BD607
Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)
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BD607
BD608
BDS10
BDS13
2SD369
2SD3690
2N5621
2N5622
2SD369Y
BDY17
sd1536-1
mj2940 motorola
RCA1C07
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300pF
Abstract: NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05
Text: ^olîtran Devices. Inc Ä ¥ M ,© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER dfl CONTACT METALLIZATION Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm)
300pF
NPN triple diffused 60V
2N4070
2N4071
JAN2N4150
JAN2N5237
JAN2N5238
SDT7601
SDT7618
SDT7A05
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SDT7601
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum
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fl3hfib02
203mm)
40MHz
40MHz
300pF
SDT7601
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES IP M M ? ^ 561 863 5946 11/21/02 18:18 0 :06/08 N0:092 © Ä T T Ä I L ® _ _ J S u t ìs n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST 8WITCHING NPIM EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * FORMERLY 85
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Untitled
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC ~TS 95D 02 86 3 D 3 3 - t / - DE|fl3bôb02 OOOEflk.3 E | Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum
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203mm)
33-/l
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