MSM51V16160DSL
Abstract: No abstract text available
Text: E2G0130-17-61 O K I Semiconductor MSM5 1V I6 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N The M SM 51V16160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon gate CMOS technology. The 51V16160D / DSL achieves high integration, high-speed operation,
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E2G0130-17-61
MSM51VI6160P/PSL
576-Word
16-Bit
MSM51V16160D/DSL
heMSM51V16160D/DSLachieveshighintegration
42-pin
MSM51V16160DSL
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Untitled
Abstract: No abstract text available
Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )
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51V16160A
51V18160A
116160A
118160A
256Kx4
514260B/BSL
514256C/CL
51V6800A
51V16100A
51V17100A
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
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51V16100
51V16160
51V16400
51V17100
51V17400
51V18160
TC5116160A
TC5116800A
TC5117800A
uPD4216100
intel 82c51
Mitsubishi 82c54
intel p8085a
PD8155H
nec 8212c
82C55
harris 82c55
82C59 toshiba
m5l8288
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OKI MSM 505
Abstract: 51V16160
Text: O K I Semiconductor 51V16160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V16160A is
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MSM51V16160A
576-Word
16-Bit
MSM51V16160A
42-pin
50/44-pin
OKI MSM 505
51V16160
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor 51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the 51V16160 is OKI's CMOS silicon gate process technology.
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MSM51V16160_
576-Word
16-Bit
MSM51V16160
16-bit
cycles/64ms
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51V1616
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V16160 achieves high integration, high-speed operation, and low-power
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MSM51
V16160
576-Word
16-Bit
MSM51VI6160
MSM51V16160
42-pin
51V1616
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DU9 308
Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.
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MSM5117900
152-Word
MSM5117900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
DU9 308
32-PIN
MSM5117900-70
MSM5117900-80
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