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    51V17400 Price and Stock

    ROHM Semiconductor MSM51V17400F-60TDKX

    IC DRAM 16MBIT PARALLEL 26TSOP
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    DigiKey MSM51V17400F-60TDKX Tray
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    Toshiba America Electronic Components TC51V17400CST

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    Bristol Electronics TC51V17400CST 68
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    LAPIS Semiconductor Co Ltd MSM51V17400F-60TDKNL

    RoHS(Ship within 1day) - D/C 2014
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    CoreStaff Co Ltd MSM51V17400F-60TDKNL 160
    • 1 $7.174
    • 10 $5.882
    • 100 $4.984
    • 1000 $4.81
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    51V17400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7400A

    Abstract: MSM51V17400A
    Text: O K I Semiconductor M SM 51V17400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V17400A is


    OCR Scan     		PDF MSM51 7400A_ 304-Word MSM51V17400A M5M51V17400A 26/24-pin 7400A

    A109D

    Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
    Text: 51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The 51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400B 51V17400B 0260X68040) 157BSC 1AD48-00-MAY95 HY51V17400BJ HY51V17400BSD A109D max3843 lcd hyundai WWD 3P hyundai hy 555

    Untitled

    Abstract: No abstract text available
    Text: 51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The 51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400B 51V17400B HY51V17400Bto 1AD48-00-MAY95 HY51V17400BJ HY51V17400BSU HY51V17400BT HY51V17400SLT

    MSM51V17400A

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 51V17400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The 51V17400A is


    OCR Scan     		PDF MSM51V17400A 304-Word MSM51V17400A 26/24-pin cycles/32

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100

    Untitled

    Abstract: No abstract text available
    Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )


    OCR Scan     		PDF 51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A

    e33a

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17190 576-Word 18-Bit MSM51V17190 2048cycles/32m e33a

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117190 576-Word 18-Bit MSM5117190 cycles/32ms Bv 42 transistor tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V17400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17400 304-Word MSM51V17400 2048cycles/32ms A0-A10

    MSM51V17400DSL

    Abstract: A312H
    Text: E2G0123-17-61 O K I Semiconductor M 51V17400D/DSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI7400D /D SL is a 4,194,304-w ord x 4-bit dynam ic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V17400D/DSL achieves high integration, high-speed operation,


    OCR Scan     		PDF E2G0123-17-61 MSM51V17400D/DSL 304-Word MSM51VI7400D MSM51V17400D/DSL a26/24-pin 26/24-pin MSM51V17400DSL MSM51V17400DSL A312H

    MSM51V17400

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 V17 4 0 0 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the M SM 51VI7400 is OKI's CM OS silicon gate process technology.


    OCR Scan     		PDF MSM51V17400 304-Word MSM51V17400 MSM51VI7400 2048cycles/32ms b72M24D A0-A10

    M51V17400-60

    Abstract: M51V17400 M51V17 MSM51V17400 be4s A10E M51V m51v174 HAT141
    Text: O K I Semiconductor MSM5 1 V17400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V17400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17400 304-Word MSM51V17400 cycles/32ms A0-A10 L724240 M51V17400-60 M51V17400 M51V17 be4s A10E M51V m51v174 HAT141

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


    OCR Scan     		PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    uras 4

    Abstract: uras 2 5116100
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117190 576-Word 18-Bit MSM5117190 cycles/32m uras 4 uras 2 5116100

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V17400 4,194,304-Word x 4-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The 51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the 51V17400 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17400 304-Word MSM51V17400 cycles/32ms b724240 G017425

    Bv 42 transistor

    Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
    Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17190_ 576-Word 18-Bit MSM51V17190 cycles/32ms Bv 42 transistor CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100

    DU9 308

    Abstract: 32-PIN MSM5117900-70 MSM5117900-80
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117900 152-Word MSM5117900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN DU9 308 32-PIN MSM5117900-70 MSM5117900-80

    51V17400

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V17400 4 Meg x 4-Blt DYNAMIC RAM DESCRIPTION The MSM51V7400 is a 16 Megabit dynamic memory organized as 4,194,304 word by 4 bit. The technology used to fabricate the MSM51V7400 is OKI's CMOS silicon gate process technology. The device operates at a single +3.3V power supply. All inputs and outputs are LVTTL


    OCR Scan     		PDF MSM51V17400 MSM51V7400 16-Meg 1-800-0KI-6388 51V17400