Untitled
Abstract: No abstract text available
Text: GP15A thru GP15M Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-204AC (DO-15) * Glass-plastic encapsulation
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Original
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GP15A
GP15M
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
UL-94V-0
08-Apr-05
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PDF
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SI4435DY
Abstract: AN609 74549N
Text: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4435DY
AN609
31-Aug-05
74549N
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PDF
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GP15D
Abstract: GP15A GP15K
Text: GP15A thru GP15M Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-204AC (DO-15) * Glass-plastic encapsulation
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Original
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GP15A
GP15M
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
UL-94V-0
31-Aug-05
GP15D
GP15K
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PDF
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Untitled
Abstract: No abstract text available
Text: LH1523BB/ BAC/ BACTR Vishay Semiconductors Dual 1 Form B Solid State Relay SMD DIP Features • • • • • • • • • • • Dual Channel LH1511 Isolation Test Voltage 3750 VRMS Typical RON 10 Ω e3 Load Voltage 200 V Load Current 200 mA High Surge Capability
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Original
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LH1523BB/
LH1511)
2002/95/EC
2002/96/EC
i179084
LH1523
D-74025
31-Aug-05
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PDF
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LH1512B
Abstract: No abstract text available
Text: LH1512BAC/ BACTR/ BB Vishay Semiconductors Dual 1 Form A/B, C Solid State Relay DIP SMD Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 3750 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 200 mA High Surge Capability
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Original
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LH1512BAC/
i179032
2002/95/EC
2002/96/EC
UL1577,
E52744
LH1512
D-74025
31-Aug-05
LH1512B
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PDF
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Untitled
Abstract: No abstract text available
Text: LH1512BAC/ BACTR/ BB Vishay Semiconductors Dual 1 Form A/B, C Solid State Relay DIP SMD Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 3750 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 200 mA High Surge Capability
|
Original
|
LH1512BAC/
i179032
2002/95/EC
2002/96/EC
UL1577,
E52744
LH1512
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: LH1501BAB/ BABTR/ BT Vishay Semiconductors 1 Form B Solid State Relay DIP SMD Features • • • • • • • • Isolation Test Voltage 3750 VRMS Typical RON 20 Ω Load Voltage 350 V e3 Clean Bounce Free Switching Low Power Consumption SMD Lead Available on Tape and Reel
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Original
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LH1501BAB/
2002/95/EC
2002/96/EC
i179031
UL1577,
E52744
LH1501
D-74025
31-Aug-05
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PDF
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M11 marking
Abstract: vishay resistor 220k 562R M100402 VISHAY marking m11 M110603 marking m25 M1106 M-1106 M1140
Text: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • Pure tin on nickel barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances
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Original
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08-Apr-05
M11 marking
vishay resistor 220k
562R
M100402
VISHAY marking m11
M110603
marking m25
M1106
M-1106
M1140
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PDF
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74093
Abstract: 7916 AN609 Si4427BDY
Text: Si4427BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4427BDY
AN609
31-Aug-05
74093
7916
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PDF
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SFERNICE potentiometer
Abstract: sfernice Potentiometer vishay potentiometer Sfernice cm potentiometer 222mm
Text: MODEL 18 Vishay Sfernice Model 18 PR2 22.2 mm Diameter, 15 Turn Dial FEATURES • No backlash • Compact-requires minimal panel space (22,2 mm diameter requirement) • For use with precision potentiometers or other rotating devices, up to 15 turns • Designed for metal shaft
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Original
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31-Aug-05
SFERNICE potentiometer
sfernice Potentiometer vishay
potentiometer Sfernice
cm potentiometer
222mm
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PDF
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gp02-40
Abstract: GP02 GP-024
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr Major Ratings and Characteristics IF AV 0.25 A VRRM 1000 V to 4000 V IFSM 15 A IR 5.0 µA VF 3.0 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation
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Original
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GP02-20
GP02-40
DO-204AL
DO-41)
MIL-S-19500
DO-204AL,
UL-94V-0
31-Aug-05
gp02-40
GP02
GP-024
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PDF
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LH1511B
Abstract: No abstract text available
Text: LH1511BAB/ BABTR/ BT Vishay Semiconductors 1 Form B Solid State Relay DIP SMD Features • • • • • • • • Isolation Test Voltage 3750 VRMS Typical RON 10 Ω Load Voltage 200 V e3 Clean Bounce Free Switching Low Power Consumption SMD Lead Available on Tape and Reel
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Original
|
LH1511BAB/
2002/95/EC
2002/96/EC
i179031
UL1577,
E52744
LH1511
D-74025
31-Aug-05
LH1511B
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PDF
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Untitled
Abstract: No abstract text available
Text: LH1502BAC/ BACTR/ BB Vishay Semiconductors Dual 1 Form A/B, C Solid State Relay DIP SMD Features • • • • • • • • • • • Current Limit Protection Isolation Test Voltage 3750 VRMS Typical RON 20 Ω e3 Load Voltage 350 V Load Current 150 mA
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Original
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LH1502BAC/
2002/95/EC
2002/96/EC
i179032
LH1502
D-74025
31-Aug-05
|
PDF
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BF998B
Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RA BF998RAW BF998RB BF998RW
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343R
OT-343R
BF998B
BF998 VISHAY
BF998A-GS08
BF998A
BF998RA
BF998RAW
BF998RB
BF998RW
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PDF
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m 6125
Abstract: AN609 Si4435BDY
Text: Si4435BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4435BDY
AN609
31-Aug-05
m 6125
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PDF
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7916
Abstract: AN609 Si4425BDY
Text: Si4425BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4425BDY
AN609
31-Aug-05
7916
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PDF
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74094
Abstract: a 6151 A 7710 AN609 Si4430BDY
Text: Si4430BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4430BDY
AN609
31-Aug-05
74094
a 6151
A 7710
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PDF
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SFERNICE potentiometer
Abstract: pliers potentiometer Sfernice 6 pin potentiometer
Text: MODEL 25 Vishay Sfernice MODEL 25 PR1 46 mm Diameter, 20 Turn Dial FEATURES • Large package size • For use with precision poteniometers or other devices, up to 20 turns • Excellent readability • Precision feel - no backlash • Cast housing MECHANICAL SPECIFICATIONS
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Original
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31-Aug-05
SFERNICE potentiometer
pliers
potentiometer Sfernice
6 pin potentiometer
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PDF
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Untitled
Abstract: No abstract text available
Text: BYD33DGP thru BYD33MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A ERSM 10 mJ, 7 mJ trr 150 ns, 250 ns, 300 ns IR 5.0 µA
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Original
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BYD33DGP
BYD33MGP
DO-204AL
DO-41)
MIL-S-19500
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V to 1000 V IFSM 30 A ERSM 7 mJ VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat
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Original
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BYD13DGP
BYD13MGP
DO-204AL
DO-41)
MIL-S-19500
DO-204AL,
08-Apr-05
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PDF
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931AM
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION 0 RELEASE 01 REVISED HO U S IN G MATERIAL: T H E R M O P L A S T IC . DATE PE REC 0S12 - 0 0 3 4 - 0 5
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OCR Scan
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0S12-0034-05
EC0-09-024606
10JUN05
02NOV09
31MAR2000
31AUG05
us049721
931AM
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 5 4 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T AD C O R P O R A TIO N . 2.54 [. 1 O O ] DI A 2 HOUSING MATERIAL: THERMOPLASTIC.
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OCR Scan
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0S12-0034-05
10JUN05
02NOV09
31MAR2000
31AUG05
us049721
\dm-tec-mod\5532903
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS D IS T 00 LTR B CONTAC CONNECTOR ASS XAMPLARY LOADED MENSION DESCRIPTION DATE REVISED PER ECN 0 5 1 2 - 0 3 0 4 - 0 5
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OCR Scan
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31MAR2000
|
PDF
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yoke coil diagram
Abstract: SDT-S-112LMR OEG SDT-S-109LMR relay 10A 250V tyco diagram 94v-0 SDT-S-105LMR SDT-S-109LMR 1461102-5 relay 12v 100A SDT-S-103LMR
Text: D PARTA 1 2 3 4 L0C HB THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D COPYRIGHT DIST P PARTB T v ~5 cOY H! u S 5A 250V ~ L m / m 250VT 3A/100A 2 5 0 V - A EC0-08-007869 CHANGE DATE CODE&TE LOGO
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OCR Scan
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0A/80A
A/100A
50V-OEG
31-AUG-05
yoke coil diagram
SDT-S-112LMR
OEG SDT-S-109LMR
relay 10A 250V tyco
diagram 94v-0
SDT-S-105LMR
SDT-S-109LMR
1461102-5
relay 12v 100A
SDT-S-103LMR
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PDF
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