Contextual Info: HGTG30N120CN / HGTG5A30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN and HGT5A30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

Contextual Info: V i sh ay Intertechnolo g y, Inc . I INNOVAT AND TEC O L OGY LTO 30, LTO 50, LTO 100 N HN POWER THICK FILM RESISTORS O 19 62-2012 Resistors - 30 W, 50 W, and 100 W at 25 °C 30 W, 50 W, and 100 W Thick Film Power Resistors Key Benefits • • • • •

Contextual Info: SB4020ST SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 60 Volts CURRENT 40 Amperes 0.615 15.60 MAX. FEATURES 0.520(13.20) 0.504(12.80) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. 0.185(4.70) 0.169(4.30) 0.402(10.20)

Contextual Info: SB3020ST SERIES SCHOTTKY BARRIER RECTIFIERS 20 to 60 Volts CURRENT VOLTAGE 30 Amperes 0.615 15.60 MAX. FEATURES 0.520(13.20) 0.504(12.80) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. 0.185(4.70) 0.169(4.30) 0.402(10.20)

MJE1100

Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70

SKC10C75

Abstract: SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type >c Max V BR CEO (A) Of) PD Max hFE fT ON) Min (Hz) ICBO t0N r (CE)sat Toper Max Max (A) (8) Max (Ohms) Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40 45

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

HGTG27N120BN

Abstract: 27N120 27N120BN HGT5A27N120BN RHRP30120 TA49280 LD26 MJ2002 G27N120BN
Contextual Info: HGTG27N120BN / HGT5A27N120BN Data Sheet August 2002 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

car steering left and right motor control circuit

Abstract: IXAN0019 MOSFET Module 24v FDM100-0045SP ISOPLUS247
Contextual Info: AUTOMOTIVE APPLICATIONS FEATURE IXAN0019 High Power TrenchMOSFET Solutions in Automotive Designs In the automobile, more and more mechanical and hydraulic drives will be replaced by electrically driven solutions. In the following article, power semiconductors in TrenchMOSFET technology will be presented giving

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

b0333

Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J

IDC2555

Abstract: TIPL763A BU526 2N630B 250n
Contextual Info: POWER SILICON NPN Item Number Part Number V I C) 5 10 15 20 25 30 55 60 65 70 75 BO B5 90 95 Max (Hz) leBO Max (A t, Max Tope, Max (I) eC) Package Style >= 5 A, (Cont'd) B.O B.O B.O B.O B.O B.O B.O B.O B.O B.O 350 350 350 350 350 350 350 350 350 350 4.0 4.0

to1502

Abstract: IL102 MG650 2as201 LMP9100 mp9000 MG815 RESISTOR MG660 MG680 MP9100
Contextual Info: Page 2 of 2 MP900 and MP9000 Series Kool-Pak ® ® MP900 and MP9000 Series Kool-Pak Type MG Precision High Voltage Resistors MP900 and MP9000 Series Kool-Pak Type MG Precision High Voltage Resistors Power Film Resistors TO-126, TO-220 and TO-247 Style Type

what is TG in PCB material

Abstract: ims pcb irf3205 mosfet transistor FET IRF3205 2804S IRF3205 IR IRFS3006PBF AN949 AN-1140 IPC-2221
Contextual Info: Application Note AN-1140 Continuous dc Current Ratings of International Rectifier’s Large Semiconductor Packages By K. Teasdale Principal Engineer International Rectifier Corporation 1 May 2009 Table of contents Page Section 1: Classic Current Rating for Power Semiconductor .2

BD149

Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25

igbt inverter welder schematic

Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field

BUX79

Abstract: SML424 40322 GE 2sc3233 2SC1504 DTS801 STS401 SML425 BU226 DTS-801
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE on PD Max hFE fT ON) Min (Hz) ICBO t()N r Max Max (A) (s) Max (Ohms) (CE)sat T Oper Package Style Max (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22

qe R 521 smd

Contextual Info: P re lim in a ry data <> IXGH20N60B IXGH20N60BS HiPerFAST IGBT Symbol Test Conditions V CES Tj = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 vC0R vGES •« Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms U ■c. SSOA RBSOA p c 600 600 VGE= 15 V, TVJ = 125°C, RG= 22 O

40N60A4D

Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26
Contextual Info: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input

smps 500W

Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
Contextual Info: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT

2SB1825

Abstract: LM3661TL-1.40 2SC2166 044C8 b0587 30u60 MJE2481 MJE2483 MJ481
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 -15 20 - 25 30 35 40 45 50 55 -60 -65 70 80 85 - 90 95 Ie Max (A) Y(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (8) (8) PD Max (W) TOper Max (Oe) Package Style >= 2.5 A, (Cont'd) BOY78 BOY71

IXGH32N60C

Contextual Info: □ IXYS HiPerFAST IGBT Lightspeed™ Series IXGH32N60C IXGH32N60CS VCES IC25 V CE sat typ tfity p 600 V 60 A 2.1 V 55 ns Prelim inary Data Sheet Symbol TestConditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

r609

Contextual Info: MBR6040ST SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 100 Volts CURRENT 60 Amperes 0.615 15.60 MAX. FEATURES 0.520(13.20) 0.504(12.80) • Plastic package has Underwriters Laboratory 0.185(4.70) 0.169(4.30) 0.402(10.20) 0.385(9.80) Flammability Classification 94V-O.