text: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 5 4 2 3 P U B L IC A T IO N R IG H T S LOC C O R P O R A TIO N . 2.54 [. 1 O O ] R E V I S I ON S DI A 3 RELEASE PER EC 0 S 1 2 - 0 0 3 4 - 0 5
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0S12-0034-05
EC0-09-024606
10JUN05
02NOV09
31MAR2000
06JUL05
us049721
F200
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931AM
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION 0 RELEASE 01 REVISED HO U S IN G MATERIAL: T H E R M O P L A S T IC . DATE PE REC 0S12 - 0 0 3 4 - 0 5
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0S12-0034-05
EC0-09-024606
10JUN05
02NOV09
31MAR2000
31AUG05
us049721
931AM
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