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    ROHM Semiconductor MSM51V16400F-60T3KR1

    DRAM Chip FPM 16M-Bit 4Mx4 3.3V 24-Pin TSOP (Alt: MSM51V16400F-60T3KR1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica MSM51V16400F-60T3KR1 13 Weeks 1,000
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    MSM51V16400 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM51V16400-60JS OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-60TK OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-60TL OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-70JS OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-70TK OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-70TL OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-80JS OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-80TK OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400-80TL OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400A OKI Electronic Components 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE Scan PDF
    MSM51V16400A-60JS OKI Electronic Components 4,194,304-word x 4-bit dynamic RAM Scan PDF
    MSM51V16400A-60SJ OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM51V16400A-60TS-K OKI Electronic Components 4,194,304-word x 4-bit dynamic RAM Scan PDF
    MSM51V16400A-60TS-K OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM51V16400A-60TS-L OKI Electronic Components 4,194,304-word x 4-bit dynamic RAM Scan PDF
    MSM51V16400A-60TS-L OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM51V16400A-70JS OKI Electronic Components 4,194,304-word x 4-bit dynamic RAM Scan PDF
    MSM51V16400A-70SJ OKI Semiconductor 4,194,304-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM51V16400A-70TS-K OKI Electronic Components 4,194,304-word x 4-bit dynamic RAM Scan PDF
    MSM51V16400A-70TS-L OKI Electronic Components 4,194,304-word x 4-bit dynamic RAM Scan PDF

    MSM51V16400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSM51V16160F

    Abstract: MSM51V16400 MSM51V16400F
    Text: FEDD51V16400F-01 Issue Date: Sep. 29, 2003 OKI Semiconductor MSM51V16400F 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and


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    PDF FEDD51V16400F-01 MSM51V16400F 304-Word MSM51V16400F MSM51V16160F 26/24-pin cycles/64ms MSM51V16400

    MSM51V16400D

    Abstract: No abstract text available
    Text: Pr E2G0122-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,


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    PDF E2G0122-17-61 304-Word MSM51V16400D/DSL 26/24-pin MSM51V16400DSL MSM51V16400D

    msm51v16400b

    Abstract: No abstract text available
    Text: ¡ Semiconductor MSM51V16400B/BSL ¡ Semiconductor MSM51V16400B/BSL E2G0067-17-41 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400B/BSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400B/BSL achieves high integration, high-speed operation, and


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    PDF MSM51V16400B/BSL E2G0067-17-41 304-Word MSM51V16400B/BSL 26/24-pin msm51v16400b

    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


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    PDF 16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445

    MSM51V16400

    Abstract: No abstract text available
    Text: J2G0122-17-61 作成:1998年 3月 ¡ 電子デバイス MSM51V16400D/DSL l 暫定 MSM51V16400D/DSL 4,194,304-Wordx4-Bit DYNAMIC RAM:高速ページモード n 概要 MSM51V16400D/DSLはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックラ


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    PDF J2G0122-17-61 MSM51V16400D/DSL MSM51V16400D/DSL 304-Word MSM51V16400D/DSLCMOS4 42CMOS 26/24SOJ26/24TSOP 09664ms4 096128msSL 26/24300milSOJ MSM51V16400

    MSM51V16400DSL

    Abstract: No abstract text available
    Text: Pr E2G0122-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,


    Original
    PDF E2G0122-17-61 304-Word MSM51V16400D/DSL 26/24-pin MSM51V16400DSL MSM51V16400DSL

    Untitled

    Abstract: No abstract text available
    Text: J2G0067-17-41 作成:1998年 1月 MSM51V16400B/BSL l 前回作成:1997年 5月 ¡ 電子デバイス MSM51V16400B/BSL 4,194,304-Wordx4-Bit DYNAMIC RAM:高速ページモード n 概要 MSM51V16400B/BSLはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックラ


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    PDF J2G00671741 MSM51V16400B/BSL 304Word MSM51V16400B/BSL MSM51V16400B/BSLCMOS4 42CMOS 26/24SOJ26/24TSOP 09664ms4 096128msSL 26/24300milSOJ

    Untitled

    Abstract: No abstract text available
    Text: FEDD51V16400F-02 Issue Date: Jul. 19, 2005 OKI Semiconductor MSM51V16400F 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and


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    PDF FEDD51V16400F-02 MSM51V16400F 304-Word MSM51V16400F MSM51V16160F 26/24-pin cycles/64ms

    DRAMs

    Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
    Text: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP


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    PDF MSM511664B-xx MSM514256C-xx MSM514256CL-xx MSM511000C-xx MSM51100CL-xx MSM54V32126 MSM5432126 16-Meg MSM5116160A-xx MSM5116165A-xx DRAMs MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c

    MSM51V16400DSL

    Abstract: msm51v16400d
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    PDF MSM51V16400D/DSL TSOPII26/24-P-300-1 MSM51V16400DSL msm51v16400d

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


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    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    MSM51V16400A

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16400 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is


    OCR Scan
    PDF MSM51V16400A 304-Word MSM51V16400A 26/24-pin

    Untitled

    Abstract: No abstract text available
    Text: E2G0122-17-61 O K I Semiconductor Thisversion:^ 1998 MSM51V16400D/DSL_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,


    OCR Scan
    PDF E2G0122-17-61 MSM51V16400D/DSL_ 304-Word TheMSM51 V16400D/DSL MSM51V16400D/DSL MSM51V16400D a26/24-pin 26/24-pin

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 51V16400A_ 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V16400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is


    OCR Scan
    PDF 51V16400A_ 304-Word MSM51V16400A 304-word 26/24-pin cycles/64

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.


    OCR Scan
    PDF MSM51V16400 304-Word MSM51V16400 cycles/64m BME40

    MSM51V16400A

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16400 A_ 4,194,304-Word x 4-Bit DYNAMIC R AM : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16400A is a 4494,304-w ord x 4-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, a n d lowpo w er consum ption d u e to q u ad ru p le polysilicon double m etal CMOS. The MSM51V16400A is


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    PDF MSM51V16400A_ 304-Word MSM51V16400A 26/24-pin 4096cycles/64ms

    MSM51V16400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a n e w generation dynam ic organized as 4,194,304-w o rd x 4-bit. The technology used to fabricate the MSM51V16400 is O K I's C M O S silicon gate process technology.


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    PDF MSM51V16400 304-Word MSM51V16400 cycles/64ms 2424D b724240

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is


    OCR Scan
    PDF MSM51V16400A 304-Word MSM51V16400A 26/24-pin cycles/64

    MSM51V16400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16400 4,194,304-W ord x 4-B it DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynam ic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.


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    PDF MSM51VI6400 304-Word MSM51V16400 cycles/64ms MSM51V16400 72424D

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16400 4 Meg x 4-Bit DYNAMIC RAM DESCRIPTION The MSM51V16400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL


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    PDF MSM51V16400 MSM51V16400 16-Meg 400mil O-OKI-6388

    m51171

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


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    PDF MSM51V17180 576-Word 18-Bit MSM51V17180 cycles/32ms m51171

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K

    MSM5117180-70

    Abstract: MSM5117180-80
    Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117180 576-Word 18-Bit MSM5117180 cycles/32ms MSM5117180-70 MSM5117180-80

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750