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    51V17100 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V17100 216-Word 51V17100 216-w S4H40 2424D

    MSM51V17100

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 17I00 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 51V I7100 is OKI's CM O S silicon gate process technology.


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    PDF MSM51VI7100 216-Word MSM51V17100 cycles/32ms MSM51V17100 A0-A11

    MSM51V17100

    Abstract: 724540
    Text: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The 51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the 51V17100 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V17100_ 216-Word MSM51V17100 cycles/32ms MSM51V17100 A0-A11 b724240 724540

    Untitled

    Abstract: No abstract text available
    Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )


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    PDF 51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A

    1710070

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V17100 16 Meg x 1-Bit DYNAMIC RAM DESCRIPTION The 51V17100 is a 16 M egabit dynam ic m emory organized a s 16,777,216 w ord by 1 bit. The technology used to fabricate the 51V17100 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V17100 MSM51V17100 16-Meg 400mil 1-800-CIKI-6388 1710070

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


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    PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    MSM51V17100

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V17100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the 51V17100 is OKI's CMOS silicon gate process technology.


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    PDF MSM51VI7100_ 216-Word MSM51V17100 cycles/32ms MSM51V17100 b724E4G

    OE306G

    Abstract: BF900 62x42b 62X42 KGF2701 S/KGF2701
    Text: P art Ni mber Index K M S C 1 1 4 6 B . 3? K G F 1 145 . . 7 7 K G F 1 146 . M S C 1 1 4 9 . 7 K G F1155B . M S C 2 3 8 3 7 A . . 44 M S M 5 1 4 2 2 3 B . . 37 M S M 5 3 1 6 3 2 C .


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    PDF F1155B F1156 KGF1191 F1254B F1256B 514260B OE306G BF900 62x42b 62X42 KGF2701 S/KGF2701

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V17100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V171CX is OKI's CMOS silicon gate process technology.


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    PDF MSM51V17100_ 216-Word MSM51V17100 216-word MSM51V171CX) 216-w cycles/32m MSM51V17100 2424G

    DU9 308

    Abstract: 32-PIN MSM5117900-70 MSM5117900-80
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117900 152-Word MSM5117900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN DU9 308 32-PIN MSM5117900-70 MSM5117900-80