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    Vishay Intertechnologies SI3973DV-T1-E3

    MOSFETs 12V 2.7A 0.83W
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    Vishay Intertechnologies SI3973DV-T1-GE3

    MOSFETs 12V 2.7A 1.15W 87mohm @ 4.5V
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    Mouser Electronics SI3973DV-T1-GE3
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    SI3973DV Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3973DV Vishay Siliconix MOSFETs Original PDF
    Si3973DV SPICE Device Model Vishay Dual P-Channel 12-V (D-S) MOSFET Original PDF
    SI3973DV-T1-E3 Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF

    SI3973DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC61249-2-21

    Abstract: Si3973DV Si3973DV-T1-E3
    Text: Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.087 at VGS = - 4.5 V - 2.7 - 12 0.120 at VGS = - 2.5 V - 2.3 0.165 at VGS = - 1.8 V - 1.5 • Halogen free According to IEC61249-2-21 Definition


    Original     		PDF Si3973DV IEC61249-2-21 2002/95/EC Si3973DV-T1-E3 Si3973DV-T1-GE3 18-Jul-08 IEC61249-2-21

    40575

    Abstract: Si3973DV Si3973DV-T1
    Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS


    Original     		PDF Si3973DV Si3973DV-T1--E3 S-40575--Rev. 29-Mar-04 40575 Si3973DV-T1

    410561

    Abstract: 3919 74993 AN609 Si3973DV
    Text: Si3973DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3973DV AN609 13-Mar-07 410561 3919 74993

    Untitled

    Abstract: No abstract text available
    Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable


    Original     		PDF Si3973DV Si3973DV-T1 S-31670--Rev. 11-Aug-03

    72442

    Abstract: Si3973DV
    Text: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3973DV 19-Aug-03 72442

    Untitled

    Abstract: No abstract text available
    Text: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.087 @ VGS = - 4.5 V - 2.7 0.120 @ VGS = - 2.5 V - 2.3 0.165 @ VGS = - 1.8 V - 1.5 D TrenchFETr Power MOSFETS APPLICATIONS D Portable


    Original     		PDF Si3973DV Si3973DV-T1 S-32037--Rev. 13-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si3973DV Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS


    Original     		PDF Si3973DV Si3973DV-T1--E3 S-32412--Rev. 24-Nov-03

    Si3973DV

    Abstract: 72442
    Text: SPICE Device Model Si3973DV Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3973DV 18-Jul-08 72442

    Untitled

    Abstract: No abstract text available
    Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS


    Original     		PDF Si3973DV Si3973DV-T1--E3 08-Apr-05

    Si3973DV

    Abstract: Si3973DV-T1
    Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS


    Original     		PDF Si3973DV Si3973DV-T1--E3 18-Jul-08 Si3973DV-T1

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8