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Vishay Intertechnologies SI3973DV-T1-E3 MOSFETs 12V 2.7A 0.83W
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Mouser Electronics	SI3973DV-T1-E3					1 - 10 - 100 - 1000 - 10000 $0.313	Get Quote
Vishay Intertechnologies SI3973DV-T1-GE3 MOSFETs 12V 2.7A 1.15W 87mohm @ 4.5V
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Mouser Electronics	SI3973DV-T1-GE3					1 - 10 - 100 - 1000 - 10000 $0.313	Get Quote

SI3973DV Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3973DV		Vishay Siliconix	MOSFETs		Original	PDF
Si3973DV SPICE Device Model		Vishay	Dual P-Channel 12-V (D-S) MOSFET		Original	PDF
SI3973DV-T1-E3		Vishay Siliconix	Dual P-Channel 12-V (D-S) MOSFET		Original	PDF

SI3973DV Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IEC61249-2-21 Abstract: Si3973DV Si3973DV-T1-E3 Text: Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.087 at VGS = - 4.5 V - 2.7 - 12 0.120 at VGS = - 2.5 V - 2.3 0.165 at VGS = - 1.8 V - 1.5 • Halogen free According to IEC61249-2-21 Definition	Original	Si3973DV IEC61249-2-21 2002/95/EC Si3973DV-T1-E3 Si3973DV-T1-GE3 18-Jul-08 IEC61249-2-21	PDF
40575 Abstract: Si3973DV Si3973DV-T1 Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS	Original	Si3973DV Si3973DV-T1--E3 S-40575--Rev. 29-Mar-04 40575 Si3973DV-T1	PDF
410561 Abstract: 3919 74993 AN609 Si3973DV Text: Si3973DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3973DV AN609 13-Mar-07 410561 3919 74993	PDF
Untitled Abstract: No abstract text available Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable	Original	Si3973DV Si3973DV-T1 S-31670--Rev. 11-Aug-03	PDF
72442 Abstract: Si3973DV Text: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3973DV 19-Aug-03 72442	PDF
Untitled Abstract: No abstract text available Text: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable	Original	Si3973DV Si3973DV-T1 S-32037--Rev. 13-Oct-03	PDF
Untitled Abstract: No abstract text available Text: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS	Original	Si3973DV Si3973DV-T1--E3 S-32412--Rev. 24-Nov-03	PDF
Si3973DV Abstract: 72442 Text: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3973DV 18-Jul-08 72442	PDF
Untitled Abstract: No abstract text available Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS	Original	Si3973DV Si3973DV-T1--E3 08-Apr-05	PDF
Si3973DV Abstract: Si3973DV-T1 Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS	Original	Si3973DV Si3973DV-T1--E3 18-Jul-08 Si3973DV-T1	PDF
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8	PDF