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    Bertech-Kelex CFT-50MM

    TAPE COPPER FOIL 1.97"X36YDS
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    DigiKey CFT-50MM Bulk
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    Toshiba America Electronic Components TC59LM806CFT-50

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    Bristol Electronics TC59LM806CFT-50 1,049
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    Toshiba America Electronic Components TC59LM806CFT50

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    Bristol Electronics TC59LM806CFT50 240
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    Toshiba America Electronic Components TC59LM806CFT50A00

    8,388,608-WORDS X 4 BANKS X 8-BITS, 256MBITS NETWORK FCRAM1 DDR DRAM, 32MX8, 0.65ns, MOS, PDSO66
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    ComSIT USA TC59LM806CFT50A00 20
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    CFT50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Variable Area Rotameter

    Abstract: fmx siemens MASONEILAN VALVE ultrasonic flow meter rtt 10 foxboro foxboro FLOW METER turbine masoneilan MASONEILAN SVI ii Vortex flowmeter panametrics xmt 868
    Text: IndustrialIT System 800xA Device Management HART Data Sheet Integrated HART Devices Revision: September 2010 Device Revision Manufacturer ID Device ID 1/5 22 135 4-Electrode Cond. 2wire, IS, Field 1 26 36 TB82PH pH 1 18 80 TB82PH-Combined pH/ORP 2-wire 1 26


    Original     		PDF 800xA TB82PH TB82PH-Combined TB82TC-Combined TB82TE-Combined LB491 X3301 3BDD013118 Variable Area Rotameter fmx siemens MASONEILAN VALVE ultrasonic flow meter rtt 10 foxboro foxboro FLOW METER turbine masoneilan MASONEILAN SVI ii Vortex flowmeter panametrics xmt 868

    panametrics xmt 868

    Abstract: honeywell stt25h prosonic RTT15 promag 50 STT25H panametrics promag 10 D699 STT17H
    Text: IndustrialIT HART Device Type Managers for Freelance 800F and AC870P / Melody Data Sheet Revision : September 2010 The following Device Type Managers are interoperable with the beneath listed Freelance 800F and AC870P / Melody versions. Please see the M column for DTMs interoperable with AC870P / Melody and the F column for those interoperable with


    Original     		PDF AC870P panametrics xmt 868 honeywell stt25h prosonic RTT15 promag 50 STT25H panametrics promag 10 D699 STT17H

    TC5118160CJ

    Abstract: tc5118160 TC5118160c
    Text: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF TC5118160CJ/CFT-50 576-WORD 16-BIT TC5118160CJ/CFT 42-pin 50-pin TC5118160CJ tc5118160 TC5118160c

    Untitled

    Abstract: No abstract text available
    Text: K / D io d e s $ ^ ¥ # t e x A ' 1' * 0M i f i J £ £ j * » 3 fc<O i, x / W X * - ft- T-rofSJittco^*Ja* fc, t f x S t o &3 ¥ i J H * x V H x u u i a f i J l t t <7 &-5 b <D t L X a m ^ t z t £ < tz lb IZ, W T < 7 ),^C )± ^L T < t c - ^ f t - t t r < £ f t ' o t ” 7 f t 4 — SSf U T ( f t 4 (ft f t i f AB#,


    OCR Scan     		PDF

    T82F

    Abstract: C434 C394 C395 C477 C448 T9GH 28 TO200AC package
    Text: 7294621 POWEREX INC "tÏ Inverter Grade SCRs DE I 72^4^21 0 | 7% ^ $ - -/<? iT RMS Tc=6?° C 50% Duty Cycle, H alf Sine 1KHz (Amps) Vdr m / V r r m (mA) /* t fo r Fusing @ 8.3 ms (A3sec x 10A) Range (Volts) (Am ps) 14.9 800-1200 Id r m / I r r m Rated


    OCR Scan     		PDF 1252F_ O-200AB O-200AC T82F C434 C394 C395 C477 C448 T9GH 28 TO200AC package

    TC51V16160

    Abstract: No abstract text available
    Text: TOSHIBA TC51V 1 6160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V16160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC51V16160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF TC51V 6160CJ/CFT-50 576-WORD 16-BIT TC51V16160CJ/CFT 42-pin 50-pin TC51V16160

    SK 3002

    Abstract: No abstract text available
    Text: TOSHIBA TC5116165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5116165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as


    OCR Scan     		PDF TC5116165CJ/CFT-50 576-WORD 16-BIT TC5116165CJ/CFT 42-pin 6165CJ/CFT-50 SOJ42-P-400-1 SK 3002

    TC5116160

    Abstract: AI05a CFT50
    Text: TOSHIBA TC5116160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5116160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF TC5116160CJ/CFT-50 576-WORD 16-BIT TC5116160CJ/CFT SOJ42-P-400-1 TC5116160 AI05a CFT50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC51V18165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC51V18165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC51V18165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as


    OCR Scan     		PDF TC51V18165CJ/CFT-50 576-WORD 16-BIT TC51V18165CJ/CFT 42-pin 50-pin

    tc511000aj

    Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
    Text: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100


    OCR Scan     		PDF TC511000AJ/AZ-70 TC511000AJ/AZ-80 TC511000AJ/AZ-10 TC511OOOAJL/AZL-70 TC511000AJL/AZL-80 TC511000AJL/AZL-10 TC511000BJ/BZ/BFT/BTR-60 TC511000BFT/BTR-70 TC511000BFT/BTR-80 TC511000BFT/BTR-10 tc511000aj ATR80 1048576x4 TC511664 tc511665 TC511664BJl

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    tc514280

    Abstract: TC514260BJLL TC514170 TC514260BJL TC514440 TC514260BJ
    Text: X6 Capacity Type No. Max. Access Time n$ Min. Cyd Power Organization Tim$(ns) Supply (V) TC514400ASJUAZL/AFTUATRL-60 60 20 30 110 TC514400ASJUAZL7AFTUATRL-70 70 20 35 130 TC514400ASJL/AZL/AFTL/ATRL-80 80 20 40 150 80 20 40 150 80 20 40 50 13 25 TC51V4400ASJ/AFT-80


    OCR Scan     		PDF TC514400ASJUAZL/AFTUATRL-60 TC514400ASJUAZL7AFTUATRL-70 TC514400ASJL/AZL/AFTL/ATRL-80 TC51V4400ASJ/AFT-80 TC51V4400ASJL/AFTL-80 TC514400CSJ/CFT-50 14440CSJ/CFT-50 TC514440CSJ/CFT-60 TC514440CSJ/CFT-70 TC514800AJ/AZ/AFT-70 tc514280 TC514260BJLL TC514170 TC514260BJL TC514440 TC514260BJ

    TC5118165CJ

    Abstract: TC5118165 CFT50
    Text: TOSHIBA TC5118165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5118165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as


    OCR Scan     		PDF TC5118165CJ/CFT-50 576-WORD 16-BIT TC5118165CJ/CFT 42-pin 50-pin TC5118165CJ/CFT-60 TC5118165CJ TC5118165 CFT50