SDT7A05
Abstract: No abstract text available
Text: SDT7A05 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a
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SDT7A05
O213AA)
1-Aug-02
SDT7A05
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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40G120
Abstract: BU124 2SD745 BD141
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 SML7611 SDT7806 SDT7806 2N1811 2N2111 SDT7206 SDT7206 SDT7910 SDT791 0 SDT791 0 BU124 BU124 BU124 BU124A BU124A DTL8753 2N6262 BUX17 BUX17 WXlT 55 60 65 70 75 80 85 90 SDT7736 SDT7736
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O-218
O-218var
O-247S
O-218M
O-218AA
40G120
BU124
2SD745
BD141
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2SA1106 SANKEN
Abstract: TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE fT ON) Min (Hz) ICBO *ON r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . -10 -15 20 . .
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BDX22
TIP33E
TIP34E
2SC409
2SC410
2SA1106
2SA747A
2SC2837
2SA1007A
2SC2337A
2SA1106 SANKEN
TO247s
BD141 PNP
2sc1116A sanken
2SA1186 SANKEN
BU124 texas
SDT7605
2sA747A sanken
BU124
2SB705
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SDT13305
Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251
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2N2811
2N2812
2N2813
2N2814
2N4070
2N4071
2N4301
2N5006
2N5008
2N5218
SDT13305
SDT12302
SDT13303
SDT7603
SDT7732
2N2811
2N2812
2N2813
2N2814
2N4070
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300pF
Abstract: NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05
Text: ^olîtran Devices. Inc Ä ¥ M ,© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER dfl CONTACT METALLIZATION Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm)
300pF
NPN triple diffused 60V
2N4070
2N4071
JAN2N4150
JAN2N5237
JAN2N5238
SDT7601
SDT7618
SDT7A05
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2N2387
2N2988
2N2S89
2N2990
2N2991
2N2992
2N2993
2N2994
2N3439
2N3440
2NS604
2NS540
2NS154
SD716
SDT13305
2N5671
2N5005
SDT425
SDT7605
SDT96302
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2N5286
Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT
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2N2657
2N2658
2N2877
O-111
2N2878
2N2879
2N2880
2N5286
2N5290
SOLITRON
2N5740
SDT13305
SDT3775
SDT85502
2N439S
2N5610
2N6562
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SDT423
Abstract: SDT411 SDT425
Text: 33 SILICON POWER TRANSISTORS CURRIE MT G A IN TYPE NUM BER CASE TYPE V CBO V V EBO V CEO I V I V h M IN . I MAX. V CE V S A T U R A T IO VI V O LT A G E S <s> C I A V CE(s V BE(s) V I V 'c A 1 *B A 10 AMP SILICON NPN 2N5313 2N5315 2N5317 TO-61 TO-61 TO-61-I
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Untitled
Abstract: No abstract text available
Text: ra !» ? mm©©_ -Jfotttron MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED _PLANAR POWER TRANSISTOR * * FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION B ase a n d em itter: > 30,000 A Aluminum
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203mm)
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES IP M M ? ^ 561 863 5946 11/21/02 18:18 0 :06/08 N0:092 © Ä T T Ä I L ® _ _ J S u t ìs n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST 8WITCHING NPIM EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * FORMERLY 85
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Untitled
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC ~TS 95D 02 86 3 D 3 3 - t / - DE|fl3bôb02 OOOEflk.3 E | Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum
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203mm)
33-/l
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