TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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zener 563
Abstract: No abstract text available
Text: TOSHIBA _ 015Z2.0-015Z12 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 U nit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS • Sm all Package • Nominal voltage tolerance about +2.5% 2.0V -12V 0.8 + 0.1
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015Z2
0-015Z12
015Z9
015Z10
015Z11
015Z12
zener 563
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15Z DIODE
Abstract: 15-Z
Text: TOSHIBA_ 015 Z 2.0 -01 5Z 1 2 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS 0.8 + 0.1 n 1.3 ± 0.1 SYMBOL RATING UNIT CHARACTERISTIC p* Power Dissipation
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015Z2
0-015Z12
15Z DIODE
15-Z
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02DZ10
Abstract: 02DZ
Text: P=200mW Type 02DZ Series : USC Package Vz (V) Type No. 02DZ2.0 02DZ2.2 02DZ2.4 02DZ2.7 02DZ3.0 02DZ3.3 02DZ3.6 02DZ3.9 02DZ4.3 X Z X z X z X z X z X z X z X z X Y z 020Z4.7 X Y 02DZ5.1 X Y 02DZ5.6 X Y 02DZ6.2 X Y z z z z MIN. MAX. 1.85 1.95 2.05 2.16 2.28
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200mW
02DZ2
02DZ3
02DZ4
02DZ10
02DZ
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Untitled
Abstract: No abstract text available
Text: 015Z2.0-015Z12 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 CONSTANT VOLTAGE REGULATION APPLICATIONS • Small Package • Nominal voltage tolerance about +2.5% 2.0V-12V Unit in mm 0.8 + 0.1 ^=2 MAXIMUM RATINGS (Ta = 25°C) 0 ±0.05
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015Z2
0-015Z12
V-12V)
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015Z6.8-Y
Abstract: 015Z4.3-Y 015Z12
Text: 015Z2.0-015Z12 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 CONSTANT VOLTAGE REGULATION APPLICATIONS Small Package • Nominal voltage tolerance about +2.5% 2.0V-12V ^=2 . 1.3 ± 0.1 2.1 ±0.1 • Unit in mm M A X IM U M RATINGS (Ta = 25°C)
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015Z2
015Z12
0-015Z12
V-12V)
015Z12-x
961001EAA2
015Z6.8-Y
015Z4.3-Y
015Z12
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Untitled
Abstract: No abstract text available
Text: TOSHIBA _ TOSHIBA DIODE 0 1 5 Z 2 .0 -0 1 5 Z 1 2 SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 U nit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS • Sm all Package • Nominal voltage tolerance about +2.5% 2.0V -12V
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015Z2
0-015Z12
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015Z12-X
Abstract: No abstract text available
Text: TOSHIBA_ 015 Z 2.0 -01 5Z 1 2 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 015Z2.0-015Z12 Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS 0.8 + 0.1 n 1.3 ± 0.1 SYMBOL RATING UNIT CHARACTERISTIC p* Power Dissipation
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015Z2
0-015Z12
V-12V)
015Z12-X
0-015truments,
015Z12-X
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Diode XA 1106
Abstract: No abstract text available
Text: TOSHIBA nm73 n~nm7i7 TOSHIBA DIODE 015Z2.0-015Z12 SILICON EPITAXIAL PLANAR TYPE Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS Small Package Nominal voltage tolerance about ±2.5% 0.8 ± 0.1 9 0 V -1 9 .V Ì n 1 1.3 + 0.1 . M A X IM U M RATINGS (Ta = 2 5°C
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015Z2
0-015Z12
015Z11
015Z12
Diode XA 1106
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