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    Untitled

    Abstract: No abstract text available
    Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    PDF SiE822DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    PDF SiE830DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    kvp 61

    Abstract: kvp 03
    Text: GFMQ, GFWQ Vishay Draloric Ceramic Capacitor Stacks Ceramic capacitor stacks with solder tags L RATED VOLTAGE UR: see table below 18 øD 1.5 0.059 3.2 (0.126) DESIGN: MODEL GFMQ DIELECTRIC STRENGTH: 0.3 (0.012) ~2 (0.079) see table below (Test voltage between solder tags)


    Original
    PDF 18-Jul-08 kvp 61 kvp 03

    l 0706

    Abstract: gdmq0806
    Text: GDMQ Vishay Draloric Ceramic Capacitor Stacks DESIGN: Ceramic capacitor stacks with leads L RATED VOLTAGE UR: see table below DIELECTRIC STRENGTH: Ø DISSIPATION FACTOR tan δ: D 66 2.6 see table below (Test voltage between leads) ≤ 25 • 10-3 0.6 6.9


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    PDF 18-Jul-08 l 0706 gdmq0806

    Untitled

    Abstract: No abstract text available
    Text: SiE820DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling


    Original
    PDF SiE820DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiE800DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling


    Original
    PDF SiE800DF 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiE800DF Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided


    Original
    PDF SiE800DF 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiE832DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    PDF SiE832DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: GDMQ Vishay Draloric Ceramic Capacitor Stacks DESIGN: Ceramic capacitor stacks with leads L RATED VOLTAGE UR: see table below DIELECTRIC STRENGTH: Ø DISSIPATION FACTOR tan δ: D 66 2.6 see table below (Test voltage between leads) ≤ 25 • 10-3 0.6 6.9


    Original
    PDF 72/hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: GFMQ, GFWQ Vishay Draloric Ceramic Capacitor Stacks Ceramic capacitor stacks with solder tags L RATED VOLTAGE UR: see table below 18 øD 1.5 0.059 3.2 (0.126) DESIGN: MODEL GFMQ DIELECTRIC STRENGTH: 0.3 (0.012) ~2 (0.079) see table below (Test voltage between solder tags)


    Original
    PDF 11-Mar-11

    ok ps

    Abstract: pq41 EN61000-3-3 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5
    Text: AC-DC 350 Watts xppower.com JPS350 Series • 300 W with Convection Cooling • High Efficiency - Up to 90% • Meets EN61000-3-2, -3 • Meets 1U, Low Profile Requirements • Zero Voltage Switching Technology • AC OK & DC OK Signals • Current Sharing


    Original
    PDF JPS350 EN61000-3-2, VAC/60Hz 10-Jun-05 JPS350 ok ps pq41 EN61000-3-3 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5

    Untitled

    Abstract: No abstract text available
    Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    PDF SiE822DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    7445-1

    Abstract: No abstract text available
    Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    PDF SiE822DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 7445-1

    WX26 cable

    Abstract: marking code H5C SMD Transistor xo-54be max 083 Crystal Oscillator, Leaded, Radial, 16.000 MHz smd transistor h5c XO-54B p l e sq3300 mto13fad XO-52BE
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-0507 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    PDF vsE-db0020-0507 WX26 cable marking code H5C SMD Transistor xo-54be max 083 Crystal Oscillator, Leaded, Radial, 16.000 MHz smd transistor h5c XO-54B p l e sq3300 mto13fad XO-52BE

    Untitled

    Abstract: No abstract text available
    Text: GFMQ, GFWQ Vishay Draloric Ceramic Capacitor Stacks Ceramic capacitor stacks with solder tags L RATED VOLTAGE UR: see table below 18 øD 1.5 0.059 3.2 (0.126) DESIGN: MODEL GFMQ DIELECTRIC STRENGTH: 0.3 (0.012) ~2 (0.079) see table below (Test voltage between solder tags)


    Original
    PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiE832DF Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    PDF SiE832DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 54 REVISIONS LTR T DESCRIPTION DATE EC 0G3B 1042 04 DWN APVD BSV DB 10JUN05 D 1.1 9 ±0.15 a A 9 5 .1 0 9 1 .1 4 8 7 .1 7


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    PDF 10JUN05 1ZFEB91 19FEB91 MTA-156 31MAR2000

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST CM 54 REVISIONS LTR T DESCRIPTION EC 0G3B DWN DATE 1042 04 APVD BSV DB 10JUN05 A D D V. S "N i S 95.10 91.14 87.17 83.21 79.25


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    PDF 10JUN05 1ZFEB91 19FEB91 31MAR2000

    6406

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 54 REVISIONS LTR DESCRIPTION DATE EC 0G3B 1042 04 DWN APVD BSV DB 10JUN05 D D 9 5 .10 [3.744] 24 5-640604-4 91 .14 [3.588]


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    PDF 10JUN05 1ZFEB91 19FEB91 MTA-156 31MAR2000 6406

    F200

    Abstract: No abstract text available
    Text: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 5 4 2 3 P U B L IC A T IO N R IG H T S LOC C O R P O R A TIO N . 2.54 [. 1 O O ] R E V I S I ON S DI A 3 RELEASE PER EC 0 S 1 2 - 0 0 3 4 - 0 5


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    PDF 0S12-0034-05 EC0-09-024606 10JUN05 02NOV09 31MAR2000 06JUL05 us049721 F200

    931AM

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION 0 RELEASE 01 REVISED HO U S IN G MATERIAL: T H E R M O P L A S T IC . DATE PE REC 0S12 - 0 0 3 4 - 0 5


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    PDF 0S12-0034-05 EC0-09-024606 10JUN05 02NOV09 31MAR2000 31AUG05 us049721 931AM

    Untitled

    Abstract: No abstract text available
    Text: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 5 4 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T AD C O R P O R A TIO N . 2.54 [. 1 O O ] DI A 2 HOUSING MATERIAL: THERMOPLASTIC.


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    PDF 0S12-0034-05 10JUN05 02NOV09 31MAR2000 31AUG05 us049721 \dm-tec-mod\5532903

    Untitled

    Abstract: No abstract text available
    Text: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 5 3 4 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T 25 AD C O R P O R A TIO N . R E V I S I ON S LTR 01 DI A 2 HOUSING MATERIAL: THERMOPLASTIC.


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    PDF 0S12-0034-05 10JUN05 19JAN 31MAR2000 30AUG05 us049721 ALEX\5532431

    Untitled

    Abstract: No abstract text available
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. F -F COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 25 R E V IS IO N S P LTR RELEASE DI A 3 DESCRIPTION HOUSING MATERIAL: THERMOPLASTIC. CONTACT MATERIAL: COPPER


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    PDF 10JUN05 31MAR2000