SPT0305
Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
405BJ-50/-60
405BJ/BT
P-TSOPII-26/24-1
GPX05857
SPT0305
Q67100-Q1101
q67100-q1102
WCs MARKING
SMD MARKING code ASC
code marking rah
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D-50
Abstract: MSM5116405
Text: 作成 :1999 年 5 月 電子デバイス M SM 5116405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5116405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ
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5116405D
304-Word
MSM5116405D
SOJ26/24
300mil
SOJ26/24-P-300-1
MSM5116405D-xxSJ)
TSOPII26/24-P-300-1
MSM5116405D-xxTS-K)
D-50
MSM5116405
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5117405
Abstract: No abstract text available
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO 5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature
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HYB5116405BJ/BT
HYB5117405BJ/BT
HYB5116405BJ/BT-50)
HYB5116405BJ/BT-60)
HYB5116
405BJ/BT-50/-60/-70
GPJ05628
P-TSOPII-26/24
300mil)
GPX05857
5117405
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HYB3117405
Abstract: HYB5116405 HYB5117405 HYB3116405
Text: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO 5116405BJ/BT-50/-60 HYB5117405BJ/BT-50/-60 HYB3116405BJ(L)/BT(L)-50/-60 HYB3117405BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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HYB5116405BJ/BT-50/-60
HYB5117405BJ/BT-50/-60
HYB3116405BJ
HYB3117405BJ
HYB5116405
HYB3116405
HYB5117415
HYB5116
405BJ-50/-60
HYB3116
HYB3117405
HYB5116405
HYB5117405
HYB3116405
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hm5x1
Abstract: No abstract text available
Text: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633
26-pin
ns/60
ns/70
hm5x1
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC
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5116405BJ
5117405BJ
5116405BJ-50)
5116405BJ-60)
5116405BJ-70)
5117405BJ-50)
5117405BJ-60)
5117405BJ-70)
405BJ-50/-60/-70
85max
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Untitled
Abstract: No abstract text available
Text: 51164051 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-757A Z Rev. 1.0 Mar. 17, 1997 Description The Hitachi H M 51164051 Series is CMOS dynamic RAM organized 4,194,304-word X 4-bit. It employs the most advanced CMOS technology for high performance and low power. The H M 51164051 Series
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HM51164051
304-word
ADE-203-757A
26-pin
ns/70
mW/385
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MSM5116405
Abstract: MSM5116405A
Text: O K I Semiconductor M SM 5116405A _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 5116405A achieves high integration, high-speed operation, and low-power
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MSM5116405A
304-Word
MSM5116405A
26/24-pin
cycles/64
MSM5116405
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5117405BJ-50
Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
405BJ/BT
405BJ-50/-60
GPX05857
5117405BJ-50
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C
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5116405BJ
5117405BJ
5116405BJ-50)
5116405BJ-60)
5116405BJ-70)
fi23Sb05
405BJ-50/-60/-70
P-SOJ-26/24
BI24X
A535b05
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
-5J-26/24-1
300mil)
405BJ-50/-60
405BJ/BT
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Nippon capacitors
Abstract: No abstract text available
Text: HB56U472E Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-715A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56U472E is a 4M
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HB56U472E
304-word
72-bit
ADE-203-715A
16-Mbit
16-bit
74ABT16244)
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi 5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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OCR Scan
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HM5116405
HM5117405
304-word
ADE-203-633
26-pin
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5117405
Abstract: No abstract text available
Text: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi 5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633A
26-pin
ns/70
5117405
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Untitled
Abstract: No abstract text available
Text: H B 56S872E S N -6B /7B /8B 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-611 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S872ESN belongs to 8 Byte DIMM (Dual In-line Memory M odule) fam ily, and has been
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56S872E
608-word
72-bit
168-pin
ADE-203-611
HB56S872ESN
B56S872ESN
24C02)
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Untitled
Abstract: No abstract text available
Text: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi 5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633
304-word
26-pin
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51w4260
Abstract: 51W4265C HM 338 262144-WORD
Text: Contents • L in e U p o f H ita c h i IC M e m o rie s . 7 • P a c k a g e In f o rm a tio n s .
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HM5283206
131072-word
32-bit
HM530281R
331776-word
HM538253B/
262144-word
HM538254B
HM538123B
51w4260
51W4265C
HM 338
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Untitled
Abstract: No abstract text available
Text: HB56U472E-6B/7B/8B 4,194,304-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline buffered 8 BYTE DIMM HITACHI ADE-203-554A Z Rev. 1.0 Jun. 11, 1996 Description The HB56U472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as
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HB56U472E-6B/7B/8B
304-word
72-bit
168-pin
ADE-203-554A
HB56U472E
16-Mbit
HM5116405BTS)
16-bit
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
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P-SOJ-26/20-5
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Untitled
Abstract: No abstract text available
Text: HB56S864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The H B56S864ES belongs to 8 B yte DIM M (Dual In-line Memory M odule) fam ily, and has been developed as an optimized main memory solution for 4 and 8 B yte processor applications.
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HB56S864ES-6/7
608-word
64-bit
ADE-203-780A
B56S864ES
16-Mbit
16-bit
T16244)
20-bit
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
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P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
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