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    RQA0004 Search Results

    RQA0004 Result Highlights (1)

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    RQA0004PXDQS#H1 Renesas Electronics Corporation N-Channel MOSFET Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RQA0004PXDQS-H1

    MOSFET N-CH 16V 300MA UPAK
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    Renesas Electronics Corporation RQA0004PXTL-E

    (Alt: RQA0004PXTL-E)
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    Avnet Silica RQA0004PXTL-E 28 Weeks 1
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    RQA0004 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RQA0004LXAQS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0004LXTL-E Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0004PXDQS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0004PXDQS#H1 Renesas Electronics MOSFET N-CH 16V 300MA UPAK Original PDF
    RQA0004PXTL-E Renesas Technology Silicon N-Channel MOS FET Original PDF

    RQA0004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RQA0004PXTL-E

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E

    RQA0004PXTL-E

    Abstract: 155-8-1 905-170 diode MARKING CODE 917 RQA0004PXDQS ZO 103 MA 75 623 zo 107 SC-62 1012
    Text: RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006 Features • High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS REJ03G1489-0100 PLZZ0004CA-A RQA0004PXTL-E 155-8-1 905-170 diode MARKING CODE 917 RQA0004PXDQS ZO 103 MA 75 623 zo 107 SC-62 1012

    RQA0004PXTL-E

    Abstract: RQA0004PXDQS
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E RQA0004PXDQS

    RQA0004PXDQS

    Abstract: RQA0004PXTL-E RQA0004 k 1487 db30a
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Sep 09, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0300 PLZZ0004CA-A RQA0004PXDQS RQA0004PXTL-E RQA0004 k 1487 db30a

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 Previous: REJ03G1567-0100 Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)  Compact package capable of surface mounting


    Original     		PDF RQA0004LXAQS R07DS0496EJ0200 REJ03G1567-0100) PLZZ0004CA-A

    RQA0004LXAQS

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz  Compact package capable of surface mounting


    Original     		PDF RQA0004LXAQS R07DS0496EJ0400 PLZZ0004CA-A RQA0004LXAQS

    k 1487

    Abstract: RQA0004 RQA0004PXTL-E RQA0004PX R07DS0418EJ0201
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0201 Rev.2.01 Jun 27, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0201 PLZZ0004CA-A k 1487 RQA0004 RQA0004PXTL-E RQA0004PX

    RQA0004LXTL-E

    Abstract: 155-8-1 905-170 RQA0004LXAQS
    Text: RQA0004LXAQS Silicon N-Channel MOS FET REJ03G1567-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004LXAQS REJ03G1567-0100 PLZZ0004CA-A RQA0004LXTL-E 155-8-1 905-170 RQA0004LXAQS

    RQA0011

    Abstract: RQA0011DNS Ga FET marking k
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0600 Rev.6.00 Mar 19, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		PDF RQA0011DNS WSON0504-2: R07DS0095EJ0600 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS Ga FET marking k

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    RQA0011

    Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


    Original     		PDF RQA0011DNS WSON0504-2: R07DS0095EJ0800 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS RQA0004 PG890 RQA0011DNSTB-E

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    RQA0004LXAQS

    Abstract: RQA0004LXTL-E ka 494
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RQA0004PXDQS

    Abstract: RQA0004PXTL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF