edo ram 72pin
Abstract: TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns TC5118165BJ hidden refresh TC51181
Text: TOSHIBA THM3210B5BS/BSG-60 THM3210B5BS/BSG-70 1,048,576 WORD X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits dynamic RAM module which assembled 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity such
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THM3210B5BS/BSG-60
THM3210B5BS/BSG-70
THM3210B5BS/BSG
TC5118165BJ
890mW
THMxxxxxx-60)
575mW
THMxxxxxx-70)
edo ram 72pin
TC5117405
TC5118165
TC5118
bsg70
simm EDO 72pin
104ns
hidden refresh
TC51181
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TC5118160
Abstract: TC5118160AJ TC5118160A TC5118 Silicon Gate CMOS
Text: SILICON GATE CMOS INTERGRATED CIRCUIT TC5118160AJ/AZ/AFT/ATR-70,-80 TC5118160AJ/AZ/AFT/ATR-70,-80 TC5118160AJ/AZ/AFT/ATR-70,-80 TC5118160AJ/AZ/AFT/ATR-70,-80 TC5118160AJ/AZ/AFT/ATR-70,-80
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TC5118160AJ/AZ/AFT/ATR-70
TC5118160
TC5118160AJ
TC5118160A
TC5118
Silicon Gate CMOS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3610B0AS/ASG is a 1,048,576 words by 36 bits dynamic RAM module which assembled 2 pcs of TC5118180AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 18 bits dynamic RAM module, by means
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THM3610B0AS/ASG-60/70
THM3610B0AS/ASG
TC5118180AJ
THM361OBOAS/ASG-60/70
THM3610B0AS/ASG
DM04030494
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tc5118180
Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Text: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit
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TC511818
QAJ/AFT-70/80
TC5118180AJ/FT
TC5118180AJ/AFT
TC5118180AJ/AFT-70/80
tc5118180
TC5118180AJ
TC5118180A
A495
A509
TC5118
TOSHIBA TSOP50-P-400
toshiba A500
A498
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TC5118160CJ
Abstract: tc5118160 TC5118160c
Text: TOSHIBA TC5118160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5118160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118160CJ/CFT utilizes TOSHIBA’SCMOS silicon gate process technology as well as advanced
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TC5118160CJ/CFT-50
576-WORD
16-BIT
TC5118160CJ/CFT
42-pin
50-pin
TC5118160CJ
tc5118160
TC5118160c
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TC5118160AJ
Abstract: No abstract text available
Text: TOSHIBA THM3220CQAS/ASG -70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3220C0A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 4 TC5118160AJ device on the printed circuit board. This module can be as well used as 4,194,304 word by 16 bit
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THM3220CQAS/ASG
THM3220C0A
TC5118160AJ
562mW
DQ0-31)
Q025A7A
THM3220C0AS/ASG
TIIM322OC0AS/ASG
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Untitled
Abstract: No abstract text available
Text: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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m--------------24Ã
TC5118180BJ/BFT-60/70
5118180BJ/B
5118180BJ/BFT
QDBBH12
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THM3620C0A
Abstract: No abstract text available
Text: TOSHIBA THM3620C0AS/ASG -70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3620C0A is a 2,097,152 words by 36 bit dynamic RAM module which is assembled with 4 TC5118180AJ devices on the printed circuit board. This module can be as well used as 4,193,304 word by 18
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THM3620C0AS/ASG
THM3620C0A
TC5118180AJ
M17240
THM3620C0AS/ASG
1111n
1111H1111111ii
1111111r
3620C0AS/
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tc5118165bj
Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
Text: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5118165BJ/BFT60/70
TC5118165BJ/BFT
TC5118165BJ/
DR16160695
TC5118165B
J/BFT-60/70
B-119
tc5118165bj
TC5118165
ct rac 70
TC5118165BFT
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TC5118160B
Abstract: No abstract text available
Text: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT
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TC5118160BJ/BFT-60/70
5118160BJ/BFT
18160BJ/BFT
0D2fi367
TC5118160B
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Untitled
Abstract: No abstract text available
Text: ^017240 TOSHIBA OOEÔMbM 354 THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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THM3210B5BS/BSG-60/70
THM3210B5BS/BSG
TC5118165BJ
890mW
THM3210B5BS/BSG-60)
575mW
THM3210B5BS/BSG-70)
S690Z0M
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TC5118160AJ
Abstract: No abstract text available
Text: TOSHIBA TC5118160AJ/AFT-70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5118160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5118160AJ/AFT-70/80
TC5118160AJ/AFT
002S750
G055751
TC5118160AJ
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tc5118160
Abstract: No abstract text available
Text: INTEGRATED . TO S H IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118160AJ / AFT - 60 TC5118160AJ / AFT - 70 SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 words by 16 bits.
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TC5118160AJ
TC5118160AJ/AFT
TC5118160AJ/AFr
5H8160
5U8160A
J/AFT-32
tc5118160
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TC5118180AJ
Abstract: ASG A3 KAS 34 tc5118180
Text: TOSHIBA THM3620C0AS/ASG -70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3620C0A is a 2,097,152 words by 36 bit dynamic RAM module which is assembled with 4 TC5118180AJ devices on the printed circuit board. This module can be as well used as 4,193,304 word by 18
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THM3620C0AS/ASG
THM3620C0A
TC5118180AJ
672mW
THMxxxxxx-70)
452mW
DQO-35)
THM3620C
ASG A3
KAS 34
tc5118180
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tc5118180bj
Abstract: tc5118180 equivalent of BFT 51 8180b TC5118180B
Text: TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The T C 51 18180BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. The TC 5118180BJ/BFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5118180BJ/BFT-60/70
18180BJ/BFT
5118180BJ/BFT
B-155
tc5118180bj
tc5118180
equivalent of BFT 51
8180b
TC5118180B
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toshiba dram
Abstract: TC5118165 TC5118165B tc5118165bj
Text: TOSHIBA DRAM Module AC Conditions No. 30 TC5118165BJ/BFX TC51V18165BJ/BFT Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14 Access Time from CAS -
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TC5118165BJ/BFX
TC51V18165BJ/BFT
THMxxxxxx-60
THMxxxxxx-70
toshiba dram
TC5118165
TC5118165B
tc5118165bj
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THM3220C0AS
Abstract: KAS 34
Text: TOSHIBA THM3220C0AS/ASG -70/80 2,097,152 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3220C0A is a 2,097,152 word by 32 bit dynamic RAM module which is assembled with 4 TC5118160AJ device on the printed circuit board. This module can be as well used as 4,194,304 word by 16 bit
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THM3220C0AS/ASG
THM3220C0A
TC5118160AJ
xxxxxx-70)
89MAX.
TIIM3220C0AS/ASG
THM3220C0AS
KAS 34
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Untitled
Abstract: No abstract text available
Text: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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00Bfl47b
THM3220C5BS/BSG-60/70
THM3220C5BS/BSG
TC5118165BJ
89MAX.
THM3220C5BS/BSG
17EHfl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC 5 118 18 Q AJ/AFT-70 /8 0 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180A J/FT is the new generation dynam ic RAM organized 1,048,576 w ord by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit
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AJ/AFT-70
TC5118180A
TC5118180AJ/AFT
TCH724fl
TC5118180AJ/AFT-70/80
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TC5118165
Abstract: TC5118 TC51181 toshiba 1943
Text: TOSHIBA THM3210B5CS/CSG-50,-60 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 1,048,576-WORD BY 32-BIT DYNAMIC RAM MODULE DESCRIPTION The THM3210B5CS/CSG is a 1,048,576-word by 32-bit dynamic RAM module consisting of two TC5118165CJ DRAMs on a printed circuit board. The module can also be used as a 2,097,152-word by
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THM3210B5CS/CSG-50
576-WORD
32-BIT
THM3210B5CS/CSG
TC5118165CJ
152-word
16-bit
TC5118165
TC5118
TC51181
toshiba 1943
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TC5118160
Abstract: TC5118160B
Text: TOSHIBA TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 5118160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5118160BJ/BFT-60/70
5118160BJ/BFT
18160BJ/BFT
B-127
TC5118160
TC5118160B
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ka52
Abstract: TC5118180A ke52
Text: r O S H IB A THM3610BQAS/ASG -70/80 1,048,576 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3610B0AS/ASG is a 1,048,576 word by 36 bit dynamic RAM module which is assembled with 2 TC5118180AJ devices on the printed circuit board. This module can be as well used as 2,097,152 word by 16
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THM3610BQAS/ASG
THM3610B0AS/ASG
TC5118180AJ
650mW
THMxxxxxx-70)
430mW
DQ0-35)
3610B0AS/ASG
THM3610B0AV
ka52
TC5118180A
ke52
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TC5118160
Abstract: TC51181
Text: TOSHIBA THM3210BQAS/ASG-70 PRELIMINARY 1,048,576 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM3210B0AS/ASG is a 1,048,576 words by 32 bits dynamic RAM module which assembled 2 pcs of TC5118160AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 16 bits dynamic RAM module, by
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THM3210BQAS/ASG-70
THM3210B0AS/ASG
TC5118160AJ
Sing10
DM04010494
THM3210B0AS/ASG
THM3210B0AS/ASG-70
08MAX
TC5118160
TC51181
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TC5118165CJ
Abstract: TC5118165 CFT50
Text: TOSHIBA TC5118165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5118165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5118165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as
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TC5118165CJ/CFT-50
576-WORD
16-BIT
TC5118165CJ/CFT
42-pin
50-pin
TC5118165CJ/CFT-60
TC5118165CJ
TC5118165
CFT50
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