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    Toshiba America Electronic Components TC5116100CSJ-60

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC5116100CSJ-60 726 1
    • 1 $7.056
    • 10 $4.5864
    • 100 $3.0574
    • 1000 $2.893
    • 10000 $2.893
    		Buy Now
    Quest Components TC5116100CSJ-60 580
    • 1 $9.45
    • 10 $9.45
    • 100 $9.45
    • 1000 $3.78
    • 10000 $3.78
    		Buy Now

    Toshiba America Electronic Components TC5116160BJ60

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC5116160BJ60 50
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    Toshiba America Electronic Components TC5116100FT80

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC5116100FT80 20
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    TC51161 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    TC51161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tc5118165bj

    Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
    Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide


    Original     		PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 TC5116405BSJ/BST 300mil) cycles/64ms TC51V16325BJ: SOJ70-P-400A tc5118165bj TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400

    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


    Original     		PDF 16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445

    TC5116160

    Abstract: A461
    Text: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116160AI/AFT-60/70/80 TC5116160AJ/AFT TC51161610AJ/AFT-60/70/80 A8R--A11R TC5U6160AJ/AFT-60/70/80 TC5116160 A461

    SK 3002

    Abstract: No abstract text available
    Text: TOSHIBA TC5116165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5116165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as


    OCR Scan     		PDF TC5116165CJ/CFT-50 576-WORD 16-BIT TC5116165CJ/CFT 42-pin 6165CJ/CFT-50 SOJ42-P-400-1 SK 3002

    TC5116160

    Abstract: AI05a CFT50
    Text: TOSHIBA TC5116160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5116160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF TC5116160CJ/CFT-50 576-WORD 16-BIT TC5116160CJ/CFT SOJ42-P-400-1 TC5116160 AI05a CFT50

    Untitled

    Abstract: No abstract text available
    Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5116100BSJ-60/70 5116100BS 51161OOBSJ 300mil)

    A11RC

    Abstract: No abstract text available
    Text: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116160AJ/AFT-60/70/80 TC5116160AJ/AFT 00B5777 0D2577Ã TC51161610AJ/AFT-60/70/80 0Q25771 TC5116160AÃ A11RC

    TC5116100

    Abstract: No abstract text available
    Text: TOSHIBA TC5116100J/Z/FT-60/70 16,777,216 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC5116100J/Z/FT is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC5116100J/Z/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116100J/Z/FT-60/70 TC5116100J/Z/FT TC5116100J/Z/FT. TC5116100

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


    OCR Scan     		PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit


    OCR Scan     		PDF ----------------TC5116180AJ/AFT-60/70/-80 TC5116180AJ/AFT TC5116180AJ/AFT-60/70/80

    AFT 518

    Abstract: A518 A531 a539 KAS 34
    Text: TOSHIBA TC5116180AJ/AFT-60/70/-80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116180AJ/AFT-60/70/-80 TC5116180AJ/AFT TC5116180AJ/AFT-60/70/80 AFT 518 A518 A531 a539 KAS 34

    TC5116100BSJ60

    Abstract: TC5116100BSJ70 TC5116100
    Text: TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM Description The TC51161OOBSJ is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC51161OOBSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5116100BSJ-60/70 TC51161OOBSJ TC51161 300mil) TC5116100BSJ60 TC5116100BSJ70 TC5116100

    TC5116100

    Abstract: No abstract text available
    Text: TOSHIBA TC5116100J/Z/FF60/70 16,777,216 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC5116100J/Z/FT is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC5116100J/Z/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC5116100J/Z/FF60/70 TC5116100J/Z/FT theTC51161 TC5116100J/Z/FT. TC5116100

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    tr 30 f 124

    Abstract: V16105
    Text: X6 C a pa city 4 M Bit T y p e No. T C 5 1 4 2 8 0 B J L L / B Z L L -7 0 262144 70 20 35 130 T C 5 1 4 2 8 0 B J L L 7 B Z L L -8 0 x 18 80 20 40 150 Max. Power Dto8 pation<mW) A ctive S t a n d bv 605 1.1 200|jA) 5V±10 % 5 23 T C 5 1 161OOJ/Z/FT/TR-60


    OCR Scan     		PDF 161OOJ/Z/FT/TR-60 C5116100BJfiSJ/BZ/BFTfiST/GrrFVBSFr6VK-SO TC51161OOBJflSJ/BZBFT/BST/BTR/BSHrBVK-M TC5118100 JBSJBZ/BFT/BST/BTR/BSHrBVK-70 16400J/2/FT/TR-60 16400J/Z/FT/TR-70 TC511M006J/BSJBZ/BnflST/BTR/BSFr BVK-50 05116400BJ/BSJBZ/BFTilST/BTR/6SflrBVK-flO tr 30 f 124 V16105

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference