IEC61249-2-21
Abstract: Si3973DV Si3973DV-T1-E3
Text: Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.087 at VGS = - 4.5 V - 2.7 - 12 0.120 at VGS = - 2.5 V - 2.3 0.165 at VGS = - 1.8 V - 1.5 • Halogen free According to IEC61249-2-21 Definition
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Si3973DV
IEC61249-2-21
2002/95/EC
Si3973DV-T1-E3
Si3973DV-T1-GE3
18-Jul-08
IEC61249-2-21
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40575
Abstract: Si3973DV Si3973DV-T1
Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS
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Si3973DV
Si3973DV-T1--E3
S-40575--Rev.
29-Mar-04
40575
Si3973DV-T1
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410561
Abstract: 3919 74993 AN609 Si3973DV
Text: Si3973DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3973DV
AN609
13-Mar-07
410561
3919
74993
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Untitled
Abstract: No abstract text available
Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable
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Si3973DV
Si3973DV-T1
S-31670--Rev.
11-Aug-03
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72442
Abstract: Si3973DV
Text: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3973DV
19-Aug-03
72442
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Untitled
Abstract: No abstract text available
Text: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable
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Si3973DV
Si3973DV-T1
S-32037--Rev.
13-Oct-03
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Untitled
Abstract: No abstract text available
Text: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS
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Si3973DV
Si3973DV-T1--E3
S-32412--Rev.
24-Nov-03
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Si3973DV
Abstract: 72442
Text: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3973DV
18-Jul-08
72442
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Untitled
Abstract: No abstract text available
Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS
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Si3973DV
Si3973DV-T1--E3
08-Apr-05
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Si3973DV
Abstract: Si3973DV-T1
Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS
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Si3973DV
Si3973DV-T1--E3
18-Jul-08
Si3973DV-T1
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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