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Vishay Siliconix SIA425EDJ-T1-GE3 MOSFET P-CH 20V 4.5A PPAK SC70-6
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Vishay Intertechnologies SIA425EDJ-T1-GE3
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SIA425EDJ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
SIA425EDJ-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A SC-70-6		Original	PDF

SIA425EDJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SiA425EDJ Abstract: bmx - 01 SiA425EDJ-T1-GE3 Text: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21	Original	PDF	SiA425EDJ SC-70 2002/95/EC SC-70-6L-Single 18-Jul-08 bmx - 01 SiA425EDJ-T1-GE3
Untitled Abstract: No abstract text available Text: SPICE Device Model SiA425EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiA425EDJ 18-Jul-08
9934 Abstract: AN609 Text: SiA425EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SiA425EDJ AN609, 10-Nov-09 9934 AN609
Untitled Abstract: No abstract text available Text: SiA425EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.5a 0.065 at VGS = - 3.6 V - 4.5a 0.080 at VGS = - 2.5 V - 4.5a 0.120 at VGS = - 1.8 V -2 • Halogen-free According to IEC 61249-2-21	Original	PDF	SiA425EDJ SC-70 2002/95/EC 18-Jul-08
NX3008 Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N Text: Advanced cross reference list DFN* MOSFETs DFN: discrete flat no-leads in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1	Original	PDF	AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N
SiA427DJ Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	PDF	SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836