TC511665
Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Text: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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TC511665BJ/BZ
TC511665
TC511665BZ
TC511665BJ
ZIP40
TC5116
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Untitled
Abstract: No abstract text available
Text: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION The TC511665BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. ^ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit
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TC511665BJ/BZ
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tc511665
Abstract: TC511665BZ toshiba TC511665BJL
Text: TENTATIVE DATA 65,536 WORD x 16 BIT DYNAMIC RAM DESCRIPTION The TC511665BJL/BZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511665BJL/BZL utilizes TOSHIBA’S CMOS Silicon gate process technology a s well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.
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TC511665BJL/BZL
tc511665
TC511665BZ
toshiba TC511665BJL
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Untitled
Abstract: No abstract text available
Text: T EN TA TIVE D A T A 65,536 W O R D x 16 BIT D Y N A M IC R A M DESCRIPTIO N The TC511665BJL/BZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511665BJL/BZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC511665BJL/BZL
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