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    SI3493DV Price and Stock

    Vishay Siliconix SI3493DV-T1-E3

    MOSFET P-CH 20V 5.3A 6TSOP
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    DigiKey SI3493DV-T1-E3 Reel
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    RS SI3493DV-T1-E3 Bulk 3,000
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    Vishay Siliconix SI3493DV-T1-GE3

    MOSFET P-CH 20V 5.3A 6TSOP
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    DigiKey SI3493DV-T1-GE3 Reel
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    Vishay Intertechnologies SI3493DV-T1-E3

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    Bristol Electronics SI3493DV-T1-E3 2,762
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    Quest Components SI3493DV-T1-E3 2,209
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    Vishay Intertechnologies SI3493DV-T1

    5300 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI3493DV-T1 1,815
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    Vishay Draloric SI3493DV-T1

    5300 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI3493DV-T1 699
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    Find more SI3493DV price and stock on Findchips.com

    SI3493DV Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    Si3493DV SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI3493DV-T1 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI3493DV-T1-E3 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI3493DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.3A 6-TSOP Original PDF
    SI3493DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.3A 6-TSOP Original PDF

    SI3493DV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Si3493DV

    Abstract: Si3493DV-T1
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance


    Original     		Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx S-41796--Rev. 04-Oct-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si3493DV

    Abstract: No abstract text available
    Text: Si3493DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -7 0.035 @ VGS = -2.5 V - 6.2 0.048 @ VGS = -1.8 V - 5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance


    Original     		Si3493DV S-22122--Rev. 25-Nov-02 PDF

    Si3493DV

    Abstract: Si3493DV-T1 marking code vishay SILICONIX 93xxx
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance


    Original     		Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx 18-Jul-08 marking code vishay SILICONIX 93xxx PDF

    Si3493DV

    Abstract: AN609
    Text: Si3493DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3493DV AN609 25-Aug-05 PDF

    93XXX

    Abstract: SI3493DV
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 11-Mar-11 93XXX PDF

    Si3493DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3493DV 18-Jul-08 PDF

    93XXX

    Abstract: SI3493DV
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance


    Original     		Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx 08-Apr-05 93XXX PDF

    SI3493DV

    Abstract: No abstract text available
    Text: Si3493DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -7 0.035 @ VGS = -2.5 V - 6.2 0.048 @ VGS = -1.8 V - 5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance


    Original     		Si3493DV S-21313--Rev. 05-Aug-02 PDF

    Si3493DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si3493DV S-50836 16-May-05 PDF

    Si3493DV

    Abstract: Si3493DV-T1-E3 93XXX
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 18-Jul-08 93XXX PDF

    Si3493BDV

    Abstract: Si3493DV Si3493BDV-T1-E3 Si3493DV-T1 Si3493DV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3493BDV vs. Si3493DV Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3493BDV-T1-E3 Replaces Si3493DV-T1-E3 Si3493BDV-T1-E3 Replaces Si3493DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si3493BDV Si3493DV Si3493BDV-T1-E3 Si3493DV-T1-E3 Si3493DV-T1 22-Feb-07 PDF

    Si3493DV

    Abstract: 93xxx Si3493DV-T1
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance


    Original     		Si3493DV Si3493DV-T1 Si3493DV-T1--E3 93xxx 93xxx PDF

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF