SDT13305
Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251
|
Original
|
2N2811
2N2812
2N2813
2N2814
2N4070
2N4071
2N4301
2N5006
2N5008
2N5218
SDT13305
SDT12302
SDT13303
SDT7603
SDT7732
2N2811
2N2812
2N2813
2N2814
2N4070
|
PDF
|
SDT7201
Abstract: SDT7603 SDT7207 SDT7612
Text: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500
|
OCR Scan
|
|
PDF
|
300pF
Abstract: NPN triple diffused 60V 2N4070 2N4071 JAN2N4150 JAN2N5237 JAN2N5238 SDT7601 SDT7618 SDT7A05
Text: ^olîtran Devices. Inc Ä ¥ M ,© MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER dfl CONTACT METALLIZATION Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
|
OCR Scan
|
203mm)
300pF
NPN triple diffused 60V
2N4070
2N4071
JAN2N4150
JAN2N5237
JAN2N5238
SDT7601
SDT7618
SDT7A05
|
PDF
|
2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
|
OCR Scan
|
2N2387
2N2988
2N2S89
2N2990
2N2991
2N2992
2N2993
2N2994
2N3439
2N3440
2NS604
2NS540
2NS154
SD716
SDT13305
2N5671
2N5005
SDT425
SDT7605
SDT96302
|
PDF
|
2N5286
Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT
|
OCR Scan
|
2N2657
2N2658
2N2877
O-111
2N2878
2N2879
2N2880
2N5286
2N5290
SOLITRON
2N5740
SDT13305
SDT3775
SDT85502
2N439S
2N5610
2N6562
|
PDF
|
SDT5504
Abstract: SDT5503 T 8922 SDT5505 PG5020 SDT5002 SDT5510 PG5002 T5511 SDT5003
Text: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33' ~ ù INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS Competitive . Type No. Pirgo Replacement Type No. Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo
|
OCR Scan
|
SDT4451
SDT4452
SDT4453
SDT4454
SDT4455
SDT4456
SDT4483
SDT5001
SDT5002
SDT5003
SDT5504
SDT5503
T 8922
SDT5505
PG5020
SDT5510
PG5002
T5511
|
PDF
|
SDT7601
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum
|
OCR Scan
|
fl3hfib02
203mm)
40MHz
40MHz
300pF
SDT7601
|
PDF
|
SDT7201
Abstract: 2N5740 SDT3109 2n5290 2N5737 SDT7612
Text: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ra !» ? mm©©_ -Jfotttron MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED _PLANAR POWER TRANSISTOR * * FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION B ase a n d em itter: > 30,000 A Aluminum
|
OCR Scan
|
203mm)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES IP M M ? ^ 561 863 5946 11/21/02 18:18 0 :06/08 N0:092 © Ä T T Ä I L ® _ _ J S u t ìs n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST 8WITCHING NPIM EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * FORMERLY 85
|
OCR Scan
|
|
PDF
|
SDT9011
Abstract: No abstract text available
Text: t ' i r A P I i ELECTRONICS INC ^3 DE I ODMHSTS DOOOOai 0 " f « a 7^-33'~ù/L INTERCHANGEABILITY CHART SILICON POWER TRANSISTORS ' Competitive . Type No. “ * Í ! Competitive Type No. Pirgo Replacement Type No. H 1 Competitive Type No. Pirgo Replacement
|
OCR Scan
|
PG5097
SDT4451
PG5049
T7608
PG5002
PG5050
PG5098
SDT4453
PG5003
PG5051
SDT9011
|
PDF
|
2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
|
OCR Scan
|
AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC ~TS 95D 02 86 3 D 3 3 - t / - DE|fl3bôb02 OOOEflk.3 E | Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum
|
OCR Scan
|
203mm)
33-/l
|
PDF
|