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    TC5116 Price and Stock

    Toshiba America Electronic Components TC5116100CSJ-60

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    Bristol Electronics TC5116100CSJ-60 726 1
    • 1 $7.056
    • 10 $4.5864
    • 100 $3.0574
    • 1000 $2.893
    • 10000 $2.893
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    Quest Components TC5116100CSJ-60 580
    • 1 $9.45
    • 10 $9.45
    • 100 $9.45
    • 1000 $3.78
    • 10000 $3.78
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    Toshiba America Electronic Components TC511664BZ-10

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    Bristol Electronics TC511664BZ-10 590 1
    • 1 $10.5
    • 10 $7.875
    • 100 $6.3
    • 1000 $6.0375
    • 10000 $6.0375
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    Quest Components TC511664BZ-10 472
    • 1 $14
    • 10 $14
    • 100 $14
    • 1000 $8.05
    • 10000 $8.05
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    TC511664BZ-10 80
    • 1 $16.3071
    • 10 $16.3071
    • 100 $12.6833
    • 1000 $12.6833
    • 10000 $12.6833
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    Toshiba America Electronic Components TC511664BJ-80

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    Bristol Electronics TC511664BJ-80 248
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    TC511664BJ-80 43
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    Quest Components TC511664BJ-80 1,820
    • 1 $5.472
    • 10 $5.472
    • 100 $5.472
    • 1000 $2.736
    • 10000 $2.736
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    TC511664BJ-80 798
    • 1 $4.56
    • 10 $4.56
    • 100 $4.56
    • 1000 $2.28
    • 10000 $2.28
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    TC511664BJ-80 17
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    Toshiba America Electronic Components TC511664J-10

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    Bristol Electronics TC511664J-10 233
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    Toshiba America Electronic Components TC5116400CST-60

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    Bristol Electronics TC5116400CST-60 155
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    TC5116 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5116400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5116400BSJ Toshiba 4194304 word x 4 Bit Dynamic Ram Scan PDF
    TC5116400J Toshiba 4194304 word x 4 Bit Dynamic Ram Scan PDF
    TC511664B Toshiba 65536 word x 16 bit DRAM Scan PDF
    TC511664BJ-10 Toshiba 65536 WORD x 16-Bit DYNAMIC RAM Scan PDF
    TC511664BJ-80 Toshiba 65536 WORD x 16-Bit DYNAMIC RAM Scan PDF
    TC511664BZ-10 Toshiba 65,536 WORD x 16 BIT DYNAMIC RAM Scan PDF
    TC511664BZ-80 Toshiba 65,536 WORD x 16 BIT DYNAMIC RAM Scan PDF

    TC5116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tc5118165bj

    Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
    Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide


    Original
    PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 TC5116405BSJ/BST 300mil) cycles/64ms TC51V16325BJ: SOJ70-P-400A tc5118165bj TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400

    TC511632

    Abstract: TC511632FL
    Text: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high


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    PDF TC511632FL/FTL-70/85/10 1632FL7FTL 511632FL7F 1632FLVFTL TC511632 TC511632FL

    TC5116160

    Abstract: A461
    Text: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit


    OCR Scan
    PDF TC5116160AI/AFT-60/70/80 TC5116160AJ/AFT TC51161610AJ/AFT-60/70/80 A8R--A11R TC5U6160AJ/AFT-60/70/80 TC5116160 A461

    TCFT 1103

    Abstract: TC5116400J A173 TC511640J A10RC TCWU
    Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan
    PDF TC5116400J/FT-60/70 TC5116400J/FT TC5116400J/FT. 1M516DRAM. TCFT 1103 TC5116400J A173 TC511640J A10RC TCWU

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA TC5U6400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan
    PDF TC5U6400BSJ/BST-60/70 TC5116400BSJ/BST 300mil) BST60

    TC5116400FT

    Abstract: No abstract text available
    Text: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan
    PDF TC5116400J/FT TC5116400J/FT. 1M516DRAM. TC5116400FT

    SK 3002

    Abstract: No abstract text available
    Text: TOSHIBA TC5116165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5116165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as


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    PDF TC5116165CJ/CFT-50 576-WORD 16-BIT TC5116165CJ/CFT 42-pin 6165CJ/CFT-50 SOJ42-P-400-1 SK 3002

    TC511665

    Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
    Text: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


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    PDF TC511665BJ/BZ TC511665 TC511665BZ TC511665BJ ZIP40 TC5116

    TC5116160

    Abstract: AI05a CFT50
    Text: TOSHIBA TC5116160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5116160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced


    OCR Scan
    PDF TC5116160CJ/CFT-50 576-WORD 16-BIT TC5116160CJ/CFT SOJ42-P-400-1 TC5116160 AI05a CFT50

    Untitled

    Abstract: No abstract text available
    Text: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION The TC511665BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. ^ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


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    PDF TC511665BJ/BZ

    Untitled

    Abstract: No abstract text available
    Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


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    PDF TC5116100BSJ-60/70 5116100BS 51161OOBSJ 300mil)

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA TC5116400BSJ/BST-6Q/70 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both


    OCR Scan
    PDF TC5116400BSJ/BST-6Q/70 TC5116400BSJ/BST 300mil) DR16020794 0027bl3 TC5116400BSJ/BST-60/70 BST60

    Untitled

    Abstract: No abstract text available
    Text: -60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3680A0 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 18 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high


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    PDF ----------------------------THM3680A0S/SG THM3680A0 TC5116400J 555mW THMxxxxxx-60) 059mW THMxxxxxx-70) TCH724fl C-101 THM3680A0S/SG

    A11RC

    Abstract: No abstract text available
    Text: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan
    PDF TC5116160AJ/AFT-60/70/80 TC5116160AJ/AFT 00B5777 0D2577Ã TC51161610AJ/AFT-60/70/80 0Q25771 TC5116160AÃ A11RC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 3640A0 is a 4,194,304 word by 36 bit dynamic RAM m odule which is assem bled with 9 TC5116400J devices on the printed circuit board. This m odule is optim ized for applications which require high


    OCR Scan
    PDF THM3640A0S/SG 3640A0 TC5116400J xxxxxx-60) xxxxxx-70) THM3640A0S/5G THM3640A0S/SG

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan
    PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST 300mil) DR16060295 SOJ26-P-300C) BST60

    TC511664

    Abstract: No abstract text available
    Text: I N T E G R A T E D CIRCUIT TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT T C511664J / Z - 8 0 , TC511664J / Z -10 TECHNICAL DATA SILICON GATE CMOS 65,536 W O R D X 16 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice.


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    PDF C511664J TC511664J TC511664J/Z TC5116G4J/Z 100mA 400mil 40pln 47Smlt TCS11884Z TC511664

    Untitled

    Abstract: No abstract text available
    Text: 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTIO N The TC511664J/Z is th e new generation dynam ic RAM organized 65,536 words by 16 bits. The TC51 1664J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit tech n iq u es to provide wide operating m argins, both in te rn a lly and to the system user. M ultiplexed


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    PDF TC511664J/Z 1664J/Z

    CST A 200

    Abstract: 5116405 TC5116405
    Text: IN T EG R A T ED TOSHIBA T O S H I B A M O S D I G I T A L I N T E G R A T E D CIRCUI T TC5116405 CSJ /CST-40 TC5116405 CSJ / CST - 50 TC5116405 C S J/ C ST -60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 WORD x4 BIT EDO HYPER PAGE DYNAMIC RAM


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    PDF TC5116405 /CST-40 TC5116405CSJ/CST 300mil) CST A 200 5116405

    tc511664jl

    Abstract: TC516
    Text: TC51 6 5 ,5 3 6 W ORD X 16 BIT DYNAMIC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC511664JL/ZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664JL/ZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit


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    PDF TC511664JL/ZL TC511S64JL/ZL tc511664jl TC516

    thm3640

    Abstract: No abstract text available
    Text: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3640A0 is a 4,194,304 word by 36 bit dynamic RAM module which is assembled with 9 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high


    OCR Scan
    PDF THM3640A0S/SG THM3640A0 TC5116400J 130ns 455mW THMxxxxxx-60) 960mW THMxxxxxx-70) DQO-35) thm3640

    csr bc4

    Abstract: TC5116400BSJ BST60
    Text: TOSHIBA m C|C]t:,724fl QD2fl2Ci;L 510 • -TC5116400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan
    PDF 724fl TC5116400BSJ/BSTW70 TC5116400BSJ/BST 300mil) csr bc4 TC5116400BSJ BST60

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


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    PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


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    PDF TC5116405BSJ/BST60 16405BSJ/BST 16405B TC5116405BSJ/BST 300mil) TC5116405BS J/BST-60 DR16060295 BST60