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    SI3441BDV Search Results

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    SI3441BDV Price and Stock

    Vishay Siliconix SI3441BDV-T1-E3

    MOSFET P-CH 20V 2.45A 6TSOP
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    DigiKey SI3441BDV-T1-E3 Reel
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    SI3441BDV-T1-E3 Cut Tape
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    SI3441BDV-T1-E3 Digi-Reel 1
    • 1 $0.42
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    RS SI3441BDV-T1-E3 Bulk 3,000
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    Bristol Electronics SI3441BDV-T1-E3 245 7
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    Quest Components SI3441BDV-T1-E3 196
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    Vishay Siliconix SI3441BDV-T1-GE3

    MOSFET P-CH 20V 2.45A 6TSOP
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    DigiKey SI3441BDV-T1-GE3 Reel
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    Vishay BLH SI3441BDV-T1-E3

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    Bristol Electronics SI3441BDV-T1-E3 2,895 7
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    Vishay Intertechnologies SI3441BDV-T1-E3

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.45A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components SI3441BDV-T1-E3 2,316
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    Vishay Intertechnologies SI3441BDVT1E3

    P-CHANNEL 2.5-V (G-S) MOSFET Small Signal Field-Effect Transistor, 2.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI3441BDVT1E3 2,450
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    SI3441BDV Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3441BDV Vishay Siliconix MOSFETs Original PDF
    SI3441BDV Vishay Telefunken P-channel 2.5-v (g-s) Mosfet Original PDF
    Si3441BDV SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI3441BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.45A 6-TSOP Original PDF
    SI3441BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.45A 6-TSOP Original PDF

    SI3441BDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3441BDV

    Abstract: Si3441BDV-T1-E3 Si3441BDV-T1-GE3
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 18-Jul-08

    SI3441DV-T1

    Abstract: Si3441DV TR55 SI3441BDV-T1-E3 Si3441BDV Si3441BDV-T1
    Text: Specification Comparison Vishay Siliconix Si3441BDV vs. Si3441DV Description: P-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3441BDV-T1 Replaces Si3441DV-T1 Si3441BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3441DV-T1


    Original     		PDF Si3441BDV Si3441DV Si3441BDV-T1 Si3441DV-T1 Si3441BDV-T1-E3 06-Nov-06 TR55

    Si3441BDV

    Abstract: Si3441BDV-T1
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1


    Original     		PDF Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 S-40424--Rev. 15-Mar-04

    Si3441BDV-T1-E3

    Abstract: Si3441BDV Si3441BDV-T1-GE3
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 11-Mar-11

    Si3441BDV SPICE Device Model

    Abstract: Si3441BDV
    Text: SPICE Device Model Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3441BDV 18-Jul-08 Si3441BDV SPICE Device Model

    Si3441BDV

    Abstract: No abstract text available
    Text: Si3441BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.090 @ VGS = - 4.5 V - 2.9 0.130 @ VGS = - 2.5 V - 2.45 - 20 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3441BDV S-03669--Rev. 07-Apr-03

    Si3441BDV

    Abstract: Si3441BDV-T1
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1


    Original     		PDF Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 08-Apr-05

    Si3441BDV

    Abstract: p-channel 2.5v g-s mosfet
    Text: SPICE Device Model Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3441BDV 14-Mar-03 p-channel 2.5v g-s mosfet

    s21127

    Abstract: SI3441BDV
    Text: Si3441BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.090 @ VGS = -4.5 V -2.9 0.130 @ VGS = -2.5 V - 2.45 D TrenchFETr Power MOSFET D APPLICATIONS D D -20 (4) S TSOP-6 Top View 1 6 (3) G 3 mm


    Original     		PDF Si3441BDV S-21127--Rev. 25-Nov-02 s21127

    Si3441BDV

    Abstract: Si3441BDV-T1
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1


    Original     		PDF Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 18-Jul-08

    Si3441BDV

    Abstract: Si3441BDV-T1 Si3441BDV-T1-E3
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1


    Original     		PDF Si3441BDV Si3441BDV-T1 Si3441BDV-T1--E3 Si3441BDV-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3441BDV-T1-E3

    Abstract: No abstract text available
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 11-Mar-11

    3136

    Abstract: 8627 AN609 Si3441BDV 41288
    Text: Si3441BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3441BDV AN609 13-Mar-07 3136 8627 41288

    Si3441BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3441BDV S-50383Rev. 21-Mar-05

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    lipo charger

    Abstract: AS3604 battery lipo discharge universal battery charger for mobile MBR0520 Si3441 Si3441BDV Si8401DB 020C DO1608C
    Text: a u s t ri a m i c r o s y s t e m s AS3604 D a ta S h e e t M u l t i - Sta n d a r d P o w e r M a n a g e m e n t U n i t 1 General Description „ The AS3604 is a highly-integrated CMOS power management device designed specifically for portable devices


    Original     		PDF AS3604 AS3604 lipo charger battery lipo discharge universal battery charger for mobile MBR0520 Si3441 Si3441BDV Si8401DB 020C DO1608C

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com


    Original     		PDF AS3604 AS3604

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X