Untitled
Abstract: No abstract text available
Text: TWX, TWXF www.vishay.com Vishay Draloric Watercooled RF Power Pot Capacitors External Cooling System FEATURES • High voltage, current, and power ratings • Compact design reduces terminal self inductance and permit operation up to higher frequencies • These pot capacitors feature increased density through
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SI9979DS
Abstract: No abstract text available
Text: End of Life. Last Available Purchase Date is 31-Dec-2014 Si9979 Vishay Siliconix 3-Phase Brushless DC Motor Controller FEATURES Hall-Effect Commutation 60 or 120 Sensor Spacing Integral High-Side Drive for all N-Channel MOSFET Bridges PWM Input Quadrature Selection
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31-Dec-2014
Si9979
Si9979
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SI9979DS
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PDF
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Untitled
Abstract: No abstract text available
Text: SiR664DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0060 at VGS = 10 V 60a 0.0075 at VGS = 6 V 60a 0.0095 at VGS = 4.5 V 54 60 Qg (Typ.) 12 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switching
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SiR664DP
SiR664DP-T1-GEelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated
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Si1012CR
SC-75A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification
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SiRA00DP
SiRA00DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7186DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 80 0.0125 at VGS = 10 V 32g a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance www.vishay.com/doc?99912
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Si7186DP
Si7186DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET
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SiRA34DP
SiRA34DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA462DJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.018 at VGS = 10 V 12 0.020 at VGS = 6 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 5 nC • TrenchFET Power MOSFET • 100 % Rg Tested
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SiA462DJ
SC-70-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)
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IRFR020,
IRFU020,
SiHFR020
SiHFU020
O-252)
O-251)
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
SiRA02DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC
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SiRA14DP
SiRA14DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area
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SiA400EDJ
SC-70
SC-70-6L-Single
SiA400EDJ-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology FEATURES • Package type: Surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified
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VSMY1940X01
AEC-Q101
J-STD-020
VSMY1940X01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VSKD71., VSKE71., VSKJ71., VSKC71. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Standard Diodes, 80 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996
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VSKD71.
VSKE71.
VSKJ71.
VSKC71.
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)
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SiS407ADN
SiS407ADN-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: ST173CPBF Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 330 A FEATURES • • • • • • • • • TO-200AB (A-PUK) PRODUCT SUMMARY Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt
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ST173CPBF
O-200AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: GUR5H60, GURF5H60 & GURB5H60 Vishay General Semiconductor Ultrafast Rectifier FEATURES ITO-220AC TO-220AC • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability 2 2 1 1 GUR5H60
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GUR5H60,
GURF5H60
GURB5H60
ITO-220AC
O-220AC
GUR5H60
O-220AC
ITO-220AC
O-263AB
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Untitled
Abstract: No abstract text available
Text: TSOP773.W, TSOP775.W www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • • • • • • • • • • Continuous data transmission possible Very low supply current Photo detector and preamplifier in one package
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TSOP773.
TSOP775.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition
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Si5858DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5415EDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () (Max.) ID (A)a 0.0098 at VGS = - 4.5 V - 25 0.0114 at VGS = - 3.7 V - 25 0.0143 at VGS = - 2.5 V - 25 0.0250 at VGS = - 1.8 V -7 Qg (Typ.)
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Si5415EDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: B120 thru B160 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop
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J-STD-020,
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-UFB280FA20 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C
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VS-UFB280FA20
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: DG2015 Vishay Siliconix Low-Voltage, Low RON, Dual DPDT Analog Switch DESCRIPTION FEATURES The DG2015 is a dual double-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed, low on-resistance and small physical size, the
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DG2015
DG2015
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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